Crystal unit having stacked structure
    1.
    发明授权
    Crystal unit having stacked structure 失效
    具有堆叠结构的水晶单元

    公开(公告)号:US07564177B2

    公开(公告)日:2009-07-21

    申请号:US11964403

    申请日:2007-12-26

    IPC分类号: H01L41/047 H01L41/053

    CPC分类号: H03H9/1035 H03H9/0595

    摘要: A stacked crystal unit includes: a first crystal plate in which a vibration member links to an outer circumferential frame portion, and a pair of extending electrode extends to the frame portion from excitation electrodes; and a second and third crystal plates which have a concave portion in an area opposite to the vibration member and whose open end surfaces are joined by direct bonding to both principal surfaces of the frame portion in the first crystal plate. The extending electrodes are electrically extended to an outer surface of at least one of the second and third crystal plates via electrode through-holes provided in the frame portion. The electrode through-hole includes: a first electrode through-hole penetrating through the frame portion from the principal surface of the frame portion where the extending electrode extends; and a second electrode through-hole provided in the second or third crystal plate.

    摘要翻译: 层叠晶体单元包括:第一晶体板,其中振动部件连接到外周框架部分,一对延伸电极从激励电极延伸到框架部分; 以及第二和第三晶体板,其在与振动部件相反的区域中具有凹部,并且其开口端面通过直接接合到第一晶体板的框架部分的两个主表面而接合。 延伸电极通过设置在框架部分中的电极通孔电延伸到第二和第三晶体板中的至少一个的外表面。 电极通孔包括:从延伸电极延伸的框架部分的主表面穿过框架部分的第一电极通孔; 以及设置在第二或第三晶体板中的第二电极通孔。

    CRYSTAL UNIT HAVING STACKED STRUCTURE
    2.
    发明申请
    CRYSTAL UNIT HAVING STACKED STRUCTURE 失效
    具有堆叠结构的水晶单元

    公开(公告)号:US20080150398A1

    公开(公告)日:2008-06-26

    申请号:US11964403

    申请日:2007-12-26

    IPC分类号: H01L41/02

    CPC分类号: H03H9/1035 H03H9/0595

    摘要: A stacked crystal unit includes: a first crystal plate in which a vibration member links to an outer circumferential frame portion, and a pair of extending electrode extends to the frame portion from excitation electrodes; and a second and third crystal plates which have a concave portion in an area opposite to the vibration member and whose open end surfaces are joined by direct bonding to both principal surfaces of the frame portion in the first crystal plate. The extending electrodes are electrically extended to an outer surface of at least one of the second and third crystal plates via electrode through-holes provided in the frame portion. The electrode through-hole includes: a first electrode through-hole penetrating through the frame portion from the principal surface of the frame portion where the extending electrode extends; and a second electrode through-hole provided in the second or third crystal plate.

    摘要翻译: 层叠晶体单元包括:第一晶体板,其中振动部件连接到外周框架部分,一对延伸电极从激励电极延伸到框架部分; 以及第二和第三晶体板,其在与振动部件相反的区域中具有凹部,并且其开口端面通过直接接合到第一晶体板的框架部分的两个主表面而接合。 延伸电极通过设置在框架部分中的电极通孔电延伸到第二和第三晶体板中的至少一个的外表面。 电极通孔包括:从延伸电极延伸的框架部分的主表面穿过框架部分的第一电极通孔; 以及设置在第二或第三晶体板中的第二电极通孔。

    Method of manufacturing thin quartz crystal wafer
    3.
    发明授权
    Method of manufacturing thin quartz crystal wafer 失效
    薄型石英晶片的制造方法

    公开(公告)号:US07174620B2

    公开(公告)日:2007-02-13

    申请号:US10746400

    申请日:2003-12-26

    IPC分类号: H04R31/00

    摘要: A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from the principal surface thereof to cause multiphoton phenomenon state, thereby breaking Si—O—Si bonds of quartz crystal in said region to form voids in said region, and (b) peeling said thin quartz crystal wafer from a body of said quartz crystal block along said voids. The above process is repeatedly performed on one quartz crystal block to peel off a plurality of thin quartz crystal wafers successively from the principal surface of the quartz crystal block. Each of the thin quartz crystal wafers is divided into individual quartz crystal blanks for making quartz crystal units.

    摘要翻译: 从由合成石英晶体切割并具有平坦主表面的石英晶体块制造薄晶体晶片的方法包括以下步骤:(a)将激光束会聚在所述石英晶体的区域 在其主表面的预定深度处阻挡以产生多光子现象状态,从而破坏所述区域中的石英晶体的Si-O-Si键,以在所述区域中形成空隙,并且(b)将所述薄的石英晶片从主体 的所述石英晶体块。 上述过程在一个石英晶体块上重复进行,从石英晶体块的主表面连续地剥离多个薄的石英晶片。 每个薄的石英晶片被分成用于制造石英晶体单元的单独的石英晶体空白。

    Tuning fork type crystal unit and bar type crystal unit
    4.
    发明授权
    Tuning fork type crystal unit and bar type crystal unit 失效
    调音叉式晶体单元和棒式晶体单元

    公开(公告)号:US06930440B2

    公开(公告)日:2005-08-16

    申请号:US10697489

    申请日:2003-10-30

    IPC分类号: H03H9/215 H03H9/19 H03H9/21

    CPC分类号: H03H9/21

    摘要: A tuning fork type quartz crystal unit has a base and a pair of arms extending from respective ends of the base in a crystallographic Y direction of quartz crystal. Each of the arms comprises a first crystal member and a second crystal member which extend in the Y direction. The first crystal member and the second crystal member are joined to each other in a crystallographic YZ plane by a direct bonding such that the first crystal member and the second crystal member have respective crystallographic X directions oriented away from each other and extending parallel to each other. Each of the arms has excitation electrodes disposed respectively on a pair of exposed surfaces thereof which lie in the YZ plane. The direct bonding comprises, for example, a siloxane bond by which the first crystal member and the second crystal member are joined to each other.

    摘要翻译: 音叉式石英晶体单元具有从石英晶体的Y方向的基底的两端延伸的基部和一对臂。 每个臂包括在Y方向上延伸的第一晶体构件和第二晶体构件。 第一晶体构件和第二晶体构件通过直接接合在晶体YZ平面中彼此接合,使得第一晶体构件和第二晶体构件具有彼此远离并且彼此平行延伸的各自的晶体X方向 。 每个臂具有分别设置在其位于YZ平面中的一对暴露表面上的激励电极。 直接键合包括例如第一晶体构件和第二晶体构件相互连接的硅氧烷键。