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公开(公告)号：US09663405B2
公开(公告)日：2017-05-30
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
IPC分类号： C04B35/453 , C01G15/00 , C04B35/626 , C23C14/08 , C23C14/34 , H01B1/08
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
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2.发明申请Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact 有权氧化物烧结紧凑型，其生产方法和用于生产氧化物烧结的原料粉末公开(公告)号：US20120103804A1
公开(公告)日：2012-05-03
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
摘要翻译： 由铟（In），镓（Ga），锌（Zn）和氧（O）制成并由式InxGayZnzOa表示的氧化物烧结体[其中x /（x + y）为0.2〜0.8，z /（x + y + z）为0.1〜0.5，a =（3/2）x +（3/2）y + z]，其中，所述氧化物烧结体中含有的挥发性杂质的浓度为20ppm以下。 提供了用于生产能够实现溅射靶的高致密化和低体积电阻的IGZO靶的技术，在生产过程中防止靶的膨胀和裂纹，使结节的产生最小化，抑制异常放电，并使能 DC溅射。
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3.发明授权Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide 有权复合氧化物的无定形膜，复合氧化物的结晶膜，所述膜的制造方法和复合氧化物的烧结体公开(公告)号：US08252206B2
公开(公告)日：2012-08-28
申请号：US12666306
申请日：2008-06-13
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/457 , C04B35/6262 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/77 , C23C14/3414 , C23C14/5806
摘要： Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mΩcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.
摘要翻译： 本发明提供一种非晶膜，其基本上由铟，锡，镁和氧组成，并且以Sn /（In + Sn + Mg）和镁的原子比为5〜15％，比例为0.1〜 基于与残留物为铟和氧的Mg /（In + Sn + Mg）的原子数比为2.0％，并且由于通过在温度下退火该膜而使膜结晶而导致膜电阻率为0.4mΩ/ 为260℃以下。 在平板显示器中用作显示电极等的非晶ITO薄膜通过溅射沉积而不加热基板而不需要在沉积期间加入水来获得。 该非晶ITO膜具有通过在260℃以下的退火而结晶化的特性，该温度不是这样高的温度，结晶后的电阻率低。 还提供了制造该膜的方法和用于制造该膜的烧结体。
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4.发明申请Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films 有权复合氧化物的烧结紧凑，无定形膜和结晶膜，以及制备膜的方法公开(公告)号：US20120319057A1
公开(公告)日：2012-12-20
申请号：US13592520
申请日：2012-08-23
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/6262 , C04B35/6263 , C04B35/62675 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3208 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/5806
摘要： An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.
摘要翻译： 包含铟，锡，钙和氧的非晶膜，其中锡以Sn /（In + Sn + Ca）原子数比为5〜15％，钙含量为0.1〜2.0的比例 基于Ca /（In + Sn + Ca）的原子数比，并且残留物是铟和氧。 膜可以在260℃以下的退火下进行结晶化，其中膜的电阻率为0.4mΩ/ cm以下。 以这种方式，在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热基板或在沉积期间加水来制成非晶ITO膜。 该ITO膜可以通过在低温退火而结晶，并且具有低电阻率。 提供制造这种膜和烧结体的方法。
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5.发明授权Sintered compact, amorphous film and crystalline film of composite oxide, and process for producing the films 有权复合氧化物的烧结体，无定形膜和结晶膜，以及膜的制造方法公开(公告)号：US08728358B2
公开(公告)日：2014-05-20
申请号：US13592520
申请日：2012-08-23
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/6262 , C04B35/6263 , C04B35/62675 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3208 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/5806
摘要： An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.
摘要翻译： 包含铟，锡，钙和氧的非晶膜，其中锡以Sn /（In + Sn + Ca）原子数比为5〜15％，钙含量为0.1〜2.0的比例 基于Ca /（In + Sn + Ca）的原子数比，并且残留物是铟和氧。 膜可以在260℃以下的退火下进行结晶化，其中膜的电阻率为0.4mΩ/ cm以下。 以这种方式，在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热基板或在沉积期间加水来制成非晶ITO膜。 该ITO膜可以通过在低温退火而结晶，并且具有低电阻率。 提供制造这种膜和烧结体的方法。
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6.发明授权Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film 有权复合氧化物的烧结体，复合氧化物的非晶膜，所述薄膜的制造方法，复合氧化物的结晶膜及其制造方法公开(公告)号：US08277694B2
公开(公告)日：2012-10-02
申请号：US12668216
申请日：2008-07-04
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/6262 , C04B35/6263 , C04B35/62675 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3208 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/5806
摘要： Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.
摘要翻译： 提供了基本上由铟，锡，钙和氧组成的非晶体膜，其中以Sn /（In + Sn + Ca）的原子数比为5〜15％的比率含有锡，以含有钙的比例 相对于Ca /（In + Sn + Ca）的原子数比为0.1〜2.0％，残留物为铟和氧。 通过在260℃以下的温度下进行退火，可以使膜进一步结晶化，其中电阻率为0.4mΩ/ cm 2以上。 在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热衬底或在沉积期间加水来制成非晶ITO膜。 该ITO膜的特征在于，通过在260℃以下的温度退火而结晶，其温度不高，结晶后电阻率低。 因此，本发明的目的在于提供一种制造这种膜的方法和用于制造这种膜的烧结体。
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7.发明申请Sintered Compact of Composite Oxide, Amorphous Film of Composite Oxide, Process for Producing said Film, Crystalline Film of Composite Oxide and Process for Producing said Film 有权复合氧化物的烧结体，复合氧化物的无定形膜，所述膜的制造方法，复合氧化物的结晶膜及其制造方法公开(公告)号：US20100140570A1
公开(公告)日：2010-06-10
申请号：US12668216
申请日：2008-07-04
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/6262 , C04B35/6263 , C04B35/62675 , C04B35/62695 , C04B35/63416 , C04B2235/3206 , C04B2235/3208 , C04B2235/3286 , C04B2235/3293 , C04B2235/5445 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/5806
摘要： Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.
摘要翻译： 提供了基本上由铟，锡，钙和氧组成的非晶体膜，其中锡以Sn /（In + Sn + Ca）的原子数比计为5〜15％的比例，以含有钙的比例 相对于Ca /（In + Sn + Ca）的原子数比为0.1〜2.0％，残留物为铟和氧。 通过在260℃以下的温度下进行退火，可以使膜进一步结晶化，其中电阻率为0.4mΩ/ cm 2以上。 在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热衬底或在沉积期间加水来制成非晶ITO膜。 该ITO膜的特征在于，通过在260℃以下的温度退火而结晶，其温度不高，结晶后电阻率低。 因此，本发明的目的在于提供一种制造这种膜的方法和用于制造这种膜的烧结体。
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