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132 条记录 (耗时 0.028 秒)

    Photoelectric conversion apparatus and image sensing system
    1.
    发明授权
    Photoelectric conversion apparatus and image sensing system 有权
    光电转换装置及影像感应系统

    公开(公告)号：US09293493B2

    公开(公告)日：2016-03-22

    申请号：US13364230

    申请日：2012-02-01

    申请人： Masahiro Kobayashi ,  Masaki Kurihara ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Taro Kato ,  Genzo Momma

    发明人： Masahiro Kobayashi ,  Masaki Kurihara ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Taro Kato ,  Genzo Momma

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14629 ,  H01L27/14623 ,  H01L27/14627

    摘要： A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.

    摘要翻译： 一种光电转换装置至少包括绝缘膜，多个高折射率元件，被设置为分别对应于各个光电转换部分，被绝缘膜围绕并具有高于折射率的折射率 绝缘膜和设置在所述绝缘膜上的高折射率膜，以便将所述多个高折射率元件彼此连接并且具有高于所述绝缘膜的折射率的折射率，以及透镜部分 在彼此相邻的多个透镜部中彼此相邻放置。

    PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM
    2.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM 有权
    光电转换装置和图像传感系统

    公开(公告)号：US20120200728A1

    公开(公告)日：2012-08-09

    申请号：US13364230

    申请日：2012-02-01

    申请人： Masahiro Kobayashi ,  Masaki Kurihara ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Taro Kato ,  Genzo Momma

    发明人： Masahiro Kobayashi ,  Masaki Kurihara ,  Takeshi Ichikawa ,  Yasuhiro Sekine ,  Mahito Shinohara ,  Taro Kato ,  Genzo Momma

    IPC分类号： H04N5/228 ,  H01L31/0232

    CPC分类号： H01L27/14629 ,  H01L27/14623 ,  H01L27/14627

    摘要： A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.

    摘要翻译： 一种光电转换装置至少包括绝缘膜，多个高折射率元件，被设置为分别对应于各个光电转换部分，被绝缘膜围绕并具有高于折射率的折射率 绝缘膜和设置在所述绝缘膜上的高折射率膜，以便将所述多个高折射率元件彼此连接并且具有高于所述绝缘膜的折射率的折射率，以及透镜部分 在彼此相邻的多个透镜部中彼此相邻放置。

    Solid-state imaging apparatus
    7.
    发明授权
    Solid-state imaging apparatus 有权
    固态成像装置

    公开(公告)号：US09000343B2

    公开(公告)日：2015-04-07

    申请号：US13807002

    申请日：2011-06-23

    申请人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

    发明人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

    IPC分类号： H01L27/146 ,  H01L31/00

    CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469

    摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.

    摘要翻译： 固态摄像装置技术领域本发明涉及具有多个光电转换单元的第一基板和具有多个读出电路的第二基板的固体摄像装置。 第一基板设置有彼此电分离的多个第一导电图案，并且第二基板设置有彼此电分离的多个第二导电图案。 第一导电图案各自包括沿第一方向延伸的第一部分图案。 第二导电图案各自包括沿与第一方向不同的第二方向延伸的部分图案。 第一部分图案具有在第一方向上比第二方向上的长度长的长度。

    IMAGE SENSING DEVICE AND CAMERA
    9.
    发明申请
    IMAGE SENSING DEVICE AND CAMERA 有权
    图像传感装置和摄像机

    公开(公告)号：US20110242388A1

    公开(公告)日：2011-10-06

    申请号：US13139558

    申请日：2010-01-20

    申请人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    发明人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689 ,  H01L29/7833

    摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.

    摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。

    Image sensing device and camera
    10.
    发明授权
    Image sensing device and camera 有权
    影像传感装置及相机

    公开(公告)号：US08482646B2

    公开(公告)日：2013-07-09

    申请号：US13139558

    申请日：2010-01-20

    申请人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    发明人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    IPC分类号： H04N3/14 ,  H04N5/335 ,  C12Q1/68 ,  H01J40/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00

    CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689 ,  H01L29/7833

    摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.

    摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。