摘要:
An X-ray detector (5) comprises an X-ray-electric charge conversion film (21) for directly converting into charges an incident X-ray that has passed through a subject (2) and is received, and a charge information reading section (15) for detecting charges produced by the X-ray-electric charge conversion film (21) as image signals. The X-ray-electric charge conversion film (21) consists essentially of a rare-earth compound containing at least one of rare-earth element and at least one of element selected from oxygen, sulfur, selenium and tellurium. The X-ray-electric charge conversion film (21) does not adversely affect human bodies and environment, and is excellent in sensitivity, film-forming feature and the like. Accordingly, the X-ray detector (5) which is provided with the improved X-ray detection sensitivity, detection accuracy and the like with environmental loads and the like decreased can be provided.
摘要:
An X-ray detector (5) comprises an X-ray-electric charge conversion film (21) for directly converting into charges an incident X-ray that has passed through a subject (2) and is received, and a charge information reading section (15) for detecting charges produced by the X-ray-electric charge conversion film (21) as image signals. The X-ray-electric charge conversion film (21) consists essentially of a rare-earth compound containing at least one of rare-earth element and at least one of element selected from oxygen, sulfur, selenium and tellurium. The X-ray-electric charge conversion film (21) does not adversely affect human bodies and environment, and is excellent in sensitivity, film-forming feature and the like. Accordingly, the X-ray detector (5) which is provided with the improved X-ray detection sensitivity, detection accuracy and the like with environmental loads and the like decreased can be provided.
摘要:
A ceramic scintillator material consists of a sintered body of a rare earth oxysulfide phosphor containing Pr as an activator. The sintered body has a texture where coarse grains of irregular polyhedron and slender fine grains are intermixed. The coarse grains have a shape of for instance a dimension (average value) in the range of 50 to 100 &mgr;m, the fine grains having a shape of which average short axis is in the range of 2 to 5 &mgr;m and average long axis in the range of 5 to 100 &mgr;m. An area ratio of the coarse grains to the fine grains is in the range of 10:90 to 60:40. Such a ceramic scintillator material has, in addition to excellent light output (high sensitivity), mechanical strength capable of coping with downsizing of a detector. Furthermore, non-uniformity in sensitivity that causes artifacts can be decreased.
摘要:
A light emitting apparatus 1 comprises: a semiconductor light emitting element 2; and a transparent ceramic phosphor 11 for converting a wavelength of a light emitted from the semiconductor light emitting element 2, wherein the semiconductor light emitting element 2 emits an ultraviolet light, and the ceramic phosphor 11 corresponding to the semiconductor light emitting element 2 has: a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm; and a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.
摘要:
The present invention relates to a light emitting apparatus including a semiconductor light emitting element and a transparent ceramic phosphor for converting a wavelength of a light emitted from the semiconductor light emitting element, wherein the semiconductor light emitting element emits an ultraviolet light, and the ceramic phosphor corresponding to the semiconductor light emitting element has (i) a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm and (ii) a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.
摘要:
A ceramic scintillator comprises a sintered body of a lutetium oxysulfide phosphor containing at least one element selected from Pr, Tb and Eu as an activator. The sintered body of a lutetium oxysulfide phosphor contains 5 to 15 ppm of an alkali metal element and 5 to 40 ppm of phosphorus. Such a ceramic scintillator can sufficiently make use of the intrinsic characteristics of the lutetium oxysulfide phosphor and has good sensitivity in X-ray detection even when it is downsized.
摘要:
A sintered body of a rare earth oxysulfide is heat-treated at a temperature of 900° C. to 1200° C. in an atmosphere of a mixture of sulfur and oxygen to form island-like rare earth oxide phases on the surface of the sintered body to produce a ceramic scintillator. Therefore, the ceramic scintillator comprises a sintered body of a rare earth oxysulfide, and a rare earth oxide phase formed on the surface of the sintered body, wherein a rare earth oxysulfide phase or the rare earth oxide phase is dispersed on the surface of the sintered body, so that the optical output characteristic of the ceramic scintillator is improved. According to this ceramic scintillator, it is possible to remove the pressure and distortion during sintering, the coloring caused by the deviation from the stoichiometric composition, and the coloring caused during processing such as saw-cutting and polishing.
摘要:
A ceramic scintillator comprises a sintered body of a lutetium oxysulfide phosphor containing at least one element selected from Pr, Tb and Eu as an activator. The sintered body of a lutetium oxysulfide phosphor contains 5 to 15 ppm of an alkali metal element and 5 to 40 ppm of phosphorus. Such a ceramic scintillator can sufficiently make use of the intrinsic characteristics of the lutetium oxysulfide phosphor and has good sensitivity in X-ray detection even when it is downsized.
摘要:
Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu2+, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.
摘要:
An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.