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    Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device
    5.
    发明授权
    Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device 失效
    用于制造半导体器件的半导体器件制造方法和化学流体

    公开(公告)号：US07776754B2

    公开(公告)日：2010-08-17

    申请号：US11545515

    申请日：2006-10-11

    申请人： Yoshihiro Uozumi ,  Kazuhiko Takase ,  Tsuyoshi Matsumura

    发明人： Yoshihiro Uozumi ,  Kazuhiko Takase ,  Tsuyoshi Matsumura

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76826

    摘要： This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.

    摘要翻译： 本公开涉及一种制造半导体器件的方法，该半导体器件包括在衬底上提供介电膜; 在电介质膜上提供掩模材料; 使用掩模材料蚀刻电介质膜; 进行通过蚀刻所述电介质膜产生的金属残渣的第一处理; 进行通过蚀刻所述电介质膜而形成的所述电介质膜的侧壁疏水性的第二处理; 以及进行通过蚀刻所述电介质膜产生的硅残渣的第三处理。

    Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device
    6.
    发明申请
    Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device 失效
    用于制造半导体器件的半导体器件制造方法和化学流体

    公开(公告)号：US20070082491A1

    公开(公告)日：2007-04-12

    申请号：US11545515

    申请日：2006-10-11

    申请人： Yoshihiro Uozumi ,  Kazuhiko Takase ,  Tsuyoshi Matsumura

    发明人： Yoshihiro Uozumi ,  Kazuhiko Takase ,  Tsuyoshi Matsumura

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76826

    摘要： This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.

    摘要翻译： 本公开涉及一种制造半导体器件的方法，该半导体器件包括在衬底上提供介电膜; 在电介质膜上提供掩模材料; 使用掩模材料蚀刻电介质膜; 进行通过蚀刻所述电介质膜产生的金属残渣的第一处理; 进行通过蚀刻所述电介质膜而形成的所述电介质膜的侧壁疏水性的第二处理; 以及进行通过蚀刻所述电介质膜产生的硅残渣的第三处理。

    Method for cleaning semiconductor wafers
    7.
    发明授权
    Method for cleaning semiconductor wafers 失效
    清洗半导体晶圆的方法

    公开(公告)号：US5810940A

    公开(公告)日：1998-09-22

    申请号：US710400

    申请日：1996-09-17

    申请人： Yuji Fukazawa ,  Takahito Nakajima ,  Kazuhiko Takase

    发明人： Yuji Fukazawa ,  Takahito Nakajima ,  Kazuhiko Takase

    IPC分类号： H01L21/304 ,  H01L21/306 ,  C03C23/00

    CPC分类号： H01L21/02052 ,  Y10S134/902

    摘要： For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.

    摘要翻译： 为了清洁半导体晶片而不将其暴露于大气中，在将半导体晶片放置在通过第一控制阀填充有去离子水的清洁容器中之后，第一清洁流体通过第二控制阀供应到清洁容器，因此 去离子水溢出。 然后通过第三控制阀将第二清洁流体供应到容器，使得第一清洗流体溢出以产生包含第一清洗流体的混合流体，从而清洁其中的半导体晶片。

    Residue treatment system, residue treatment method, and method of manufacturing semiconductor device
    8.
    发明申请
    Residue treatment system, residue treatment method, and method of manufacturing semiconductor device 失效
    残渣处理系统，残渣处理方法及制造半导体装置的方法

    公开(公告)号：US20070178702A1

    公开(公告)日：2007-08-02

    申请号：US11655100

    申请日：2007-01-19

    申请人： Tsuyoshi Matsumura ,  Kazuhiko Takase

    发明人： Tsuyoshi Matsumura ,  Kazuhiko Takase

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02063 ,  H01L22/20 ,  Y10S438/963

    摘要： This disclosure concerns a residue treatment system including a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.

    摘要翻译： 本公开涉及一种残渣处理系统，其包括用蚀刻流体处理残余物的处理槽，残留物通过干蚀刻在形成在绝缘膜中的沟槽中产生; 测量单元，其测量蚀刻流体的特征量; 以及控制单元，其基于通过测量特征量获得的值来计算用于去除残留物的处理时间，控制单元通过使用绝缘膜的蚀刻速率与特征量之间的相关性来计算处理时间。

    Semiconductor manufacturing method for removing residue generated by dry etching
    9.
    发明授权
    Semiconductor manufacturing method for removing residue generated by dry etching 失效
    用于去除由干蚀刻产生的残留物的半导体制造方法

    公开(公告)号：US07700490B2

    公开(公告)日：2010-04-20

    申请号：US11655100

    申请日：2007-01-19

    申请人： Tsuyoshi Matsumura ,  Kazuhiko Takase

    发明人： Tsuyoshi Matsumura ,  Kazuhiko Takase

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02063 ,  H01L22/20 ,  Y10S438/963

    摘要： A residue treatment system includes a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.

    摘要翻译： 残渣处理系统包括用蚀刻液处理残渣的处理槽，残留物通过干蚀刻在形成于绝缘膜中的沟槽中产生; 测量单元，其测量蚀刻流体的特征量; 以及控制单元，其基于通过测量特征量获得的值来计算用于去除残留物的处理时间，控制单元通过使用绝缘膜的蚀刻速率与特征量之间的相关性来计算处理时间。

    Cleaning method and a cleaning device for cleaning an edge portion and back face of a wafer
    10.
    发明授权
    Cleaning method and a cleaning device for cleaning an edge portion and back face of a wafer 失效
    用于清洁晶片的边缘部分和背面的清洁方法和清洁装置

    公开(公告)号：US07632358B2

    公开(公告)日：2009-12-15

    申请号：US11442974

    申请日：2006-05-31

    申请人： Masao Iwase ,  Kazuhiko Takase

    发明人： Masao Iwase ,  Kazuhiko Takase

    IPC分类号： B08B7/04 ,  B05D3/12

    CPC分类号： H01L21/02087 ,  H01L21/67051 ,  H01L22/12 ,  Y10S134/902

    摘要： A method for cleaning a wafer includes measuring a cross-sectional shape of an edge portion of wafer cut along a radial direction, assigning the measured shape to one of a plurality of groups classified by the shapes, determining an amount of cleaning liquid to be supplied and rotational speed at which the wafer is rotated depending a determination criterion, rotating the wafer and spraying the cleaning liquid toward a back face of the rotating wafer, and cleaning the edge portion and the back face of the wafer by spreading the cleaning liquid to the edge portion of the wafer.

    摘要翻译： 一种清洗晶片的方法包括测量沿着径向切割的晶片的边缘部分的横截面形状，将测量的形状分配给由形状分类的多个组中的一个组，确定要供应的清洗液体的量 和晶片根据判定标准旋转的转速，旋转晶片并将清洗液朝向旋转晶片的背面喷射，并且通过将清洗液喷洒到晶片的边缘部分和背面来清洁晶片的边缘部分和背面 晶片的边缘部分。