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公开(公告)号：US09373765B2
公开(公告)日：2016-06-21
申请号：US14122134
申请日：2012-04-26
申请人： Markus Maute , Karl Engl , Sebastian Taeger , Robert Walter , Johannes Stocker
发明人： Markus Maute , Karl Engl , Sebastian Taeger , Robert Walter , Johannes Stocker
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
摘要翻译： 光电半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和镜层，TCO层布置在半导体主体的n侧和镜面层之间。
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公开(公告)号：US20140319566A1
公开(公告)日：2014-10-30
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译： 发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个 背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。
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公开(公告)号：US09577165B2
公开(公告)日：2017-02-21
申请号：US14240443
申请日：2012-08-23
申请人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
发明人： Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
CPC分类号： H01L33/60 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.
摘要翻译： 发光二极管芯片包括具有产生电磁辐射的有源层的半导体层序列，其中发光二极管芯片在前侧具有辐射出射区域，发光二极管芯片至少在一个 背面位于辐射出口区域的对面，所述镜面层含有银，保护层设置在镜面层上，保护层包括透明导电氧化物。
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公开(公告)号：US08872209B2
公开(公告)日：2014-10-28
申请号：US13581417
申请日：2011-02-15
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
摘要翻译： 发光二极管芯片包括半导体层序列，所述半导体层序列具有产生电磁辐射的有源层，其中所述发光二极管芯片在前侧具有辐射出射区域。 在与辐射出口区域相对的后侧，发光二极管芯片至少在区域中具有含有银的镜面层。 降低镜面层的腐蚀和/或改善粘合性的功能层被布置在镜面层上，其中形成功能层的材料也分布在整个镜面层中。 功能层的材料在镜面层中具有浓度梯度，其中镜面层中的功能层的材料的浓度从功能层朝向半导体层序列的方向减小。
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5.发明授权公开(公告)号：US09343637B2
公开(公告)日：2016-05-17
申请号：US13981879
申请日：2012-02-07
CPC分类号： H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
摘要： An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
摘要翻译： 光电子半导体芯片具有半导体本体和设置半导体本体的基板。 半导体本体具有设置在第一导体类型的第一半导体层和第二导体类型的第二半导体层之间的有源区。 第一半导体层设置在面向衬底的有源区的一侧。 第一半导体层导电地连接到设置在衬底和半导体本体之间的第一端接层。 封装层设置在第一端接层和衬底之间，并且在半导体芯片的平面图中至少在限定半导体本体的侧面上的一些区域中突出。
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6.发明授权公开(公告)号：US09105823B2
公开(公告)日：2015-08-11
申请号：US13983972
申请日：2012-01-18
申请人： Karl Engl , Johann Eibl , Tamas Lamfalusi , Markus Maute
发明人： Karl Engl , Johann Eibl , Tamas Lamfalusi , Markus Maute
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has an epitaxial layer sequence. A doped epitaxial layer of the epitaxial layer sequence has a first region and a second region and a protected structure. The first region of the doped epitaxial layer completely covers the protected structure. The outer surface of the doped epitaxial layer has a first roughness in the first region and a second roughness in the second region.
摘要翻译： 光电半导体芯片具有外延层序列。 外延层序列的掺杂外延层具有第一区域和第二区域以及受保护结构。 掺杂外延层的第一区域完全覆盖受保护的结构。 掺杂外延层的外表面在第一区域具有第一粗糙度，在第二区域具有第二粗糙度。
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7.发明申请公开(公告)号：US20140027805A1
公开(公告)日：2014-01-30
申请号：US13983972
申请日：2012-01-18
申请人： Karl Engl , Johann Eibl , Tamas Lamfalusi , Markus Maute
发明人： Karl Engl , Johann Eibl , Tamas Lamfalusi , Markus Maute
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has an epitaxial layer sequence. A doped epitaxial layer of the epitaxial layer sequence has a first region and a second region and a protected structure. The first region of the doped epitaxial layer completely covers the protected structure. The outer surface of the doped epitaxial layer has a first roughness in the first region and a second roughness in the second region.
摘要翻译： 光电半导体芯片具有外延层序列。 外延层序列的掺杂外延层具有第一区域和第二区域以及受保护结构。 掺杂外延层的第一区域完全覆盖受保护的结构。 掺杂外延层的外表面在第一区域具有第一粗糙度，在第二区域具有第二粗糙度。
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8.发明申请公开(公告)号：US20140021507A1
公开(公告)日：2014-01-23
申请号：US13981879
申请日：2012-02-07
IPC分类号： H01L33/52
CPC分类号： H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
摘要： An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
摘要翻译： 光电子半导体芯片具有半导体本体和设置半导体本体的基板。 半导体本体具有设置在第一导体类型的第一半导体层和第二导体类型的第二半导体层之间的有源区。 第一半导体层设置在面向衬底的有源区的一侧。 第一半导体层导电地连接到设置在衬底和半导体本体之间的第一端接层。 封装层设置在第一端接层和衬底之间，并且在半导体芯片的平面图中至少在限定半导体本体的侧面上的一些区域中突出。
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公开(公告)号：US08823037B2
公开(公告)日：2014-09-02
申请号：US13376006
申请日：2010-05-21
申请人： Markus Maute , Karl Engl
发明人： Markus Maute , Karl Engl
CPC分类号： H01L33/382 , H01L33/20 , H01L33/44
摘要： An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence.
摘要翻译： 光电子半导体本体具有用于发射和/或接收电磁辐射的前表面，与前表面相对设置的后表面，用于施加到支撑板上，并且有源半导体层序列沿着从 该前表面的后表面包括第一导电类型，有源层和第二导电类型的层。
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10.发明申请公开(公告)号：US20120168809A1
公开(公告)日：2012-07-05
申请号：US13376006
申请日：2011-05-21
申请人： Markus Maute , Karl Engl
发明人： Markus Maute , Karl Engl
CPC分类号： H01L33/382 , H01L33/20 , H01L33/44
摘要： An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence.
摘要翻译： 光电子半导体本体具有用于发射和/或接收电磁辐射的前表面，与前表面相对设置的后表面，用于施加到支撑板上，并且有源半导体层序列沿着从 该前表面的后表面包括第一导电类型，有源层和第二导电类型的层。
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