Method for rinse treatment of a substrate
    1.
    发明授权
    Method for rinse treatment of a substrate 失效
    冲洗处理基材的方法

    公开(公告)号:US4824762A

    公开(公告)日:1989-04-25

    申请号:US67313

    申请日:1987-06-26

    CPC分类号: G03F7/425

    摘要: The improvement of the invention consists in the use of a specific ether compound, e.g., diethyleneglycol monomethyl, monoethyl and monobutyl ethers, dipropyleneglycol monomethyl and monoethyl ethers, triethyleneglycol monomethyl and monoethyl ethers and tripropyleneglycol monomethyl ether, as a rinse solvent for a substrate from which the pattern photoresist layer has been removed with a remover solution in the photolithographic processing of semiconductor devices. The rinse solvent is free from the problems in the toxicity to human body and environment pollution relative to waste disposal as well as the danger of fire. The rinse solvent is versatile to be applicable to both of the negative- and positive-working photoresist compositions. Further advantages are obtained by adding an aliphatic amine compound to the rinse solvent.

    摘要翻译: 本发明的改进在于使用特定的醚化合物,例如二甘醇单甲基,单乙基和单丁基醚,二丙二醇单甲基和单乙基醚,三乙二醇单甲基和单乙基醚和三丙二醇单甲醚作为底物的漂洗溶剂, 在半导体器件的光刻处理中,用去除剂溶液除去图案光致抗蚀剂层。 冲洗溶剂没有相对于废物处理对人体的毒性和环境污染的问题以及火灾的危险。 漂洗溶剂是通用的,适用于负性和正性光致抗蚀剂组合物。 通过向漂洗溶剂中加入脂族胺化合物可获得进一步的优点。

    Containing an arylsulfonic acid, a phenol and a naphalenic solvent
    2.
    发明授权
    Containing an arylsulfonic acid, a phenol and a naphalenic solvent 失效
    含有芳基磺酸,苯酚和萘酸溶剂

    公开(公告)号:US4844832A

    公开(公告)日:1989-07-04

    申请号:US149971

    申请日:1988-02-03

    CPC分类号: G03F7/426 C09D9/005

    摘要: The remover solution for photoresist layers comprises: (a) from 30 to 70% by weight of an aromatic hydrocarbon compound or a combination of aromatic hydrocarbon compounds having a flash point of 70.degree. C. or higher containing at least a half amount of a naphthalenic compound selected from the group consisting of naphthalene, methyl naphthalenes and dimethyl naphthalenes; (b) from 5 to 40% by weight of a phenolic compound; and (c) from 10 to 50% by weight of an arylsulfonic acid. The remover solution is effective for a variety of photoresist compositions with less problems in respect to the workers' health and danger of fire and explosion than conventional remover solutions.

    摘要翻译: 光致抗蚀剂层的去除剂溶液包括:(a)30至70重量%的芳族烃化合物或闪点为70℃或更高的含至少一半的萘的芳族烃化合物的组合 选自萘,甲基萘和二甲基萘的化合物; (b)5〜40重量%的酚类化合物; 和(c)10至50重量%的芳基磺酸。 去除剂溶液对于各种光刻胶组合物是有效的,与常规去除剂溶液相比,相对于工人的健康和火灾和爆炸危险的问题较少。

    Negative-working radiation-sensitive resist composition
    3.
    发明授权
    Negative-working radiation-sensitive resist composition 失效
    负性辐射敏感抗蚀剂组合物

    公开(公告)号:US5368783A

    公开(公告)日:1994-11-29

    申请号:US52484

    申请日:1993-04-23

    CPC分类号: G03F7/038 G03F7/0045

    摘要: Disclosed is a novel negative-working radiation-sensitive resist composition useful in the photolithographic patterning works of resist layers on substrate surfaces in the manufacture of semiconductor devices and capable of giving a finely patterned resist layer with high resolution and having an excellently orthogonal cross sectional profile of the line-wise patterned resist layer with an outstandingly high sensitivity to various actinic rays. The composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a cresol novolac resin, (b) a specific alkoxymethylated amino resin, e.g., methoxymethylated melamine resin, and (c) a specific triazine compound in a limited weight proportion.

    摘要翻译: 公开了一种新颖的负性辐射敏感抗蚀剂组合物,其可用于半导体器件制造中的衬底表面上的抗蚀剂层的光刻图案化工作,并且能够以高分辨率给出精细图案化的抗蚀剂层并且具有非常正交的横截面轮廓 的线形图案化抗蚀剂层,对各种光化射线具有极高的灵敏度。 组合物包含(a)碱溶性树脂如甲酚酚醛清漆树脂,(b)特定烷氧基甲基化氨基树脂,例如甲氧基甲基化三聚氰胺树脂和(c)有限制的三嗪化合物作为必要成分 重量比例。

    Remover solution for resist
    4.
    发明授权
    Remover solution for resist 失效
    去除溶液为抗蚀剂

    公开(公告)号:US4944893A

    公开(公告)日:1990-07-31

    申请号:US243001

    申请日:1988-09-12

    CPC分类号: C11D7/5022 G03F7/426

    摘要: The remover composition of the invention is advantageous in respect of the thermal stability without precipitation of insoluble matters when the remover is used prolongedly in a removing work of patterned resist, e.g., photoresist, layer in the manufacturing process of semiconductor devices. The inventive remover composition characteristically contains 1 to 50,000 ppm by weight of an acetylene alcohol such as 3-methyl-2-butyn-3-ol added to an organic remover solution composed of an alkylbenzene sulfonic acid, phenol compound, halogenated hydrocarbon compound and/or aromatic hydrocarbon compound.

    摘要翻译: 当在半导体器件的制造过程中图案化抗蚀剂例如光致抗蚀剂层的去除工作中延长使用去除剂时,本发明的去除剂组合物在热稳定性方面是有利的。 本发明的去除剂组合物特征在于包含1至50,000ppm重量的乙炔醇,例如3-烷基苯磺酸,酚化合物,卤代烃化合物和/或其混合物所组成的有机去除剂溶液中的3-甲基-2-丁炔-3-醇, 或芳族烃化合物。

    COMPUTER SYSTEM AND STORAGE CONTROL METHOD
    6.
    发明申请
    COMPUTER SYSTEM AND STORAGE CONTROL METHOD 有权
    计算机系统和存储控制方法

    公开(公告)号:US20130198457A1

    公开(公告)日:2013-08-01

    申请号:US13577165

    申请日:2012-01-26

    IPC分类号: G06F12/02

    CPC分类号: G06F12/0866 G06F2212/314

    摘要: The entirety or a part of free space of a second storage device included in a host computer is used as a cache memory region (external cache) outside of a storage apparatus. If Input/Output (I/O) in the host computer is Write, a Write request is transmitted from the host computer to a storage apparatus, the storage apparatus writes data associated with the Write request into a main cache that is a cache memory region included in this storage apparatus, and the storage apparatus writes the data in the main cache into a first storage device included in the storage apparatus. The storage apparatus writes the data in the main cache into an external cache included in the host computer. If the I/O in the host computer is Read, the host computer determines whether or not Read data as target data of the Read exists in the external cache. If a result of the determination is positive, the host computer reads the Read data from the external cache.

    摘要翻译: 包含在主计算机中的第二存储装置的可用空间的整体或一部分被用作在存储装置之外的高速缓冲存储器区域(外部高速缓存)。 如果主计算机中的输入/输出(I / O)为写入,则从主计算机向存储装置发送写请求,存储装置将与写请求相关联的数据写入作为高速缓冲存储器区域的主缓存 包括在该存储装置中,并且存储装置将数据存储在主高速缓存中,以包含在存储装置中的第一存储装置中。 存储装置将主缓存中的数据写入包含在主计算机中的外部高速缓存。 如果主计算机中的I / O为读取,则主机确定读取数据作为Read的目标数据是否存在于外部缓存中。 如果确定结果为肯定,则主机从外部缓存读取读取数据。

    Screen printing method and apparatus including two squeegees with different lengths and pressures
    8.
    发明授权
    Screen printing method and apparatus including two squeegees with different lengths and pressures 有权
    丝网印刷方法和装置包括两个具有不同长度和压力的刮板

    公开(公告)号:US07802516B2

    公开(公告)日:2010-09-28

    申请号:US12222797

    申请日:2008-08-15

    IPC分类号: B41F15/44 B41F15/42

    摘要: A screen printing device configured to print a printing paste on a printed board, the printing paste being applied on a screen printing plate where openings corresponding to a pattern to be printed are formed, the screen printing device includes a first squeegee advanced and pressed downward so that the printing paste is pushed on the printed board corresponding to the openings of the screen printing plate; and a second squeegee situated in the vicinity of the rear of the first squeegee, the second squeegee being configured to provide pressure forward and downward, the pressure having properties different from properties of a pressure provided by the first squeegee, wherein a printing operation by the second squeegee is performed right after a printing operation by the first squeegee.

    摘要翻译: 一种丝网印刷装置,其被配置为将印刷浆料印刷在印刷板上,所述印刷浆料被施加在丝网印刷板上,所述丝网印刷板形成与待印刷图案相对应的开口,所述丝网印刷装置包括先进并向下压的第一刮板 印刷浆料被压在与丝网印刷版的开口相对应的印刷板上; 以及第二刮板,其位于所述第一刮板的后部附近,所述第二刮板被构造成向前和向下提供压力,所述压力具有与由所述第一刮板提供的压力的特性不同的性质,其中, 在第一刮板的打印​​操作之后执行第二刮板。

    COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM AND PATTERN FORMATION METHOD USING THE SAME
    9.
    发明申请
    COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM AND PATTERN FORMATION METHOD USING THE SAME 有权
    用于形成抗反射膜的组合物和使用其的图案形成方法

    公开(公告)号:US20100081087A1

    公开(公告)日:2010-04-01

    申请号:US12448517

    申请日:2007-12-21

    CPC分类号: G03F7/091

    摘要: The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.

    摘要翻译: 本发明提供一种用于形成具有这种低折射率的顶部抗反射涂层的组合物,其可以适合用于用ArF准分子激光束进行图案形成,并且本发明还提供了使用该组成的图案形成方法。 顶部防反射涂料组合物包含特定的萘化合物,聚合物和溶剂。 该组合物用于形成设置在光致抗蚀剂层上的顶部防反射涂层。 从光致抗蚀剂层可以通过使用160〜260nm的光来形成图案。

    COMPOSITION FOR UPPER SURFACE ANTIREFLECTION FILM, AND METHOD FOR PATTERN FORMATION USING THE SAME
    10.
    发明申请
    COMPOSITION FOR UPPER SURFACE ANTIREFLECTION FILM, AND METHOD FOR PATTERN FORMATION USING THE SAME 审中-公开
    用于上表面抗反射膜的组合物及其形成图案的方法

    公开(公告)号:US20100062363A1

    公开(公告)日:2010-03-11

    申请号:US12312365

    申请日:2007-11-15

    CPC分类号: G02B1/11 G02B1/118 G03F7/091

    摘要: The present invention provides a composition for forming a top anti-reflection coating and also provides a pattern formation method employing that composition. The composition prevents pattern failures caused by light reflected in the resist layer in the exposure step, and it further avoids troubles caused by residues produced in the etching step. The composition contains a solvent and fine particles having a mean particle size of 1 to 100 nm. In the pattern formation method of the present invention, a top anti-reflection coating is formed from the composition. The composition and the method according to the present invention can be used to form a composite film composed of a resist layer and a top anti-reflection coating.

    摘要翻译: 本发明提供了一种用于形成顶部防反射涂层的组合物,并且还提供了使用该组合物的图案形成方法。 该组合物防止在曝光步骤中由抗蚀剂层反射的光引起的图案故障,并且进一步避免了由蚀刻步骤中产生的残留物引起的故障。 该组合物含有溶剂和平均粒径为1〜100nm的微粒。 在本发明的图案形成方法中,由该组合物形成顶部的防反射涂层。 根据本发明的组合物和方法可以用于形成由抗蚀剂层和顶部防反射涂层组成的复合膜。