公开(公告)号：US20120031590A1

公开(公告)日：2012-02-09

申请号：US13264015

申请日：2010-04-14

申请人： Masafumi Kawanaka ,  Kenji Terano ,  Susumu Ishii

发明人： Masafumi Kawanaka ,  Kenji Terano ,  Susumu Ishii

IPC分类号： H01L23/467

CPC分类号： F24F1/0011 ,  F24F13/15 ,  F24F2001/0037 ,  F24F2001/0048 ,  F24F2013/221

摘要： An indoor unit of an air conditioning apparatus includes a casing, a heat exchanger, a fan, a first airflow direction adjusting plate adjusting a direction of airflow blown out from an air outlet by rotation about a first axial direction, a plurality of second airflow direction adjusting plates adjusting the direction of the airflow blown out from the air outlet by rotation about a second direction substantially perpendicular to the first direction, and a support member rotatably supporting the first airflow direction adjusting plate in the air outlet other than at both end portions. The second airflow direction adjusting plates include a third airflow direction adjusting plate and a fourth airflow direction adjusting plate placed in a location such that a distance to the support member from the fourth airflow direction adjusting plate is smaller than a distance to the support member from the third airflow direction adjusting plate.

摘要翻译： 空调装置的室内机包括壳体，热交换器，风扇，第一风向调整板，其通过围绕第一轴向旋转而调节从出风口吹出的气流的方向，多个第二风向 调节板，其通过围绕与第一方向大致垂直的第二方向旋转而调节从出气口吹出的气流的方向;以及支撑构件，其可旋转地将第一风向调节板支撑在除了两端部之外的空气出口中。 第二风向调节板包括第三风向调节板和第四风向调节板，所述第三风向调节板和第四风向调节板被放置在使得从第四风向调节板到支撑构件的距离小于从第四风向调节板到距支撑构件的距离的位置 第三风向调节板。

公开(公告)号：US09377206B2

公开(公告)日：2016-06-28

申请号：US13264015

申请日：2010-04-14

申请人： Masafumi Kawanaka ,  Kenji Terano ,  Susumu Ishii

发明人： Masafumi Kawanaka ,  Kenji Terano ,  Susumu Ishii

IPC分类号： F24F13/08 ,  B60H1/34 ,  F24F1/00 ,  F24F13/22

CPC分类号： F24F1/0011 ,  F24F13/15 ,  F24F2001/0037 ,  F24F2001/0048 ,  F24F2013/221

摘要： An indoor unit of an air conditioning apparatus includes a casing, a heat exchanger, a fan, a first airflow direction adjusting plate adjusting a direction of airflow blown out from an air outlet by rotation about a first axial direction, a plurality of second airflow direction adjusting plates adjusting the direction of the airflow blown out from the air outlet by rotation about a second direction substantially perpendicular to the first direction, and a support member rotatably supporting the first airflow direction adjusting plate in the air outlet other than at both end portions. The second airflow direction adjusting plates include a third airflow direction adjusting plate and a fourth airflow direction adjusting plate placed in a location such that a distance to the support member from the fourth airflow direction adjusting plate is smaller than a distance to the support member from the third airflow direction adjusting plate.

摘要翻译： 空调装置的室内机包括壳体，热交换器，风扇，第一风向调整板，其通过围绕第一轴向旋转而调节从出风口吹出的气流的方向，多个第二风向 调节板，其通过围绕与第一方向大致垂直的第二方向旋转而调节从出气口吹出的气流的方向;以及支撑构件，其可旋转地将第一风向调节板支撑在除了两端部之外的空气出口中。 第二风向调节板包括第三风向调节板和第四风向调节板，所述第三风向调节板和第四风向调节板被放置在使得从第四风向调节板到支撑构件的距离小于从第四风向调节板到距支撑构件的距离的位置 第三风向调节板。

公开(公告)号：US08332190B2

公开(公告)日：2012-12-11

申请号：US12517258

申请日：2007-12-13

申请人： Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

发明人： Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

IPC分类号： G06F17/50 ,  H01L21/82

CPC分类号： G06F17/5036

摘要： Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element. With reference to an electric network supplied from an electric network input unit (2) and a heat network supplied from a heat network input unit (3), a simulation unit (4) determines a first heat generation temperature resulting from the amount of self-heat generation of that element and a second heat generating temperature resulting from the amount of heat flowing into that element from other elements, respectively, for a plurality of elements which make up a semiconductor integrated circuit, calculates the element temperature of that element based on the first and second heat generation temperatures, and then calculates the voltage value and the current value in the element at that element temperature based on previously provided data indicative of temperature dependency of that element.

摘要翻译： 通过考虑由于元件的自加热引起的温度变化以及由于邻接的加热器元件的热传递引起的温度变化，可以精确地预测电路元件的特性。 参考从电网输入单元（2）提供的电网和从热网输入单元（3）提供的热网络，模拟单元（4）确定由自适应量产生的第一发热温度， 对于构成半导体集成电路的多个元件，该元件的发热和由分别从其它元件流入该元件的热量产生的第二发热温度基于该元件的温度来计算元件温度 第一和第二发热温度，然后基于先前提供的指示该元件的温度依赖性的数据计算该元件温度下的元件中的电压值和电流值。

公开(公告)号：US20110006388A1

公开(公告)日：2011-01-13

申请号：US12919460

申请日：2009-02-13

申请人： Masafumi Kawanaka

发明人： Masafumi Kawanaka

IPC分类号： H01L29/66

CPC分类号： H01L23/38 ,  H01L27/16 ,  H01L29/732 ,  H01L35/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device which can actively dissipate heat in response to operation is provided. A Seebeck element 310 is buried as a thermoelectric conversion element. The Seebeck element 310 is provided inside a semiconductor element, and has one end disposed proximal to a heat generation part of the semiconductor element and the other end disposed in a distal side of the heat generation part. In addition, a Peltier element 320 is buried as a heat dissipation element. A Peltier element 320 has one end disposed proximal to the heat generation part and the other end disposed in a distal to the heat generation part, and the other end disposed in a distal end side of the heat generation part. A current according to the thermoelectromotive force generated by the Seebeck element 310 is applied to the Peltier element 320.

摘要翻译： 提供了可以主动地散热来响应于操作的半导体器件。 塞贝克元件310被埋入作为热电转换元件。 塞贝克元件310设置在半导体元件内部，并且一端设置在半导体元件的发热部附近，另一端设置在发热部的远侧。 此外，珀耳帖元件320被掩埋为散热元件。 珀耳帖元件320的一端靠近发热部分设置，另一端设置在远离发热部分的另一端，另一端设置在发热部分的远端侧。 根据由塞贝克元件310产生的热电动势的电流被施加到珀尔帖元件320。

公开(公告)号：US5047365A

公开(公告)日：1991-09-10

申请号：US328672

申请日：1989-03-27

申请人： Masafumi Kawanaka ,  Jun'ichi Sone ,  Tooru Kimura

发明人： Masafumi Kawanaka ,  Jun'ichi Sone ,  Tooru Kimura

IPC分类号： C30B23/08 ,  C30B29/42 ,  H01L21/20 ,  H01L21/203 ,  H01L21/331 ,  H01L29/267 ,  H01L29/73 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L21/02395 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02631 ,  H01L29/66318 ,  Y10S148/007 ,  Y10S148/041 ,  Y10S148/072 ,  Y10S438/916 ,  Y10S438/933

摘要： A heterostructure bipolar transistor is formed by a process of steps of holding an N-type gallium arsenide body using as an emitter region in a high vacuum of 10.sup.-9 torr to 10.sup.-13 torr at a first temperature of 400.degree. C. to 1,000.degree. C. where arsenic on a surface of the gallium arsenide body drifts away, lowering the first temperature to a second temperature of 300.degree. C. to 400.degree. C. to start a molecular beam epitaxial growth of a germanium, and forming an N-type germanium layer using as a collector region.

公开(公告)号：US20100057412A1

公开(公告)日：2010-03-04

申请号：US12517258

申请日：2007-12-13

申请人： Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

发明人： Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

IPC分类号： G06G7/56 ,  G06F17/50 ,  G06G7/62 ,  G06F17/10

CPC分类号： G06F17/5036

摘要： Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element. With reference to an electric network supplied from an electric network input unit (2) and a heat network supplied from a heat network input unit (3), a simulation unit (4) determines a first heat generation temperature resulting from the amount of self-heat generation of that element and a second heat generating temperature resulting from the amount of heat flowing into that element from other elements, respectively, for a plurality of elements which make up a semiconductor integrated circuit, calculates the element temperature of that element based on the first and second heat generation temperatures, and then calculates the voltage value and the current value in the element at that element temperature based on previously provided data indicative of temperature dependency of that element.

摘要翻译： 通过考虑由于元件的自加热引起的温度变化以及由于邻接的加热器元件的热传递引起的温度变化，可以精确地预测电路元件的特性。 参考从电网输入单元（2）提供的电网和从热网输入单元（3）提供的热网络，模拟单元（4）确定由自适应量产生的第一发热温度， 对于构成半导体集成电路的多个元件，该元件的发热和由分别从其它元件流入该元件的热量产生的第二发热温度基于该元件的温度来计算元件温度 第一和第二发热温度，然后基于先前提供的指示该元件的温度依赖性的数据计算该元件温度下的元件中的电压值和电流值。