公开(公告)号：US20110129618A1

公开(公告)日：2011-06-02

申请号：US12954767

申请日：2010-11-26

申请人： Masanobu MATSUNAGA ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

发明人： Masanobu MATSUNAGA ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

IPC分类号： H05H1/24 ,  C23C16/02

CPC分类号： C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546

摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.

摘要翻译： 使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理 具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。 涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。 成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

公开(公告)号：US20120164848A1

公开(公告)日：2012-06-28

申请号：US13338288

申请日：2011-12-28

申请人： Motoki FUJII ,  Masanobu MATSUNAGA ,  Kazuya YAMAMOTO ,  Kota UMEZAWA

发明人： Motoki FUJII ,  Masanobu MATSUNAGA ,  Kazuya YAMAMOTO ,  Kota UMEZAWA

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76834

摘要： A plasma-assisted ALD method using a vertical furnace and being performed by repeating a cycle until a desired film thickness is obtained is disclosed. The cycle comprises introducing a source gas containing a source to be nitrided, adsorbing, purging, introducing a nitriding gas and nitriding the source, and then, purging. A flow rate of a second carrier gas during introduction of the nitriding gas is reduced relative to that of a first carrier gas during introduction of the source gas. Particularly, a flow ratio of NH3 gas as the nitriding gas to N2 gas as the second carrier gas is 50:3 or less.

摘要翻译： 公开了使用垂直炉的等离子体辅助ALD方法，并且通过重复循环直到获得所需的膜厚度来进行。 该循环包括引入含氮源的源气体，吸附，净化，引入氮化气体和氮化氮源，然后进行清洗。 在引入氮化气体期间，第二载气的流量相对于第一载气在引入源气体时的流量减小。 特别地，作为氮化气体的NH 3气体与作为第二载气的N 2气体的流量比为50:3以下。