公开(公告)号：US07026671B2

公开(公告)日：2006-04-11

申请号：US10457492

申请日：2003-06-09

申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。

公开(公告)号：US06992868B2

公开(公告)日：2006-01-31

申请号：US11088564

申请日：2005-03-24

申请人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

发明人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228

摘要： There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2 to 10000 Ωnm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit-lines and word lines sandwiching the magnetoresistive effect element 1.

摘要翻译： 提供具有令人满意的磁特性的磁阻效应元件和包括该磁阻效应元件的磁存储器件，以产生优良的写/读特性。 磁阻效应元件1具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以通过流向垂直于膜平面的方向产生磁阻变化， 具有2000欧姆2至10000欧姆2的标准化电阻的无磁化层，其中当电流流过磁化的膜厚度方向时获得的电阻率的乘积 自由层7和膜厚度定义为归一化电阻。 磁存储器件包括该磁阻效应元件1和夹在磁阻效应元件1上的位线和字线。

公开(公告)号：US20050162905A1

公开(公告)日：2005-07-28

申请号：US11088565

申请日：2005-03-24

申请人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

发明人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

IPC分类号： G01R33/09 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228

摘要： There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2 to 10000 Ωnm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.

摘要翻译： 提供具有令人满意的磁特性的磁阻效应元件和包括该磁阻效应元件的磁存储器件，以产生优良的写/读特性。 磁阻效应元件1具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以通过流向垂直于膜平面的方向产生磁阻变化， 具有2000欧姆2至10000欧姆2的标准化电阻的无磁化层，其中当电流流过磁化的膜厚度方向时获得的电阻率的乘积 自由层7和膜厚度定义为归一化电阻。 磁存储器件包括该磁阻效应元件1和夹在磁阻效应元件1上的位线和字线。

公开(公告)号：US20050157542A1

公开(公告)日：2005-07-21

申请号：US11078942

申请日：2005-03-11

申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L43/08

CPC分类号： G11C11/16

摘要： In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

公开(公告)号：US06815745B2

公开(公告)日：2004-11-09

申请号：US10341857

申请日：2003-01-14

申请人： Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Mizuguchi ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano

发明人： Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Mizuguchi ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano

IPC分类号： H01L31119

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/302

摘要： When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.

公开(公告)号：US20080006860A1

公开(公告)日：2008-01-10

申请号：US11853294

申请日：2007-09-11

申请人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0≦c≦35, 10≦d≦30. a+b+C+d=100).

摘要翻译： 通过将新材料应用于铁磁层，可以同时改善写入特性和读取特性。 在具有通过中间层彼此相对的一对铁磁层的磁阻效应元件中，使得电流在垂直于膜平面的方向上流动以获得磁阻变化，至少一个铁磁层包含一个 含Fe，Co和B的铁磁材料。铁磁材料应优选含有Fe，Co和B。铁磁材料应优选含有Fe，Co和B。 （在化学式中，a，b，c和d表示原子％。5 <= a <= 45,35 <= b <= 85,0 <= c <= 35,10 <= d <= 30。 a + b + C + d = 100）。

公开(公告)号：US07034348B2

公开(公告)日：2006-04-25

申请号：US10491324

申请日：2003-08-01

申请人： Kazuhiro Ohba ,  Hiroshi Kano ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi

发明人： Kazuhiro Ohba ,  Hiroshi Kano ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi

IPC分类号： H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3277 ,  H01L43/10

摘要： A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.

摘要翻译： 磁阻效应元件可以被赋予令人满意的磁特性，因为可以抑制退火时的磁阻变化率的劣化，并且磁存储器件包括这种磁阻效应元件以提供优异的写入特性。 磁阻效应元件具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以使电流在垂直于层表面的方向上流动以获得磁阻变化 。 磁存储器件包括磁阻效应元件1，其中该对铁磁层5,7中的至少一个包含结晶温度高于623K的非晶态铁磁材料，并且夹着该磁阻效应元件的位线和字线和 磁阻效应元件在厚度方向上。

公开(公告)号：US06831314B2

公开(公告)日：2004-12-14

申请号：US10606097

申请日：2003-06-25

申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Takeyuki Sone ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Takeyuki Sone ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi ,  Hiroshi Kano

IPC分类号： H01L2976

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254

摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface, the magnetization free layer (7) is made of a ferromagnetic material containing FeCoB or FeCoNiB and the magnetization free layer (7) has a film thickness ranging from 2 nm to 8 nm. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. There are provided the magnetoresistive effect element having satisfactory magnetic characteristics and the magnetic memory device including this magnetoresistive effect element and which can obtain excellent write/read characteristics.

摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，磁化自由层（7）由含有FeCoB或FeCoNiB的铁磁材料制成，并且磁化自由层（7）的膜厚度范围为2nm至8 nm。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 提供了具有令人满意的磁特性的磁阻效应元件和包括该磁阻效应元件的磁存储器件，并且可以获得优异的读/写特性。

公开(公告)号：US07315053B2

公开(公告)日：2008-01-01

申请号：US10480242

申请日：2003-04-08

申请人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0

摘要翻译： 通过将新材料应用于铁磁层，可以同时改善写入特性和读取特性。 在具有一对铁磁层的磁阻效应元件中，通过中间层彼此相对以使电流在垂直于膜平面的方向上流动以获得磁阻变化，至少一个铁磁层包含铁磁性层 含有Fe，Co和B的材料。铁磁材料应优选含有Fe，Co和B。 （在化学式中，a，b，c和d表示原子％5 <= a <= 45,35 <= b <= 85,0

公开(公告)号：US20060187703A1

公开(公告)日：2006-08-24

申请号：US11300554

申请日：2005-12-14

申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。