摘要:
A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.
摘要:
A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.
摘要:
A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III-V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
摘要翻译:半导体发光器件具有:半导体衬底; 具有n型包覆层,有源层,p型覆层和p型接触层的半导体层,其中p型接触层由基于As的材料制成,位于 半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。 扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3%以内的晶格失配比的III-V族半导体制成。
摘要:
A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.
摘要:
A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
摘要:
A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.
摘要翻译:半导体发光器件具有半导体衬底,n型覆层,有源层,p型覆层,p型缓冲层,p型接触层和电流扩展层。 一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下的低Mg浓度缓冲层,膜厚为 50nm以上。
摘要:
A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.
摘要:
A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.
摘要翻译:半导体发光器件具有半导体衬底,n型覆层,有源层,p型覆层,p型缓冲层,p型接触层和电流扩展层。 一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下,膜厚为50nm以上的低Mg浓度缓冲层。
摘要:
A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region.
摘要:
A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.