Method of fabricating mask ROM using junction isolation
    1.
    发明授权
    Method of fabricating mask ROM using junction isolation 失效
    使用结隔离制造掩模ROM的方法

    公开(公告)号:US5891780A

    公开(公告)日:1999-04-06

    申请号:US827058

    申请日:1997-03-26

    摘要: A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power supply voltage, whereby the adjacent transistors are isolated from each other.

    摘要翻译: 半导体器件包括形成有至少一个含有第一导电类型或第二导电类型的杂质离子的阱的半导体衬底; 多个晶体管,每个具有形成在阱上的栅极绝缘膜,形成在栅极绝缘膜上的栅电极和形成在阱中的一对扩散层; 以及与阱的导电类型相同的外部扩散层,并且在其内部的外周中与每个扩散层自对准; 外部扩散层的杂质浓度足以提供期望的结合耐受电压,并且当对相应的晶体管施加工作电压时,具有与要产生的耗尽层基本相同的宽度; 阱的杂质被设定为使得出现在连接相邻晶体管的栅极下方的寄生晶体管的阈值电压高于电源电压,由此相邻的晶体管彼此隔离。

    Semiconductor device with outer diffusion layer
    2.
    发明授权
    Semiconductor device with outer diffusion layer 失效
    具有外扩散层的半导体器件

    公开(公告)号:US5648672A

    公开(公告)日:1997-07-15

    申请号:US529977

    申请日:1995-09-19

    摘要: A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power supply voltage, whereby the adjacent transistors are isolated from each other.

    摘要翻译: 半导体器件包括形成有至少一个含有第一导电类型或第二导电类型的杂质离子的阱的半导体衬底; 多个晶体管,每个具有形成在阱上的栅极绝缘膜,形成在栅极绝缘膜上的栅电极和形成在阱中的一对扩散层; 以及与阱的导电类型相同的外部扩散层,并且在其内部的外周中与每个扩散层自对准; 外部扩散层的杂质浓度足以提供期望的结合耐受电压,并且当对相应的晶体管施加工作电压时,具有与要产生的耗尽层基本相同的宽度; 阱的杂质被设定为使得出现在连接相邻晶体管的栅极下方的寄生晶体管的阈值电压高于电源电压,由此相邻的晶体管彼此隔离。

    Image formation apparatus utilizing density of waste toner to detect amount thereof
    3.
    发明授权
    Image formation apparatus utilizing density of waste toner to detect amount thereof 有权
    图像形成装置利用废调色剂的密度来检测其量

    公开(公告)号:US07660541B2

    公开(公告)日:2010-02-09

    申请号:US11984195

    申请日:2007-11-14

    IPC分类号: G03G21/12

    CPC分类号: G03G21/12

    摘要: An image formation apparatus has a waste toner accommodation unit including a toner transporting rotation member covered with a fixed pipe. As the member rotates, waste toner in the pipe is transported downstream. The toner transporting rotation member has an upstream portion with a recessed portion having a small diameter. As the toner transporting rotation member rotates, a detection plate located external to the waste toner accommodation unit repetitively moves and thus repetitively passes across a photo sensor. When the waste toner has reached the level of the pipe the waste toner is compressed in the pipe downstream and thus increases in density. This increases a load torque of the toner transporting rotation member and hence ruptures the recessed portion, and thus stops rotation. The photo sensor detects that the detection plate no longer passes across it, and thus detects a state full of toner.

    摘要翻译: 图像形成装置具有废墨调色剂容纳单元,其包括用固定管覆盖的调色剂输送旋转部件。 当构件旋转时,管道中的废粉末被运送到下游。 调色剂传送旋转部件具有具有小直径的凹部的上游部分。 当调色剂传送旋转构件旋转时,位于废调色剂容纳单元外部的检测板重复地移动并因此重复地穿过光传感器。 当废粉末已经达到管道的高度时,废粉末在管道下游被压缩,因此密度增加。 这增加了调色剂传送旋转部件的负载扭矩,从而使凹部破裂,从而停止旋转。 光传感器检测到检测板不再穿过它,从而检测到充满墨粉的状态。

    Pattern recognizing method and apparatus
    4.
    发明申请
    Pattern recognizing method and apparatus 审中-公开
    模式识别方法和装置

    公开(公告)号:US20060110029A1

    公开(公告)日:2006-05-25

    申请号:US11205011

    申请日:2005-08-17

    IPC分类号: G06K9/62 G06K9/46

    CPC分类号: G06K9/00228

    摘要: A pattern recognizing method and apparatus are arranged to detect one or more objects with its own individuality belonging to the same category, such as a vehicle or a human's face, by using incremental signs in a manner to correspond with an apparent change caused by the posture variation of the object. For achieving the pattern detection corresponding with the apparent change caused by the posture variation of the object, the statistic quality of the incremental signs is extracted from a database having image data of the objects. The learning of a feature vector composed by using the quality makes it possible to design the most approximate identifier for detecting a pattern.

    摘要翻译: 图案识别方法和装置被配置为通过使用与由姿势引起的明显变化相对应的增量符号来检测具有属于相同类别的自身个性的一个或多个对象,例如车辆或人的脸部 对象的变化。 为了实现与由对象的姿势变化引起的明显变化相对应的模式检测,从具有对象的图像数据的数据库中提取增量符号的统计量。 通过使用质量组合的特征向量的学习使得可以设计用于检测图案的最近似的标识符。

    Semiconductor device for display control
    6.
    发明授权
    Semiconductor device for display control 失效
    用于显示控制的半导体器件

    公开(公告)号:US06535214B1

    公开(公告)日:2003-03-18

    申请号:US09534128

    申请日:2000-03-23

    IPC分类号: G06T1100

    CPC分类号: G09G5/246 G09G5/42

    摘要: A semiconductor device for display control includes an input section for receiving a display information including a character code, a display position information and a character size information, a first address generating section for generating a first address group corresponding to the received character code by applying a predetermined conversion rule to the received character code and character size information, a font data storing section for outputting the font data stored in the region specified by the first address group when the first address group is given, a second address generating section for generating a second address group by utilizing the received display position information, the second address group representing a region where the font data is to be expanded, a font data expanding section for expanding and temporarily storing the font data in the region represented by the second address group, and an output section for outputting the font data to an external display driving unit.

    摘要翻译: 一种用于显示控制的半导体器件包括用于接收包括字符代码,显示位置信息和字符尺寸信息的显示信息的输入部分,用于通过应用一个或多个第一地址生成部分生成与所接收到的字符代码相对应的第一地址组 对所接收的字符代码和字符尺寸信息的预定转换规则;字体数据存储部分,用于当给定第一地址组时,输出存储在由第一地址组指定的区域中的字体数据;第二地址产生部分, 通过利用所接收的显示位置信息的地址组,表示要扩展字体数据的区域的第二地址组,用于在由第二地址组表示的区域中扩展和临时存储字体数据的字体数据扩展部分,以及 用于将字体数据输出到外部位移的输出部分 ay驱动单位。

    Semiconductor device and fabrication process therefor
    7.
    发明授权
    Semiconductor device and fabrication process therefor 失效
    半导体器件及其制造工艺

    公开(公告)号:US5949111A

    公开(公告)日:1999-09-07

    申请号:US966569

    申请日:1997-11-10

    摘要: A semiconductor device formed on a semiconductor substrate; includes diffusion layers for source and drain regions formed in a surface portion of the semiconductor substrate. A gate electrode is formed on the semiconductor substrate with an intervening gate insulation film. An interlayer insulation film is formed on the gate electrode, and an interconnection layer is formed on the interlayer insulation film. The gate electrode is formed on at least a portion of the source and drain regions and on a channel region located between the source and drain regions. The gate electrode is electrically connected to the interconnection layer via a contact hole formed in the interlayer insulation film on the gate electrode.

    摘要翻译: 形成在半导体衬底上的半导体器件; 包括形成在半导体衬底的表面部分中的源区和漏区的扩散层。 在半导体衬底上形成有栅极绝缘膜。 在栅电极上形成层间绝缘膜,在层间绝缘膜上形成互连层。 栅电极形成在源极和漏极区域的至少一部分上以及位于源极和漏极区域之间的沟道区域上。 栅电极通过形成在栅电极上的层间绝缘膜中的接触孔电连接到互连层。

    Constant CMOS delay circuit
    8.
    发明授权
    Constant CMOS delay circuit 失效
    恒定CMOS延迟电路

    公开(公告)号:US5453709A

    公开(公告)日:1995-09-26

    申请号:US236132

    申请日:1994-05-02

    CPC分类号: H03K5/133

    摘要: A delay circuit comprises first modified inverter circuits, a first compensating circuit, second modified inverter circuits and second compensating circuit. Each first modified inverter circuit is composed of a CMOS inverter and an additional NMOS transistor. The CMOS inverter has an NMOS and a PMOS transistor connected in complementary connection between a positive power supply and ground. The additional NMOS transistor controls the current from the first modified inverter circuit to the ground. The first compensating circuit is connected to the gate of each additional NMOS transistor to supply an output signal for compensating a change in characteristic of the additional NMOS transistors. Each second modified inverter circuit is composed of a CMOS inverter and an additional PMOS transistor. The additional PMOS transistor controls a current from the second modified inverter circuit to the positive power supply. The second compensating circuit is connected to the gate of each additional PMOS transistor to supply an output signal for compensating a change in characteristic of the additional PMOS transistors. The first modified inverter circuits and the second inverter circuits are connected to each other to provide an output signal from the delay circuit which is delayed relative to an input signal into the delay circuit. The delay circuit may have a constant delay time event with variations in MOS transistor characteristic (Vth) and in ambient temperature.

    摘要翻译: 延迟电路包括第一修正逆变器电路,第一补偿电路,第二修正逆变器电路和第二补偿电路。 每个第一修改的反相器电路由CMOS反相器和附加的NMOS晶体管组成。 CMOS反相器具有在正电源和地之间互补连接的NMOS和PMOS晶体管。 附加的NMOS晶体管控制从第一修改的逆变器电路到地的电流。 第一补偿电路连接到每个附加NMOS晶体管的栅极,以提供用于补偿附加NMOS晶体管的特性变化的输出信号。 每个第二修改的反相器电路由CMOS反相器和附加PMOS晶体管组成。 附加PMOS晶体管控制从第二修正逆变器电路到正电源的电流。 第二补偿电路连接到每个附加PMOS晶体管的栅极,以提供用于补偿附加PMOS晶体管的特性变化的输出信号。 第一修改逆变器电路和第二反相器电路彼此连接,以提供来自延迟电路的输出信号,延迟电路相对于延迟电路的输入信号被延迟。 延迟电路可以具有在MOS晶体管特性(Vth)和环境温度下变化的恒定的延迟时间事件。

    Image formation apparatus utilizing density of waste toner to detect amount thereof
    9.
    发明授权
    Image formation apparatus utilizing density of waste toner to detect amount thereof 有权
    图像形成装置利用废调色剂的密度来检测其量

    公开(公告)号:US07881626B2

    公开(公告)日:2011-02-01

    申请号:US11984196

    申请日:2007-11-14

    IPC分类号: G03G21/12

    CPC分类号: G03G21/12

    摘要: An image formation apparatus has a waste toner accommodation unit including a toner transporting rotation member covered with a fixed pipe. As the member rotates, waste toner in the pipe is transported downstream A fin involved in detecting an amount of toner moves upward and downward with a predetermined amplitude as the member rotates. The pipe has a projection secured by an elastic member to a bottom of the waste toner accommodation unit, and when waste toner reaches the level of the pipe, the waste toner is compressed in the pipe downstream and thus increases in density, and together with the waste toner the pipe starts to rotate. As a result, the projection rotates to a position allowing it to interfere with the fin, and the fin decreases in amplitude. Such variation in amplitude is detected by a sensor and a state full of toner is thus detected.

    摘要翻译: 图像形成装置具有废墨调色剂容纳单元,其包括用固定管覆盖的调色剂输送旋转部件。 当构件旋转时,管件中的废色调剂在下游传输,当构件旋转时,涉及检测调色剂量的调色剂以预定的幅度向上和向下移动。 该管具有通过弹性构件固定到废调色剂容纳单元的底部的突起,并且当废调色剂达到管的高度时,废调色剂在下游的管中被压缩,因此密度增加,并且与 废粉末管道开始旋转。 结果,突起旋转到允许其与翅片干涉的位置,并且翅片振幅减小。 由传感器检测振幅的这种变化,从而检测到充满调色剂的状态。

    Image forming apparatus having a heat-discharging rotary-type development unit
    10.
    发明授权
    Image forming apparatus having a heat-discharging rotary-type development unit 有权
    具有放电旋转型显影单元的图像形成装置

    公开(公告)号:US07502573B2

    公开(公告)日:2009-03-10

    申请号:US11374007

    申请日:2006-03-14

    IPC分类号: G03G21/20

    CPC分类号: G03G21/206 G03G2221/1645

    摘要: An image forming apparatus according to the invention includes, in an apparatus body, an image carrier on which an electrostatic latent image is formed; and a rotary-type development unit being rotatable about an axis thereof and having a plurality of developing devices, which are used for developing the latent images formed on the image carrier. The rotary-type development unit is formed with cavities at an outer periphery thereof for receiving gas. The rotary-type development unit is rotated for sequentially advancing the gas in the cavities whereby the gas in the apparatus body is discharged out of the apparatus body.

    摘要翻译: 根据本发明的图像形成装置在装置主体中包括其上形成有静电潜像的图像载体; 以及旋转式显影单元,其可绕其轴线旋转并具有多个显影装置,用于显影形成在图像载体上的潜像。 旋转式显影单元在其外周形成有用于接收气体的空腔。 旋转式显影单元旋转以使空腔中的气体顺序前进,由此将装置主体中的气体排出装置主体。