利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

111 条记录 (耗时 0.043 秒)

    Memory element and memory device
    3.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08611139B2

    公开(公告)日：2013-12-17

    申请号：US13226983

    申请日：2011-09-07

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    IPC分类号： G11C11/00

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

    摘要： There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

    摘要翻译： 公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且 除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。

    Memory element and memory device
    5.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08445980B2

    公开(公告)日：2013-05-21

    申请号：US13216453

    申请日：2011-08-24

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675

    摘要： There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.

    摘要翻译： 公开了一种包含分层结构的存储元件。 层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层，由此磁化 存储层的方向变化，进行信息记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，至少与 盖层的记忆层由Ta膜形成。

    Memory element and memory device
    6.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08436438B2

    公开(公告)日：2013-05-07

    申请号：US13216464

    申请日：2011-08-24

    申请人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： G11C11/16 ,  G11C11/161

    摘要： There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.

    摘要翻译： 提供了包括具有垂直于膜面的磁化的存储层的存储元件; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 的信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，绝缘层由氧化膜形成，并且存储层由Co-Fe- B，与绝缘层的界面附近B的浓度低，B的浓度随着从绝缘层后退而增加。

    MEMORY ELEMENT AND MEMORY DEVICE
    7.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120294079A1

    公开(公告)日：2012-11-22

    申请号：US13465755

    申请日：2012-05-07

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC分类号： G11C11/15

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    摘要： A memory element including a memory layer to hold the information by the magnetization state of a magnetic substance, a magnetization pinned layer having magnetization serving as a reference of the information stored in the memory layer, an intermediate layer formed from a nonmagnetic substance disposed between the memory layer and the magnetization pinned layer, a magnetic coupling layer disposed adjoining the magnetization pinned layer and opposing to the intermediate layer, and a high coercive force layer disposed adjoining the magnetic coupling layer, wherein the information is stored by reversing magnetization of the memory layer, making use of spin torque magnetization reversal generated along with a current passing in the lamination direction of the layered structure including the memory layer, the intermediate layer, and the magnetization pinned layer, and the magnetic coupling layer has a two-layer laminate structure.

    摘要翻译： 一种存储元件，包括通过磁性物质的磁化状态保持信息的存储层，具有作为存储在存储层中的信息的参考的磁化的磁化固定层，由设置在存储层中的非磁性物质形成的中间层 存储层和磁化固定层，邻近所述磁化被钉扎层并与所述中间层相对设置的磁耦合层和邻近所述磁耦合层设置的高矫顽力层，其中所述信息通过反转存储层的磁化而被存储 利用随着在包括存储层，中间层和磁化被钉扎层的层叠方向的层叠方向上流过的电流产生的自旋转矩磁化反转，并且磁耦合层具有两层层叠结构。

    MEMORY ELEMENT AND MEMORY DEVICE
    9.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20120056284A1

    公开(公告)日：2012-03-08

    申请号：US13216453

    申请日：2011-08-24

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675

    摘要： There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.

    摘要翻译： 公开了一种包含分层结构的存储元件。 层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层，由此磁化 存储层的方向变化，进行信息记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，至少与 盖层的记忆层由Ta膜形成。

    STORAGE ELEMENT AND STORAGE DEVICE
    10.
    发明申请
    STORAGE ELEMENT AND STORAGE DEVICE 有权
    存储元件和存储设备

    公开(公告)号：US20110316102A1

    公开(公告)日：2011-12-29

    申请号：US13116755

    申请日：2011-05-26

    申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161

    摘要： A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.

    摘要翻译： 存储元件包括：存储层，其被配置为基于磁性材料的磁化状态保持信息，并且包括其磁化方向在垂直于膜平面，非磁性层和铁磁层的方向上的垂直磁化层 其沿着膜平面的方向具有容易磁化的轴，并且具有相对于垂直于膜平面的方向倾斜角度在15度至45度范围内的磁化方向，所述存储层通过 垂直磁化层和铁磁层，介于非磁性层和垂直磁化层与铁磁层之间的磁耦合; 磁化钉扎层; 和非磁性中间层。