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公开(公告)号：US20110242388A1
公开(公告)日：2011-10-06
申请号：US13139558
申请日：2010-01-20
申请人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
发明人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。
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公开(公告)号：US08482646B2
公开(公告)日：2013-07-09
申请号：US13139558
申请日：2010-01-20
申请人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
发明人： Takanori Watanabe , Mineo Shimotsusa , Takeshi Ichikawa , Hajime Ikeda , Yasuhiro Sekine , Akira Ohtani , Takeshi Kojima
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。
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公开(公告)号：US08053272B2
公开(公告)日：2011-11-08
申请号：US12692804
申请日：2010-01-25
IPC分类号： H01L21/00
CPC分类号： H01L21/76895 , H01L27/14643 , H01L27/14689
摘要： A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：形成用于第一导电类型区域和第二导电类型区域的公共接触孔，在第一导电类型区域和第二导电类型区域中的至少一个中注入杂质， 并且通过在所述接触孔中填充导电材料形成共用接触插塞，其中在所述注入步骤中，在所述第一导电类型区域和所述第二导电类型区域中的至少一个中注入杂质，使得 第一导电型区域和共用接触插塞彼此进行欧姆接触，并且第二导电类型区域和共用接触插塞彼此进行欧姆接触。
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公开(公告)号：US20100203670A1
公开(公告)日：2010-08-12
申请号：US12692804
申请日：2010-01-25
IPC分类号： H01L21/768
CPC分类号： H01L21/76895 , H01L27/14643 , H01L27/14689
摘要： A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：形成用于第一导电类型区域和第二导电类型区域的公共接触孔，在第一导电类型区域和第二导电类型区域中的至少一个中注入杂质， 并且通过在所述接触孔中填充导电材料形成共用接触插塞，其中在所述注入步骤中，在所述第一导电类型区域和所述第二导电类型区域中的至少一个中注入杂质，使得 第一导电型区域和共用接触插塞彼此进行欧姆接触，并且第二导电类型区域和共用接触插塞彼此进行欧姆接触。
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公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。
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公开(公告)号：US20100203667A1
公开(公告)日：2010-08-12
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/18 , H01L21/265
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。
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公开(公告)号：US07393715B2
公开(公告)日：2008-07-01
申请号：US11275672
申请日：2006-01-24
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/1462 , H01L27/14627 , H01L27/14636 , H01L27/14685 , H01L27/14689
摘要： In an image pickup device, a step of forming an embedded plug includes a step of forming a connecting hole in the insulation film in which the embedded plug is to be formed, a metal layer deposition step of depositing a metal layer on the insulation film in which the connecting hole is formed, thereby covering an interior of the connecting hole and at least a part of an upper surface of the insulation film in a laminating direction thereof, and a metal layer removing step of polishing the upper surface of the insulation film on which the metal layer is deposited thereby removing the metal layer except for the interior of the connecting hole, an etch-back method performed on the embedded plug in at least an insulation film, and a chemical mechanical polishing method performed on the embedded plug in another insulation film.
摘要翻译： 在图像拾取装置中，形成嵌入式插头的步骤包括在要形成嵌入式插头的绝缘膜中形成连接孔的步骤，在绝缘膜上沉积金属层的金属层沉积步骤 所述连接孔形成，从而覆盖所述连接孔的内部和所述绝缘膜的层叠方向的上表面的至少一部分，以及金属层除去工序，对所述绝缘膜的上表面进行研磨 其中沉积金属层，从而除去连接孔内部的金属层，在至少绝缘膜上对嵌入式插塞执行的回蚀方法以及在嵌入式插头上执行的化学机械抛光方法 绝缘膜。
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公开(公告)号：US20080054226A1
公开(公告)日：2008-03-06
申请号：US11892463
申请日：2007-08-23
申请人： Masao Abe , Akira Ohtani , Kuniaki Ishibashi
发明人： Masao Abe , Akira Ohtani , Kuniaki Ishibashi
IPC分类号： H01B1/12
CPC分类号： H01M4/9008 , C08G73/0266 , C08L61/06 , C08L61/14 , C08L79/02 , H01M4/90 , H01M8/1004 , H01M8/1023 , H01M8/1039 , H01M8/106 , H01M2300/0082 , Y02P70/56 , C08L2666/16
摘要： The invention provides a fuel cell which comprises a solid polymer electrolyte sandwiched between a cathode to which an oxidizing agent gas is supplied and an anode to which a reducing agent gas is supplied, wherein at least one of the electrodes has an electroconductive organic polymer which has an oxidation-reduction function as an electrode catalyst. The invention further provides a fuel cell in which the electrode catalyst comprises a mixture of an electroconductive organic polymer and an inorganic oxidation-reduction catalyst, and has a higher output power.
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公开(公告)号：US07537711B2
公开(公告)日：2009-05-26
申请号：US11892463
申请日：2007-08-23
申请人： Masao Abe , Akira Ohtani , Kuniaki Ishibashi
发明人： Masao Abe , Akira Ohtani , Kuniaki Ishibashi
IPC分类号： H01B1/12
CPC分类号： H01M4/9008 , C08G73/0266 , C08L61/06 , C08L61/14 , C08L79/02 , H01M4/90 , H01M8/1004 , H01M8/1023 , H01M8/1039 , H01M8/106 , H01M2300/0082 , Y02P70/56 , C08L2666/16
摘要： The invention provides a fuel cell which comprises a solid polymer electrolyte sandwiched between a cathode to which an oxidizing agent gas is supplied and an anode to which a reducing agent gas is supplied, wherein at least one of the electrodes has an electroconductive organic polymer which has an oxidation-reduction function as an electrode catalyst. The invention further provides a fuel cell in which the electrode catalyst comprises a mixture of an electroconductive organic polymer and an inorganic oxidation-reduction catalyst, and has a higher output power.
摘要翻译： 本发明提供一种燃料电池，其包括夹在供给氧化剂气体的阴极和供给还原剂气体的阳极之间的固体聚合物电解质，其中至少一个电极具有导电有机聚合物，其具有 作为电极催化剂的氧化还原功能。 本发明还提供了一种燃料电池，其中电极催化剂包括导电有机聚合物和无机氧化还原催化剂的混合物，并具有较高的输出功率。
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公开(公告)号：US07468219B2
公开(公告)日：2008-12-23
申请号：US10149227
申请日：2000-12-04
申请人： Masao Abe , Akira Ohtani , Kuniaki Ishibashi
发明人： Masao Abe , Akira Ohtani , Kuniaki Ishibashi
CPC分类号： H01M4/9008 , C08G73/0266 , C08L61/06 , C08L61/14 , C08L79/02 , H01M4/90 , H01M8/1004 , H01M8/1023 , H01M8/1039 , H01M8/106 , H01M2300/0082 , Y02P70/56 , C08L2666/16
摘要： The invention provides a fuel cell which comprises a solid polymer electrolyte sandwiched between a cathode to which an oxidizing agent gas is supplied and an anode to which a reducing agent gas is supplied, wherein at least one of the electrodes has an electroconductive organic polymer which has an oxidation-reduction function as an electrode catalyst. The invention further provides a fuel cell in which the electrode catalyst comprises a mixture of an electroconductive organic polymer and an inorganic oxidation-reduction catalyst, and has a higher output power.
摘要翻译： 本发明提供一种燃料电池，其包括夹在供给氧化剂气体的阴极和供给还原剂气体的阳极之间的固体聚合物电解质，其中至少一个电极具有导电有机聚合物，其具有 作为电极催化剂的氧化还原功能。 本发明还提供了一种燃料电池，其中电极催化剂包括导电有机聚合物和无机氧化还原催化剂的混合物，并具有较高的输出功率。
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