摘要:
The improvement of the invention consists in the use of a specific ether compound, e.g., diethyleneglycol monomethyl, monoethyl and monobutyl ethers, dipropyleneglycol monomethyl and monoethyl ethers, triethyleneglycol monomethyl and monoethyl ethers and tripropyleneglycol monomethyl ether, as a rinse solvent for a substrate from which the pattern photoresist layer has been removed with a remover solution in the photolithographic processing of semiconductor devices. The rinse solvent is free from the problems in the toxicity to human body and environment pollution relative to waste disposal as well as the danger of fire. The rinse solvent is versatile to be applicable to both of the negative- and positive-working photoresist compositions. Further advantages are obtained by adding an aliphatic amine compound to the rinse solvent.
摘要:
The remover solution for photoresist layers comprises: (a) from 30 to 70% by weight of an aromatic hydrocarbon compound or a combination of aromatic hydrocarbon compounds having a flash point of 70.degree. C. or higher containing at least a half amount of a naphthalenic compound selected from the group consisting of naphthalene, methyl naphthalenes and dimethyl naphthalenes; (b) from 5 to 40% by weight of a phenolic compound; and (c) from 10 to 50% by weight of an arylsulfonic acid. The remover solution is effective for a variety of photoresist compositions with less problems in respect to the workers' health and danger of fire and explosion than conventional remover solutions.
摘要:
Disclosed is a novel negative-working radiation-sensitive resist composition useful in the photolithographic patterning works of resist layers on substrate surfaces in the manufacture of semiconductor devices and capable of giving a finely patterned resist layer with high resolution and having an excellently orthogonal cross sectional profile of the line-wise patterned resist layer with an outstandingly high sensitivity to various actinic rays. The composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a cresol novolac resin, (b) a specific alkoxymethylated amino resin, e.g., methoxymethylated melamine resin, and (c) a specific triazine compound in a limited weight proportion.
摘要:
The remover composition of the invention is advantageous in respect of the thermal stability without precipitation of insoluble matters when the remover is used prolongedly in a removing work of patterned resist, e.g., photoresist, layer in the manufacturing process of semiconductor devices. The inventive remover composition characteristically contains 1 to 50,000 ppm by weight of an acetylene alcohol such as 3-methyl-2-butyn-3-ol added to an organic remover solution composed of an alkylbenzene sulfonic acid, phenol compound, halogenated hydrocarbon compound and/or aromatic hydrocarbon compound.
摘要:
An object of the present invention is to provide a highly stable nucleic acid-polysaccharide complex of an siRNA and schizophyllan. A nucleic acid-polysaccharide complex is formed by adding polydeoxyadenine in which at least part of the phosphodiester link portion is phosphorothioated to an siRNA and allowing the siRNA and schizophyllan to form a complex.
摘要:
The entirety or a part of free space of a second storage device included in a host computer is used as a cache memory region (external cache) outside of a storage apparatus. If Input/Output (I/O) in the host computer is Write, a Write request is transmitted from the host computer to a storage apparatus, the storage apparatus writes data associated with the Write request into a main cache that is a cache memory region included in this storage apparatus, and the storage apparatus writes the data in the main cache into a first storage device included in the storage apparatus. The storage apparatus writes the data in the main cache into an external cache included in the host computer. If the I/O in the host computer is Read, the host computer determines whether or not Read data as target data of the Read exists in the external cache. If a result of the determination is positive, the host computer reads the Read data from the external cache.
摘要:
An object of the present invention is to provide a highly stable nucleic acid-polysaccharide complex of an siRNA and schizophyllan. A nucleic acid-polysaccharide complex is formed by adding polydeoxyadenine in which at least part of the phosphodiester link portion is phosphorothioated to an siRNA and allowing the siRNA and schizophyllan to form a complex.
摘要:
A screen printing device configured to print a printing paste on a printed board, the printing paste being applied on a screen printing plate where openings corresponding to a pattern to be printed are formed, the screen printing device includes a first squeegee advanced and pressed downward so that the printing paste is pushed on the printed board corresponding to the openings of the screen printing plate; and a second squeegee situated in the vicinity of the rear of the first squeegee, the second squeegee being configured to provide pressure forward and downward, the pressure having properties different from properties of a pressure provided by the first squeegee, wherein a printing operation by the second squeegee is performed right after a printing operation by the first squeegee.
摘要:
The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.
摘要:
The present invention provides a composition for forming a top anti-reflection coating and also provides a pattern formation method employing that composition. The composition prevents pattern failures caused by light reflected in the resist layer in the exposure step, and it further avoids troubles caused by residues produced in the etching step. The composition contains a solvent and fine particles having a mean particle size of 1 to 100 nm. In the pattern formation method of the present invention, a top anti-reflection coating is formed from the composition. The composition and the method according to the present invention can be used to form a composite film composed of a resist layer and a top anti-reflection coating.