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公开(公告)号：US08043427B2
公开(公告)日：2011-10-25
申请号：US12011713
申请日：2008-01-29
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译： 硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且 控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。 控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。 本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。
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2.发明授权Process for producing p-doped and epitaxially coated semiconductor wafers from silicon 有权从硅生产p掺杂和外延涂覆的半导体晶片的工艺公开(公告)号：US07470323B2
公开(公告)日：2008-12-30
申请号：US11870565
申请日：2007-10-11
IPC分类号： C30B15/20
摘要： The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.
摘要翻译： Czochralski方法用于从硅产生p掺杂和外延涂覆的半导体晶片，其中拉取单晶硅，并且在拉时，掺杂硼，氢和氮，并将由此获得的单晶加工形成 外延涂覆的p掺杂半导体晶片。
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公开(公告)号：US20080113171A1
公开(公告)日：2008-05-15
申请号：US11857460
申请日：2007-09-19
CPC分类号： H01L21/3225 , C30B15/206 , C30B29/06 , C30B33/00 , Y10T428/24992
摘要： Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×107/cm3, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.
摘要翻译： 在5×10 11 / cm 3范围内，在晶片表面下方>20μm处的位置具有20至40nm的BMD密度的硅晶片，以及 尺寸> = 300nm的BMD的密度显示减少的滑脱位错和翘曲。 将晶片从在特定条件下生长的晶体切片，然后进行低温热处理和高温退火。
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4.发明申请Process For Producing P-Doped and Epitaxially Coated Semiconductor Wafers From Silicon 有权用于从硅生产P掺杂和外延涂覆的半导体晶片的工艺公开(公告)号：US20080096371A1
公开(公告)日：2008-04-24
申请号：US11870565
申请日：2007-10-11
IPC分类号： H01L21/20
摘要： The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.
摘要翻译： Czochralski方法用于从硅产生掺杂和外延涂覆的半导体晶片，其中拉取单晶硅，并且在拉制期间掺杂有硼，氢和氮，并且单个 将由此获得的晶体进行处理以形成外延涂覆的p-SUP-掺杂的半导体晶片。
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公开(公告)号：US20060254498A1
公开(公告)日：2006-11-16
申请号：US11487669
申请日：2006-07-17
申请人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
发明人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10S117/917 , Y10T117/1068
摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
摘要翻译： 在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。 根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。
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公开(公告)号：US08231725B2
公开(公告)日：2012-07-31
申请号：US13225822
申请日：2011-09-06
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译： 硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且 控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。 控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。 本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。
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公开(公告)号：US20080187736A1
公开(公告)日：2008-08-07
申请号：US12011713
申请日：2008-01-29
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译： 硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且 控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。 控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。 本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。
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公开(公告)号：US07335256B2
公开(公告)日：2008-02-26
申请号：US11487669
申请日：2006-07-17
申请人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
发明人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10S117/917 , Y10T117/1068
摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
摘要翻译： 在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。 根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。
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公开(公告)号：US08197594B2
公开(公告)日：2012-06-12
申请号：US11857460
申请日：2007-09-19
IPC分类号： C30B29/06
CPC分类号： H01L21/3225 , C30B15/206 , C30B29/06 , C30B33/00 , Y10T428/24992
摘要： Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×107/cm3, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.
摘要翻译： 在晶片表面的≥20μm的位置处，在5×10 11 / cm 3范围内具有尺寸在20至40nm之间的BMD的密度的硅晶片，以及尺寸为≥300nm＆lt; 1×107 / cm3的BMD的密度 ，表现出减滑脱位和翘曲。 将晶片从在特定条件下生长的晶体切片，然后进行低温热处理和高温退火。
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公开(公告)号：US20110316128A1
公开(公告)日：2011-12-29
申请号：US13225822
申请日：2011-09-06
IPC分类号： H01L29/02
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译： 硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且 控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。 控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。 本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。
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