Semiconductor light-emitting device
    1.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号:US07569866B2

    公开(公告)日:2009-08-04

    申请号:US11497379

    申请日:2006-08-02

    IPC分类号: H01L33/00

    CPC分类号: H01L33/14 H01L33/30

    摘要: A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.

    摘要翻译: 一种半导体发光器件,具有:形成在半导体衬底上的发光部分,所述发光部分具有n型覆盖层,有源层和p型覆盖层; 形成在发光部分上的As基接触层,所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层,所述电流扩散层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。 缓冲层为未掺杂的III / V族III族半导体,III / V族半导体为具有P(磷)作为主要成分的V族元素。

    Semiconductor light emitting element
    2.
    发明授权
    Semiconductor light emitting element 失效
    半导体发光元件

    公开(公告)号:US07449722B2

    公开(公告)日:2008-11-11

    申请号:US11285388

    申请日:2005-11-23

    IPC分类号: H01L33/00

    摘要: A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.

    摘要翻译: 半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层,未掺杂的有源层,第二导电型覆盖层和第二导电型电流扩展层。 第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层,该部分不与有源层接触。 第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

    Semiconductor light emitting device
    3.
    发明申请
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US20060220032A1

    公开(公告)日:2006-10-05

    申请号:US11165568

    申请日:2005-06-24

    IPC分类号: H01L33/00

    CPC分类号: H01L33/02 H01L33/14 H01L33/30

    摘要: A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III-V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.

    摘要翻译: 半导体发光器件具有:半导体衬底; 具有n型包覆层,有源层,p型覆层和p型接触层的半导体层,其中p型接触层由基于As的材料制成,位于 半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。 扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3%以内的晶格失配比的III-V族半导体制成。

    Light emitting device and method for fabricating the same including a back surface electrode with an Au alloy
    4.
    发明授权
    Light emitting device and method for fabricating the same including a back surface electrode with an Au alloy 有权
    发光元件及其制造方法,其包括具有Au合金的背面电极

    公开(公告)号:US07884381B2

    公开(公告)日:2011-02-08

    申请号:US12461008

    申请日:2009-07-29

    摘要: A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

    摘要翻译: 发光器件包括具有第一导电类型的第一半导体层,第二导电类型的第二半导体层和有源层的半导体多层结构。 反射层设置在半导体多层结构的一个表面的一侧,并且反射从有源层发射的光。 在反射层的相对于半导体多层结构侧的相反侧设置有Si或Ge的支撑基板,并且经由金属接合层支撑半导体多层结构。 背面电极相对于金属接合层的一侧设置在支撑基板的相对侧,并且包括与支撑基板合金化的Au。 背面电极的硬度高于Au的硬度。

    Semiconductor light emitting device
    5.
    发明申请
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号:US20080093612A1

    公开(公告)日:2008-04-24

    申请号:US11907976

    申请日:2007-10-19

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22 H01L33/405

    摘要: A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.

    摘要翻译: 在半导体发光器件中形成包括有源层6和光提取层4的多个半导体层以及反射金属膜11。 光提取层4由具有不同组成比的多个层23,24形成。 在包括最外层的层23,24上形成凹凸22,以提供作为粗糙表面的主表面S.

    Semiconductor light-emitting device
    6.
    发明申请
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号:US20070075328A1

    公开(公告)日:2007-04-05

    申请号:US11511220

    申请日:2006-08-29

    IPC分类号: H01L33/00

    摘要: A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.

    摘要翻译: 半导体发光器件具有半导体衬底,n型覆层,有源层,p型覆层,p型缓冲层,p型接触层和电流扩展层。 一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下的低Mg浓度缓冲层,膜厚为 50nm以上。

    Semiconductor light-emitting device
    7.
    发明申请
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号:US20070075327A1

    公开(公告)日:2007-04-05

    申请号:US11485420

    申请日:2006-07-13

    IPC分类号: H01L33/00

    CPC分类号: H01L33/14 H01L33/30

    摘要: A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.

    摘要翻译: 半导体发光器件具有形成在半导体衬底上的发光部分,形成在其上的As型p型接触层,在其上形成金属氧化物材料的电流扩散层,以及形成在p型接触层之间的缓冲层, 型包覆层和p型接触层。 缓冲层具有p型导电性的III / V族半导体,有意或不可避免地含有氢或碳,缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L, 型接触层。

    Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode
    9.
    发明授权
    Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode 有权
    发光元件包括从中心电极的周边延伸的中心电极和细线电极

    公开(公告)号:US08237180B2

    公开(公告)日:2012-08-07

    申请号:US12656176

    申请日:2010-01-20

    IPC分类号: H01L27/15

    摘要: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region.

    摘要翻译: 发光元件包括半导体层叠结构,包括第一导电类型的第一半导体层,不同于第一导电类型的第二导电类型的第二半导体层和夹在第一半导体层和第二半导体层之间的有源层, 包括设置在半导体层叠结构的一个表面上的中心电极的表面电极和从中心电极的周边延伸的细线电极,以及设置在半导体叠层结构的另一表面的一部分上的接触部分,其挤出位于 在细线电极的正下方,与细线电极并联,并且包括形成细线电极与允许多个第一区域连接的第二区域之间的最短电流通路的多个第一区域。 表面电极具有这样的布置:中心电极和接触部分之间的最短电流通路比细线电极和第一区域之间的最短电流通路长,并且细线电极端部之间的最短电流通路 并且接触部分不小于细线电极和第一区域之间的最短电流通路。

    Light-emitting element
    10.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号:US08120046B2

    公开(公告)日:2012-02-21

    申请号:US12585827

    申请日:2009-09-25

    IPC分类号: H01L33/00

    摘要: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.

    摘要翻译: 发光元件包括半导体叠层结构,其包括第一导电类型的第一半导体层,不同于第一导电类型的第二导电类型的第二半导体层和由第一和第二半导体层夹持的有源层, 在半导体层叠结构的一个表面侧的第一电极,在用于反射从有源层发射的光的半导体层叠结构的另一个表面侧上的导电反射层,部分地形成在半导体层叠结构和导电反射层之间的接触部 并且与半导体层叠结构欧姆接触,并且在半导体层叠结构上的导电反射层的一部分表面上的第二电极,而不接触用于将电流馈送到接触部分的半导体层叠结构。