公开(公告)号：US20060160321A1

公开(公告)日：2006-07-20

申请号：US10548222

申请日：2004-03-03

申请人： Masaaki Ichiyama ,  Teruno Nagura ,  Tomonori Ishikawa ,  Takaaki Sakurai ,  Yasuo Shimizu

发明人： Masaaki Ichiyama ,  Teruno Nagura ,  Tomonori Ishikawa ,  Takaaki Sakurai ,  Yasuo Shimizu

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： There is provided a method for trench isolation structure formation, which produces neither voids nor cracks within a groove. This method comprises the steps of: forming a groove on a surface of a silicon substrate; coating a polysilazane solution; prebaking the coating at a prebaking temperature regulated so that the temperature is raised in a temperature range of 50° C. to 400° C. over time; curing the coating at a temperature above the maximum prebaking temperature; and polishing and etching the film. The prebaking is carried out while raising the temperature either stepwise in two or more stages or in a monotonically increasing manner.

摘要翻译： 提供了一种用于沟槽隔离结构形成的方法，其在凹槽内既不产生空隙也不产生裂纹。 该方法包括以下步骤：在硅衬底的表面上形成沟槽; 涂覆聚硅氮烷溶液; 在预烘烤温度下预烘烤涂层，使温度在50℃至400℃的温度范围内随时间升高; 在高于最高预烘温度的温度下固化涂层; 并抛光和蚀刻该膜。 在两步或更多阶段或以单调增加的方式逐步升高温度的同时进行预烘烤。

公开(公告)号：US20070259106A1

公开(公告)日：2007-11-08

申请号：US11629592

申请日：2005-08-12

申请人： Yasuo Shimizu ,  Masaaki Ichiyama ,  Teruno Nagura

发明人： Yasuo Shimizu ,  Masaaki Ichiyama ,  Teruno Nagura

IPC分类号： B32B9/00 ,  C09D183/16 ,  H01B3/46

CPC分类号： C08G77/62 ,  C08K5/56 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02145 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/3162 ,  C08L2666/52

摘要： There are provided a process for producing a siliceous film having excellent insulating properties, and a coating composition for use in the process. The coating composition comprises a perhydropolysilazane or modified perhydropolysilazane having a number average molecular weight of 100 to 50,000 and an aluminum compound, the composition having an aluminum content of not less than 10 ppb and not more than 100 ppm in terms of the molar ratio of the aluminum atom to the silicon atom. The siliceous film is produced by coating the coating composition onto a substrate and firing the coated substrate in an atmosphere containing steam, oxygen, or a mixed gas composed of steam and oxygen.

摘要翻译： 提供了一种制备具有优异绝缘性能的硅质膜的方法和用于该方法的涂料组合物。 涂料组合物包括数均分子量为100〜50,000的全氢聚硅氮烷或改性的全氢聚硅氮烷，铝化合物的铝含量为10ppb以上且100ppm以下，以 铝原子与硅原子。 通过将涂料组合物涂布在基材上并在包含蒸汽，氧气或由蒸汽和氧气组成的混合气体的气氛中焙烧涂覆的基材来制备硅质膜。

公开(公告)号：US20080061398A1

公开(公告)日：2008-03-13

申请号：US11596785

申请日：2005-05-30

申请人： Teruno Nagura

发明人： Teruno Nagura

IPC分类号： H01L23/58 ,  H01L21/762

CPC分类号： H01L21/76224

摘要： This invention provides a base material with a siliceous film, which is free from voids and cracks in the interior of groove(s) in a trench isolation structure and has excellent adhesion between a substrate and a siliceous film, and a process for producing the base material with a siliceous film. A trench isolation structure is formed by a method comprising coating a silicon-containing polymer solution onto a substrate having trench isolation groove(s) of which the surface has been continuously covered with a silicon nitride liner film, and heat treating the coated substrate at a temperature of from 900° C. to 1200° C. The base material with a siliceous film is provided using the method.

摘要翻译： 本发明提供了一种具有硅质膜的基材，其在沟槽隔离结构中的沟槽内部没有空隙和裂纹，并且在基底和硅质膜之间具有优异的粘附性，以及用于制备基底的方法 材料与硅质薄膜。 沟槽隔离结构通过以下方法形成：包括将含硅聚合物溶液涂覆到具有沟槽隔离槽（其表面已经被氮化硅衬垫膜连续覆盖）的衬底上，并且以 使用该方法提供具有硅质膜的基材。