公开(公告)号：US20050056865A1

公开(公告)日：2005-03-17

申请号：US10940690

申请日：2004-09-15

申请人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

发明人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L29/739

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01L33/0095 ,  H01L2224/14

摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。 该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。 可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成 化合物半导体层。 两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

公开(公告)号：US07193247B2

公开(公告)日：2007-03-20

申请号：US11276653

申请日：2006-03-09

申请人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

发明人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01L33/0095 ,  H01L2224/14

摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。 该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。 可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成 化合物半导体层。 两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

公开(公告)号：US07049160B2

公开(公告)日：2006-05-23

申请号：US10940690

申请日：2004-09-15

申请人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

发明人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01L33/0095 ,  H01L2224/14

摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。 该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。 可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成 化合物半导体层。 两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

公开(公告)号：US20060151802A1

公开(公告)日：2006-07-13

申请号：US11276653

申请日：2006-03-09

申请人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

发明人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01L33/0095 ,  H01L2224/14

摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。 该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。 可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成 化合物半导体层。 两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

公开(公告)号：US08620142B2

公开(公告)日：2013-12-31

申请号：US12717820

申请日：2010-03-04

申请人： Kenichi Morikawa

发明人： Kenichi Morikawa

IPC分类号： H04N9/80 ,  H04N5/92 ,  H04N7/01 ,  H04N7/12 ,  H04N7/025 ,  G06T11/40 ,  G09G5/36

CPC分类号： H04N5/783 ,  H04N5/775

摘要： When multi-frame rate contents including many high frame-rate portions are played back in a video player, a playback can be easily selected by showing to a user a playback time in respective playback modes of a normal playback and a slow playback. The video player includes a rate analysis unit for calculating playback time in the respective playback modes by analyzing a frame rate of multi-frame rate contents, and thumbnail images of multi-frame rate contents and playback time in the respective playback modes are listed and displayed as display units in a pair with respect to a plurality of contents.

摘要翻译： 当在视频播放器中播放包括许多高帧率部分的多帧速率内容时，可以通过向用户显示正常播放和慢播放的各个重放模式中的播放时间来容易地选择播放。 视频播放器包括速率分析单元，用于通过分析多帧速率内容的帧速率来计算各个重放模式中的重放时间，并且列出并显示各个重放模式中的多帧速率内容和播放时间的缩略图像 作为与多个内容成对的显示单元。

公开(公告)号：US20090310016A1

公开(公告)日：2009-12-17

申请号：US12307842

申请日：2007-08-08

申请人： Tetsu Fukuda ,  Hiroshi Uchiike ,  Kenichi Morikawa ,  Shuntaro Aratani

发明人： Tetsu Fukuda ,  Hiroshi Uchiike ,  Kenichi Morikawa ,  Shuntaro Aratani

IPC分类号： H04N7/01

CPC分类号： H04N5/44513 ,  H04N5/4401 ,  H04N5/46 ,  H04N7/0122 ,  H04N9/3188 ,  H04N21/440272 ,  H04N21/4858 ,  H04N21/4882

摘要： There is provided a video output apparatus which inputs a video content that can have at least three different resolutions. A format detector (112) detects an alteration of a resolution of a video content. A scaling processor (105) scales up the video content at a set scale ratio. Upon detection of an alteration of the resolution, the format detector (112) selects one of a plurality of supplemental video pictures, which are prepared in advance in a memory (113), in accordance with the degree of decrease of the resolution after the alteration to that before the alteration. An image composition unit (106) controls a display unit (110) to display the supplemental video picture together with a video associated with the video content via a video display unit (108). Even when the resolution decreases considerably, a decrease in user's convenience can be suppressed.

摘要翻译： 提供一种输入可以具有至少三种不同分辨率的视频内容的视频输出装置。 格式检测器（112）检测视频内容的分辨率的改变。 缩放处理器（105）以设定的比例缩放视频内容。 在检测到分辨率的改变时，格式检测器（112）根据改变后的分辨率的降低程度来选择预先在存储器（113）中准备的多个补充视频图像之一 在改变之前。 图像合成单元（106）通过视频显示单元（108）控制显示单元（110）以及与视频内容相关联的视频显示补充视频图像。 即使分辨率显着降低，也可以抑制用户的便利性的降低。

公开(公告)号：US20090160949A1

公开(公告)日：2009-06-25

申请号：US12276821

申请日：2008-11-24

申请人： Eiichi Matsuzaki ,  Kenichi Morikawa

发明人： Eiichi Matsuzaki ,  Kenichi Morikawa

IPC分类号： H04N5/228

CPC分类号： H04N5/23248 ,  H04N5/23254 ,  H04N5/23267

摘要： A video processing apparatus comprises a signal input unit which receives a video signal, a shift detection unit which detects a shift period in shooting and a maximum shift amount during the shift period from the video signal input from the signal input unit, an effective area detection unit which detects an object area common throughout the shift period as an effective area on the basis of the shift period and the maximum shift amount, a correction unit which corrects a shift during the shift period by reading out data from the effective area, and a resolution conversion unit which performs enlarge processing to convert a size of the effective area read out by the correction unit into an output image size.

摘要翻译： 一种视频处理装置，包括接收视频信号的信号输入单元，检测拍摄中的移位期间的移位检测单元和从信号输入单元输入的视频信号的移位期间的最大偏移量，有效区域检测 基于所述移位期间和所述最大偏移量，检测在所述移位期间共同的对象区域作为有效区域的单元，校正单元，其通过从所述有效区域读出数据来校正所述移位期间的移位，以及 分辨率转换单元，其执行放大处理以将由校正单元读出的有效区域的大小转换为输出图像大小。

公开(公告)号：US20050207412A1

公开(公告)日：2005-09-22

申请号：US11075592

申请日：2005-03-09

申请人： Jun Kawashima ,  Kazuhiko Morimura ,  Kenichi Morikawa

发明人： Jun Kawashima ,  Kazuhiko Morimura ,  Kenichi Morikawa

IPC分类号： H04L12/70 ,  H04L12/801 ,  H04L12/853 ,  H04L12/885 ,  H04L12/911 ,  H04L12/56

CPC分类号： H04L49/206

摘要： A switching apparatus includes an identification device for identifying received real-time packets; a measurement device for measuring a reception interval of the real-time packets according to the identification identified by the identification device; and an output device for giving priority to the real-time packets over other types of packets and outputting the real-time packet by priority based on the measurement measured by the measurement device.

摘要翻译： 一种切换装置，包括用于识别所接收的实时分组的识别装置; 测量装置，用于根据识别装置识别的标识来测量实时包的接收间隔; 以及输出装置，用于根据其他类型的分组优先实时分组，并且基于由测量装置测量的测量优先输出实时分组。

公开(公告)号：US08319841B2

公开(公告)日：2012-11-27

申请号：US12276821

申请日：2008-11-24

申请人： Eiichi Matsuzaki ,  Kenichi Morikawa

发明人： Eiichi Matsuzaki ,  Kenichi Morikawa

IPC分类号： H04N5/228

CPC分类号： H04N5/23248 ,  H04N5/23254 ,  H04N5/23267

摘要： A video processing apparatus comprises a signal input unit which receives a video signal, a shift detection unit which detects a shift period in shooting and a maximum shift amount during the shift period from the video signal input from the signal input unit, an effective area detection unit which detects an object area common throughout the shift period as an effective area on the basis of the shift period and the maximum shift amount, a correction unit which corrects a shift during the shift period by reading out data from the effective area, and a resolution conversion unit which performs enlarge processing to convert a size of the effective area read out by the correction unit into an output image size.

摘要翻译： 一种视频处理装置，包括接收视频信号的信号输入单元，检测拍摄中的移位期间的移位检测单元和从信号输入单元输入的视频信号的移位期间的最大偏移量，有效区域检测 基于所述移位期间和所述最大偏移量，检测在所述移位期间共同的对象区域作为有效区域的单元，校正单元，其通过从所述有效区域读出数据来校正所述移位期间的移位，以及 分辨率转换单元，其执行放大处理以将由校正单元读出的有效区域的大小转换为输出图像大小。

公开(公告)号：US20100291545A1

公开(公告)日：2010-11-18

申请号：US12670383

申请日：2008-07-25

申请人： Takaji Wakita ,  Tetsuro Suzuki ,  Kenichi Morikawa ,  Noriaki Omi ,  Noriko Nakamura ,  Daisuke Akazawa

发明人： Takaji Wakita ,  Tetsuro Suzuki ,  Kenichi Morikawa ,  Noriaki Omi ,  Noriko Nakamura ,  Daisuke Akazawa

IPC分类号： C12Q1/70 ,  C07K16/10

CPC分类号： C07K16/109 ,  C07K14/005 ,  C07K2317/56 ,  C07K2317/565 ,  C07K2317/567 ,  C07K2317/76 ,  C12N2770/24222 ,  G01N2333/186

摘要： The objection of the invention is to provide an antibody that inhibits infection with hepatitis C virus (HCV). To this end, this invention provides an antibody that recognizes the hepatitis C virus (HCV) particle obtained from the hepatitis C virus (HCV) genome comprising the following (i) and (ii) ligated to each other as an antigen and has an inhibitory activity on infection with hepatitis C virus (HCV): (i) (a) the 5′-untranslated region, the core protein-encoding sequence, the E1 protein-encoding sequence, the E2 protein-encoding sequence, and the p7 protein-encoding sequence of the JFH-1 strain of the hepatitis C virus (HCV) or (b) the 5′-untranslated region, the core protein-encoding sequence, the E1 protein-encoding sequence, the E2 protein-encoding sequence, and the p7 protein-encoding sequence of the J6CF strain the hepatitis C virus (HCV); and (ii) the NS2 protein-encoding sequence, the NS3 protein-encoding sequence, the NS4A protein-encoding sequence, the NS4B protein-encoding sequence, the NS5A protein-encoding sequence, the NS5B protein-encoding sequence, and the 3′-untranslated region of the JFH-1 strain.

摘要翻译： 本发明的反对是提供抑制丙型肝炎病毒（HCV）感染的抗体。 为此，本发明提供一种抗体，其识别从丙型肝炎病毒（HCV）基因组获得的丙型肝炎病毒（HCV）颗粒，其包含以下（i）和（ii）作为抗原彼此连接并具有抑制性 丙型肝炎病毒（HCV）感染活动：（i）（a）5'非翻译区，核心蛋白编码序列，编码E1蛋白的序列，E2蛋白编码序列和p7蛋白 - 丙型肝炎病毒（HCV）的JFH-1株的编码序列或（b）5'-非翻译区，核心蛋白编码序列，E1蛋白编码序列，E2蛋白编码序列和 J6CF株丙型肝炎病毒（HCV）的p7蛋白编码序列; 和（ii）NS2蛋白编码序列，编码NS3蛋白的序列，NS4A蛋白编码序列，NS4B蛋白编码序列，NS5A蛋白编码序列，NS5B蛋白编码序列和3' JFH-1株的非翻译区。