摘要:
A high-activity hydrotreating catalyst containing a uniformly dispersed active component at a high concentration, and particularly useful for deep desulfurization of a hydrocarbon oil for its high hydrodesulfurization activity. The present invention also provides a hydrotreating process using the same catalyst.
摘要:
The present invention relates to a hydrotreating catalyst composed of a carrier having a Brønsted acid content of at least 50 &mgr;mol/g such as a silica-alumina carrier or a silica-alumina-third component carrier, in which the silica is dispersed to high degree and a Brønsted acid content is at least 50 &mgr;mol/g, and at least one active component (A) selected from the elements of Group 8 of the Periodic Table and at least one active component (B) selected from the elements of Group 6 of the Periodic Table, supported on said carrier. The present invention also relates to a method for hydrotreating hydrocarbon oils using the same. The hydrotreating catalyst of the present invention provides excellent tolerance to the inhibiting effect of hydrogen sulfide, high desulfurization activity, and exhibits notable effects for deep desulfurization of hydrocarbon oils containing high contents of sulfur, in particular gas oil fractions containing difficult-to-remove sulfur compounds. The hydrotreating catalyst of the present invention is also very effective for hydrodenitrogenation, hydrocracking, hydrodearomatization, hydroisomerization, hydrofining and the like of hydrocarbon oils.
摘要:
A method for producing a hydrotreating catalyst which relates to the production of a solid catalyst composed of a carrier impregnated with an active component, to give a catalyst for hydrotreating hydrocarbon oils, which contains a large quantity of a hydrogenation-active component and uniform, crystalline composite metal compound, and shows high catalytic activity.
摘要:
This invention disclose an amorphous silicon semiconductor film containing at least hydrogen, carbon and oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of carbon and oxygen in said film is at least 0.1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. Since adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as a window material was realized.
摘要:
This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.