-
公开(公告)号：US20100057412A1
公开(公告)日：2010-03-04
申请号：US12517258
申请日：2007-12-13
CPC分类号： G06F17/5036
摘要： Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element. With reference to an electric network supplied from an electric network input unit (2) and a heat network supplied from a heat network input unit (3), a simulation unit (4) determines a first heat generation temperature resulting from the amount of self-heat generation of that element and a second heat generating temperature resulting from the amount of heat flowing into that element from other elements, respectively, for a plurality of elements which make up a semiconductor integrated circuit, calculates the element temperature of that element based on the first and second heat generation temperatures, and then calculates the voltage value and the current value in the element at that element temperature based on previously provided data indicative of temperature dependency of that element.
摘要翻译： 通过考虑由于元件的自加热引起的温度变化以及由于邻接的加热器元件的热传递引起的温度变化，可以精确地预测电路元件的特性。 参考从电网输入单元（2）提供的电网和从热网输入单元（3）提供的热网络，模拟单元（4）确定由自适应量产生的第一发热温度， 对于构成半导体集成电路的多个元件，该元件的发热和由分别从其它元件流入该元件的热量产生的第二发热温度基于该元件的温度来计算元件温度 第一和第二发热温度，然后基于先前提供的指示该元件的温度依赖性的数据计算该元件温度下的元件中的电压值和电流值。
-
公开(公告)号：US08332190B2
公开(公告)日：2012-12-11
申请号：US12517258
申请日：2007-12-13
CPC分类号： G06F17/5036
摘要： Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element. With reference to an electric network supplied from an electric network input unit (2) and a heat network supplied from a heat network input unit (3), a simulation unit (4) determines a first heat generation temperature resulting from the amount of self-heat generation of that element and a second heat generating temperature resulting from the amount of heat flowing into that element from other elements, respectively, for a plurality of elements which make up a semiconductor integrated circuit, calculates the element temperature of that element based on the first and second heat generation temperatures, and then calculates the voltage value and the current value in the element at that element temperature based on previously provided data indicative of temperature dependency of that element.
摘要翻译： 通过考虑由于元件的自加热引起的温度变化以及由于邻接的加热器元件的热传递引起的温度变化，可以精确地预测电路元件的特性。 参考从电网输入单元（2）提供的电网和从热网输入单元（3）提供的热网络，模拟单元（4）确定由自适应量产生的第一发热温度， 对于构成半导体集成电路的多个元件，该元件的发热和由分别从其它元件流入该元件的热量产生的第二发热温度基于该元件的温度来计算元件温度 第一和第二发热温度，然后基于先前提供的指示该元件的温度依赖性的数据计算该元件温度下的元件中的电压值和电流值。
-
3.发明授权公开(公告)号：US08476756B2
公开(公告)日：2013-07-02
申请号：US13137927
申请日：2011-09-21
CPC分类号： H01L23/367 , H01L23/373 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2223/6644 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/16195 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a semiconductor element having a rectangular two-dimensional geometry and serving as a heat source, a first heat sink section including the semiconductor element mounted thereon, and a second heat sink section joined to an opposite side of the first heat sink section that includes the semiconductor element. A relation among directional components of thermal conductivity is K1yy≧K1xx>K1zz, where directional components of a three-dimensional thermal conductivity of the heat sink section in X, Y, and Z directions are determined as Kxx, Kyy, and Kzz. A relation among directional components of a thermal conductivity of the second heat sink section is K2zz≧K2yy>K2xx or K2yy≧K2zz>K2xx, where the directional components of the thermal conductivity of the second heat sink section in X, Y, and X directions are determined as K2xx, K2yy, and K2zz.
摘要翻译： 半导体器件包括具有矩形二维几何形状并用作热源的半导体元件，包括安装在其上的半导体元件的第一散热部分和与第一散热部分相对的一侧连接的第二散热部分 其包括半导体元件。 导热方向分量之间的关系为K1yy> = K1xx> K1zz，其中X，Y和Z方向上的散热器部分的三维热导率的方向分量被确定为Kxx，Kyy和Kzz。 第二散热器部分的热导率的方向分量之间的关系是K2zz> = K2yy> K2xx或K2yy> = K2zz> K2xx，其中X，Y和Y中的第二散热器部分的热导率的方向分量 X方向确定为K2xx，K2yy和K2zz。
-
公开(公告)号：US20080230807A1
公开(公告)日：2008-09-25
申请号：US11547402
申请日：2005-03-30
CPC分类号： H01L29/7371 , H01L23/367 , H01L27/0605 , H01L27/0664 , H01L29/66318 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.
摘要翻译： 提供具有足够高的散热性能同时抑制芯片面积的增加的半导体器件。 在半导体器件1中，多个HBT 20和多个二极管30一维地交替地布置在半导体衬底10上。 二极管30的阳极电极36通过公共发射极配线42连接到HBT 20的发射极27。 二极管30作为散热元件散发到半导体衬底10上，从发射极27传播通过公共发射极配线42的热，并且还用作并联连接在HBT 20的发射极和集电极之间的保护二极管。
-
5.发明授权公开(公告)号：US08063484B2
公开(公告)日：2011-11-22
申请号：US12311701
申请日：2007-10-25
IPC分类号： H01L23/495 , H01L23/10 , H01L23/34
CPC分类号： H01L23/367 , H01L23/373 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2223/6644 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/16195 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz≧Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.
摘要翻译： 一种半导体器件，包括：具有矩形二维几何形状并用作热源的半导体元件20; 以及其上安装有半导体元件20的散热部分25，其中所述热导率的方向分量之间的关系为：Kzz≥Kyy> Kxx，其中散热部分25的三维热导率的方向分量在X ，Y和Z方向被确定为Kxx，Kyy和Kzz，并且其中半导体元件20的长边方向被定义为X方向，其短边方向被定义为Y方向，并且厚度方向被定义为Z方向 。
-
公开(公告)号：US20100007013A1
公开(公告)日：2010-01-14
申请号：US12311701
申请日：2007-10-25
IPC分类号： H01L23/34
CPC分类号： H01L23/367 , H01L23/373 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2223/6644 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/16195 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz≧Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.
摘要翻译： 一种半导体器件，包括：具有矩形二维几何形状并用作热源的半导体元件20; 以及其上安装有半导体元件20的散热部分25，其中所述热导率的方向分量之间的关系为：Kzz> = Kyy> Kxx，其中散热部分25的三维热导率的方向分量在 X，Y和Z方向被确定为Kxx，Kyy和Kzz，并且其中半导体元件20的长边方向被定义为X方向，其短边方向被定义为Y方向，并且厚度方向被定义为Z 方向。
-
公开(公告)号：US20120012995A1
公开(公告)日：2012-01-19
申请号：US13137927
申请日：2011-09-21
IPC分类号： H01L23/34
CPC分类号： H01L23/367 , H01L23/373 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2223/6644 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/16195 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a semiconductor element having a rectangular two-dimensional geometry and serving as a heat source, a first heat sink section including the semiconductor element mounted thereon, and a second heat sink section joined to an opposite side of the first heat sink section that includes the semiconductor element. A relation among directional components of thermal conductivity is K1yy≧K1xx>K1zz, where directional components of a three-dimensional thermal conductivity of the heat sink section in X, Y, and Z directions are determined as Kxx, Kyy, and Kzz. A relation among directional components of a thermal conductivity of the second heat sink section is K2zz≧K2yy>K2xx or K2yy≧K2zz>K2xx, where the directional components of the thermal conductivity of the second heat sink section in X, Y, and X directions are determined as K2xx, K2yy, and K2zz.
摘要翻译： 半导体器件包括具有矩形二维几何形状并用作热源的半导体元件，包括安装在其上的半导体元件的第一散热部分和与第一散热部分相对的一侧连接的第二散热部分 其包括半导体元件。 导热方向分量之间的关系为K1yy≥K1xx> K1zz，其中X，Y和Z方向上散热片部分的三维热导率的方向分量确定为Kxx，Kyy和Kzz。 第二散热片部分的热导率的方向分量之间的关系为K2zz≥K2yy> K2xx或K2yy≥K2zz> K2xx，其中X，Y和X方向上第二散热片部分的热导率的方向分量 被确定为K2xx，K2yy和K2zz。
-
公开(公告)号：US07741700B2
公开(公告)日：2010-06-22
申请号：US11547402
申请日：2005-03-30
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7371 , H01L23/367 , H01L27/0605 , H01L27/0664 , H01L29/66318 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.
摘要翻译： 提供具有足够高的散热性能同时抑制芯片面积的增加的半导体器件。 在半导体器件1中，多个HBT 20和多个二极管30在半导体衬底10上一维地交替地布置。二极管30的阳极电极36通过公共发射极布线42连接到HBT 20的发射电极27.二极管 30作为散热元件散发到半导体衬底10上，从发射极27传播通过公共发射极配线42的热，并且还用作并联连接在HBT 20的发射极和集电极之间的保护二极管。
-
9.发明授权公开(公告)号：US08630835B2
公开(公告)日：2014-01-14
申请号：US13129341
申请日：2009-09-17
申请人： Masahiro Tanomura
发明人： Masahiro Tanomura
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： Provided are a device model, a recording medium storing a program, a simulation circuit, device, and method that calculate a local temperature increase in an element. The device model according to the present invention is used for a semiconductor circuit simulation and has at least two model parameters. The model parameters include an electrical model describing temperature characteristics and a thermal model describing thermal characteristics and corresponding to the electrical model.
摘要翻译： 提供了一种计算元件中的局部温度升高的装置型号，存储程序的记录介质，模拟电路，装置和方法。 根据本发明的器件模型用于半导体电路仿真，并且具有至少两个模型参数。 模型参数包括描述温度特性的电气模型和描述热特性并对应于电气模型的热模型。
-
公开(公告)号：US20090102563A1
公开(公告)日：2009-04-23
申请号：US11990871
申请日：2006-07-24
申请人： Masahiro Tanomura , Kouji Matsunaga
发明人： Masahiro Tanomura , Kouji Matsunaga
IPC分类号： H03F1/34
CPC分类号： H03F1/42 , H03F1/08 , H03F1/34 , H03F2200/36
摘要： The present invention solves characteristic deterioration caused by peaking and a ground inductance, and provides a transimpedance amplifier capable of achieving a higher gain and a wider band. For this purpose, the transimpedance amplifier is configured to include a feedback circuit having two or more extreme frequencies and having a filter characteristic which is flat with respect to frequencies in a frequency region not more than a smallest extreme frequency among the extreme frequencies, which is flat with respect to frequencies in a frequency region not less than a largest extreme frequency among the extreme frequencies, and which has at least one negative inclination portion with respect to frequencies in a frequency region between the smallest and largest extreme frequencies.
摘要翻译： 本发明解决了由峰值和接地电感引起的特性劣化，并且提供了能够实现更高增益和更宽带的跨阻放大器。 为此，跨阻放大器被配置为包括具有两个或多个极端频率的反馈电路，并且具有相对于极端频率中不超过最小极端频率的频率区域中的频率为平坦的滤波器特性，其为 相对于极端频率以上的最大极端频率以上的频率区域中的频率平坦，并且相对于最小和最大极端频率之间的频率区域中的频率具有至少一个负倾斜部分。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.019 秒)