摘要:
A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power supply voltage, whereby the adjacent transistors are isolated from each other.
摘要:
A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power supply voltage, whereby the adjacent transistors are isolated from each other.
摘要:
An image formation apparatus has a waste toner accommodation unit including a toner transporting rotation member covered with a fixed pipe. As the member rotates, waste toner in the pipe is transported downstream. The toner transporting rotation member has an upstream portion with a recessed portion having a small diameter. As the toner transporting rotation member rotates, a detection plate located external to the waste toner accommodation unit repetitively moves and thus repetitively passes across a photo sensor. When the waste toner has reached the level of the pipe the waste toner is compressed in the pipe downstream and thus increases in density. This increases a load torque of the toner transporting rotation member and hence ruptures the recessed portion, and thus stops rotation. The photo sensor detects that the detection plate no longer passes across it, and thus detects a state full of toner.
摘要:
A pattern recognizing method and apparatus are arranged to detect one or more objects with its own individuality belonging to the same category, such as a vehicle or a human's face, by using incremental signs in a manner to correspond with an apparent change caused by the posture variation of the object. For achieving the pattern detection corresponding with the apparent change caused by the posture variation of the object, the statistic quality of the incremental signs is extracted from a database having image data of the objects. The learning of a feature vector composed by using the quality makes it possible to design the most approximate identifier for detecting a pattern.
摘要:
There is provided a development cartridge capable of switching development colors in a plurality of development cartridges without using development rack. A development cartridge of the present invention has a part of a drive member for switching development colors.
摘要:
A semiconductor device for display control includes an input section for receiving a display information including a character code, a display position information and a character size information, a first address generating section for generating a first address group corresponding to the received character code by applying a predetermined conversion rule to the received character code and character size information, a font data storing section for outputting the font data stored in the region specified by the first address group when the first address group is given, a second address generating section for generating a second address group by utilizing the received display position information, the second address group representing a region where the font data is to be expanded, a font data expanding section for expanding and temporarily storing the font data in the region represented by the second address group, and an output section for outputting the font data to an external display driving unit.
摘要:
A semiconductor device formed on a semiconductor substrate; includes diffusion layers for source and drain regions formed in a surface portion of the semiconductor substrate. A gate electrode is formed on the semiconductor substrate with an intervening gate insulation film. An interlayer insulation film is formed on the gate electrode, and an interconnection layer is formed on the interlayer insulation film. The gate electrode is formed on at least a portion of the source and drain regions and on a channel region located between the source and drain regions. The gate electrode is electrically connected to the interconnection layer via a contact hole formed in the interlayer insulation film on the gate electrode.
摘要:
A delay circuit comprises first modified inverter circuits, a first compensating circuit, second modified inverter circuits and second compensating circuit. Each first modified inverter circuit is composed of a CMOS inverter and an additional NMOS transistor. The CMOS inverter has an NMOS and a PMOS transistor connected in complementary connection between a positive power supply and ground. The additional NMOS transistor controls the current from the first modified inverter circuit to the ground. The first compensating circuit is connected to the gate of each additional NMOS transistor to supply an output signal for compensating a change in characteristic of the additional NMOS transistors. Each second modified inverter circuit is composed of a CMOS inverter and an additional PMOS transistor. The additional PMOS transistor controls a current from the second modified inverter circuit to the positive power supply. The second compensating circuit is connected to the gate of each additional PMOS transistor to supply an output signal for compensating a change in characteristic of the additional PMOS transistors. The first modified inverter circuits and the second inverter circuits are connected to each other to provide an output signal from the delay circuit which is delayed relative to an input signal into the delay circuit. The delay circuit may have a constant delay time event with variations in MOS transistor characteristic (Vth) and in ambient temperature.
摘要:
An image formation apparatus has a waste toner accommodation unit including a toner transporting rotation member covered with a fixed pipe. As the member rotates, waste toner in the pipe is transported downstream A fin involved in detecting an amount of toner moves upward and downward with a predetermined amplitude as the member rotates. The pipe has a projection secured by an elastic member to a bottom of the waste toner accommodation unit, and when waste toner reaches the level of the pipe, the waste toner is compressed in the pipe downstream and thus increases in density, and together with the waste toner the pipe starts to rotate. As a result, the projection rotates to a position allowing it to interfere with the fin, and the fin decreases in amplitude. Such variation in amplitude is detected by a sensor and a state full of toner is thus detected.
摘要:
An image forming apparatus according to the invention includes, in an apparatus body, an image carrier on which an electrostatic latent image is formed; and a rotary-type development unit being rotatable about an axis thereof and having a plurality of developing devices, which are used for developing the latent images formed on the image carrier. The rotary-type development unit is formed with cavities at an outer periphery thereof for receiving gas. The rotary-type development unit is rotated for sequentially advancing the gas in the cavities whereby the gas in the apparatus body is discharged out of the apparatus body.