公开(公告)号：US09373765B2

公开(公告)日：2016-06-21

申请号：US14122134

申请日：2012-04-26

申请人： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

发明人： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

IPC分类号： H01L29/49 ,  H01L33/60 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/20

CPC分类号： H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

摘要翻译： 光电半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和镜层，TCO层布置在半导体主体的n侧和镜面层之间。