公开(公告)号：US08221941B2

公开(公告)日：2012-07-17

申请号：US12647808

申请日：2009-12-28

申请人： Toshiyuki Suzuki ,  Masahiro Hashimoto ,  Kazunori Ono ,  Ryo Ohkubo ,  Kazuya Sakai

发明人： Toshiyuki Suzuki ,  Masahiro Hashimoto ,  Kazunori Ono ,  Ryo Ohkubo ,  Kazuya Sakai

IPC分类号： G03F1/22

CPC分类号： G03F1/32

摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.

摘要翻译： 在透光性基板上形成由含有金属和硅的材料构成的薄膜。 然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时， 薄膜图案的转印特性不会超过预定的程度。 该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。

公开(公告)号：US20110217635A1

公开(公告)日：2011-09-08

申请号：US13122680

申请日：2010-10-08

申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  G03F1/82

摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.

摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

公开(公告)号：US08658334B2

公开(公告)日：2014-02-25

申请号：US13501348

申请日：2010-10-08

申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

IPC分类号： G03F1/50 ,  B08B3/00

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.

摘要翻译： 提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。 图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

公开(公告)号：US20120251931A1

公开(公告)日：2012-10-04

申请号：US13501348

申请日：2010-10-08

申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

IPC分类号： G03F1/00 ,  G03F7/20 ,  G03F1/76 ,  G03F1/46 ,  G03F1/26

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.

摘要翻译： 提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。 图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

公开(公告)号：US08197993B2

公开(公告)日：2012-06-12

申请号：US13122680

申请日：2010-10-08

申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

IPC分类号： G03F1/00 ,  B08B3/00

CPC分类号： G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  G03F1/82

摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.

摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

公开(公告)号：US08785086B2

公开(公告)日：2014-07-22

申请号：US13812627

申请日：2011-07-29

申请人： Masahiro Hashimoto ,  Kazunori Ono ,  Kenta Tsukagoshi ,  Tooru Fukui

发明人： Masahiro Hashimoto ,  Kazunori Ono ,  Kenta Tsukagoshi ,  Tooru Fukui

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  Y10S430/143

摘要： To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.

摘要翻译： 为了解决由于反向散射引起的累积能量的降低的问题，导致当在通常使用的高对比度抗蚀剂用于制造反射掩模时引起的CD线性的降低。 用于制造反射掩模的反射掩模坯料包括基板，形成在基板上并适于反射曝光光的多层反射膜，以及形成在多层反射膜上并适于吸收曝光光的吸收膜。 在吸收膜上形成用于电子束写入的抗蚀剂膜，并且用于电子束写入的抗蚀剂膜的对比度值γ为30或更小。

公开(公告)号：US20130122407A1

公开(公告)日：2013-05-16

申请号：US13812627

申请日：2011-07-29

申请人： Masahiro Hashimoto ,  Kazunori Ono ,  Kenta Tsukagoshi ,  Tooru Fukui

发明人： Masahiro Hashimoto ,  Kazunori Ono ,  Kenta Tsukagoshi ,  Tooru Fukui

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  Y10S430/143

摘要： To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.

摘要翻译： 为了解决由于反向散射引起的累积能量的降低的问题，导致当在通常使用的高对比度抗蚀剂用于制造反射掩模时引起的CD线性的降低。 用于制造反射掩模的反射掩模坯料包括基板，形成在基板上并适于反射曝光光的多层反射膜，以及形成在多层反射膜上并适于吸收曝光光的吸收膜。 在吸收膜上形成用于电子束写入的抗蚀剂膜，并且用于电子束写入的抗蚀剂膜的对比度值γ为30以下。

公开(公告)号：US07281417B2

公开(公告)日：2007-10-16

申请号：US10411234

申请日：2003-04-10

申请人： Hiroshi Saegusa ,  Kazunori Ono

发明人： Hiroshi Saegusa ,  Kazunori Ono

IPC分类号： A63C53/00 ,  A63B53/00

CPC分类号： A63B60/42 ,  A63B53/04 ,  A63B53/0466 ,  A63B2060/002

摘要： Evaluation of the durability or the coefficient of restitution of a golf club head 1 is performed by measuring a response signal of an impact surface 10 of a golf club head 1 when imparting a vibration to the impact surface 10, finding a value of the peak frequency of the first resonance frequency or the like located within a predetermined frequency range of the measured response signal, and finding the ratio of this peak frequency value with respect to a reference value. Further, control of the quality of the restitution characteristics in a initial state, or quality of the golf club head that deteriorates over time, is conducted by utilizing the evaluation results. The golf club head 1 is provided with a label 12 for displaying the peak frequency measured immediately after manufacture as an initial value. Further, in manufacturing a golf club, the quality of the golf club head immediately after manufacture is controlled by the peak frequency.

摘要翻译： 高尔夫球杆头1的耐久性或恢复系数的评估是通过测量高尔夫球杆头1的冲击表面10的响应信号，当向冲击表面10施加振动时，发现峰值频率 位于所测量的响应信号的预定频率范围内的第一共振频率等，以及找到该峰值频率值相对于参考值的比率。 此外，通过利用评价结果来控制初始状态下的恢复特性的质量或高尔夫球杆头的质量随着时间变差而劣化。 高尔夫球杆头1设置有用于将制造后立即测量的峰值频率显示为初始值的标签12。 此外，在制造高尔夫球杆时，立即制造后的高尔夫球杆头的质量由峰值频率控制。

公开(公告)号：US07162913B2

公开(公告)日：2007-01-16

申请号：US10187891

申请日：2002-07-03

申请人： Hiroshi Saegusa ,  Kazunori Ono

发明人： Hiroshi Saegusa ,  Kazunori Ono

IPC分类号： G01L5/00 ,  A63B53/00

CPC分类号： G01N29/46 ,  A63B53/04 ,  A63B53/0466 ,  A63B60/42 ,  A63B2060/002 ,  G01N29/045

摘要： A method of evaluating restitution characteristics of a golf club head, a system for evaluating the restitution characteristics and a golf club, are provided in which a coefficient of restitution of a golf club head is inferred and obtained without disassembling the golf club by removing the golf club head away from a shaft and the coefficient of restitution may extremely easily be obtained for a short period of time. At first, an external force to a striking face of the golf club head is imparted to perform impact vibration. A response signal of the striking face under the impact vibration is acquired to obtain a resonant frequency of the striking face. A coefficient of restitution is calculated from the resonant frequency when the golf ball is struck by the striking face, whereby restitution characteristics of the golf club head are inferred and evaluated.

摘要翻译： 提供了一种评估高尔夫球杆头的恢复特性的方法，用于评估恢复特性的系统和高尔夫球杆，其中通过移除高尔夫球杆来推断和获得高尔夫球杆头的恢复系数而不拆卸高尔夫球杆 球杆头远离轴，并且在短时间内可以非常容易地获得恢复系数。 首先，赋予高尔夫球杆头的击打面的外力进行冲击振动。 获取冲击振动下的打击面的响应信号，以获得击打面的共振频率。 当高尔夫球被击打面撞击时，从谐振频率计算恢复系数，由此推断和评估高尔夫球杆头的恢复特性。

公开(公告)号：US08050370B2

公开(公告)日：2011-11-01

申请号：US12270394

申请日：2008-11-13

申请人： Tomohiro Yamamoto ,  Akira Furuhashi ,  Takahiro Horie ,  Yuichi Murakami ,  Kazunori Ono ,  Frederic Coutant ,  Tarik Aouine

发明人： Tomohiro Yamamoto ,  Akira Furuhashi ,  Takahiro Horie ,  Yuichi Murakami ,  Kazunori Ono ,  Frederic Coutant ,  Tarik Aouine

IPC分类号： H04B1/10

CPC分类号： H04B1/123

摘要： A digital signal receiving apparatus includes a detection-judging portion having a first smoothing filter generating a first smoothed signal by smoothing an auto-correlation signal and judging a possible presence of a desired signal when a signal level of the first smoothed signal is greater than a reference level and an absence of the desired signal when being smaller than the reference level. The smoothing filter includes a limiting portion limiting a fluctuation width of the first smoothed signal; and an adjusting portion configured to adjust the fluctuation width of the first smoothed signal limited by the limiting portion to be reduced while an elapsing time after the detection-judging means judges the possible presence of the desired signal is increasing.

摘要翻译： 一种数字信号接收装置，包括具有第一平滑滤波器的检测判断部分，该第一平滑滤波器通过平滑自相关信号产生第一平滑信号，并且当第一平滑信号的信号电平大于一个信号时判断期望信号的可能存在 参考电平和当小于参考电平时缺少所需信号。 平滑滤波器包括限制第一平滑信号的波动宽度的限制部分; 以及调整部，其被配置为在检测判断装置判断出所需信号的可能存在之后的经过时间时，调整受限制部分限制的第一平滑信号的波动宽度的减小。