LIGHT EMISSION DEVICE
    4.
    发明申请
    LIGHT EMISSION DEVICE 有权
    光发射装置

    公开(公告)号:US20090057698A1

    公开(公告)日:2009-03-05

    申请号:US11817504

    申请日:2006-02-23

    IPC分类号: H01L33/00

    摘要: A light emitting apparatus 1 comprises: a semiconductor light emitting element 2; and a transparent ceramic phosphor 11 for converting a wavelength of a light emitted from the semiconductor light emitting element 2, wherein the semiconductor light emitting element 2 emits an ultraviolet light, and the ceramic phosphor 11 corresponding to the semiconductor light emitting element 2 has: a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm; and a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.

    摘要翻译: 发光装置1包括:半导体发光元件2; 以及用于转换从半导体发光元件2发射的光的波长的透明陶瓷荧光体11,其中半导体发光元件2发射紫外光,并且对应于半导体发光元件2的陶瓷荧光体11具有: 在350-420nm的波长下的最小透射率为0.1〜40%; 在陶瓷荧光体的发光峰值波长下的透射率为10〜90%。

    Light emission device
    5.
    发明授权
    Light emission device 有权
    发光装置

    公开(公告)号:US07923740B2

    公开(公告)日:2011-04-12

    申请号:US11817504

    申请日:2006-02-23

    IPC分类号: H01L33/00

    摘要: The present invention relates to a light emitting apparatus including a semiconductor light emitting element and a transparent ceramic phosphor for converting a wavelength of a light emitted from the semiconductor light emitting element, wherein the semiconductor light emitting element emits an ultraviolet light, and the ceramic phosphor corresponding to the semiconductor light emitting element has (i) a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm and (ii) a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.

    摘要翻译: 本发明涉及一种发光装置,其包括半导体发光元件和透明陶瓷荧光体,用于转换半导体发光元件发射的光的波长,其中半导体发光元件发射紫外光,并且陶瓷荧光体 对应于半导体发光元件具有(i)在350-420nm的波长下的最小透射率为0.1〜40%,(ii)在陶瓷荧光体的发光峰值波长下的透射率为10〜90%。

    Ceramic scintillator, method for producing same, and x-ray detector and x-ray CT imaging equipment using same
    7.
    发明授权
    Ceramic scintillator, method for producing same, and x-ray detector and x-ray CT imaging equipment using same 有权
    陶瓷闪烁体,其制造方法以及使用其的X射线检测器和X射线CT成像设备

    公开(公告)号:US06384417B1

    公开(公告)日:2002-05-07

    申请号:US09407760

    申请日:1999-09-29

    IPC分类号: G01T100

    摘要: A sintered body of a rare earth oxysulfide is heat-treated at a temperature of 900° C. to 1200° C. in an atmosphere of a mixture of sulfur and oxygen to form island-like rare earth oxide phases on the surface of the sintered body to produce a ceramic scintillator. Therefore, the ceramic scintillator comprises a sintered body of a rare earth oxysulfide, and a rare earth oxide phase formed on the surface of the sintered body, wherein a rare earth oxysulfide phase or the rare earth oxide phase is dispersed on the surface of the sintered body, so that the optical output characteristic of the ceramic scintillator is improved. According to this ceramic scintillator, it is possible to remove the pressure and distortion during sintering, the coloring caused by the deviation from the stoichiometric composition, and the coloring caused during processing such as saw-cutting and polishing.

    摘要翻译: 在硫和氧混合物的气氛中,将氧化硫化稀土的烧结体在900℃〜1200℃的温度下进行热处理,在烧结体的表面形成岛状稀土氧化物相, 产生陶瓷闪烁体。 因此,陶瓷闪烁体包括在烧结体表面形成的稀土氧硫化物的烧结体和稀土氧化物相,其中稀土氧硫化物相或稀土氧化物相分散在烧结体的表面上 使得陶瓷闪烁体的光输出特性得到改善。 根据该陶瓷闪烁体,可以消除烧结期间的压力和变形,由化学计量组成的偏离引起的着色以及在切割和抛光等加工过程中引起的着色

    Fluorescent substance and light-emitting device using the same
    10.
    发明授权
    Fluorescent substance and light-emitting device using the same 有权
    荧光物质和使用其的发光装置

    公开(公告)号:US07572391B2

    公开(公告)日:2009-08-11

    申请号:US12142078

    申请日:2008-06-19

    IPC分类号: C09K11/59 C09K11/55

    摘要: An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.

    摘要翻译: 提供一种制造荧光物质的方法,其包括将Eu原料,Si原料,至少一种碱土金属的原料粉末和选自La, Gd,Cs和K,得到原料混合物; 预焙烧混合物以获得烘焙材料; 混合焙烧的材料并在由N 2 / H 2的混合气体组成的还原气氛中进行焙烧以获得第一烧制产品; 粉碎第一烧制产品以获得粉碎的第一烧制产品;在粉碎的第一烧制产物在N2 / H2的还原气氛中焙烧,得到由碱土金属硅酸盐组成的荧光物质; 粉碎荧光物质以获得荧光颗粒; 筛分荧光颗粒; 并在荧光颗粒的表面上提供表面覆盖材料。