利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

60 条记录 (耗时 0.025 秒)

    Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
    1.
    发明授权
    Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device 有权
    磁阻效应元件，磁存储器件以及磁阻效应元件和磁存储器件的制造方法

    公开(公告)号：US07026671B2

    公开(公告)日：2006-04-11

    申请号：US10457492

    申请日：2003-06-09

    申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

    发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

    IPC分类号： H01L29/76

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

    摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

    摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。

    Magnetoresistive effect element and magnetic memory device
    2.
    发明授权
    Magnetoresistive effect element and magnetic memory device 失效
    磁阻效应元件和磁存储器件

    公开(公告)号：US06992868B2

    公开(公告)日：2006-01-31

    申请号：US11088564

    申请日：2005-03-24

    申请人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

    发明人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228

    摘要： There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2 to 10000 Ωnm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit-lines and word lines sandwiching the magnetoresistive effect element 1.

    摘要翻译： 提供具有令人满意的磁特性的磁阻效应元件和包括该磁阻效应元件的磁存储器件，以产生优良的写/读特性。 磁阻效应元件1具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以通过流向垂直于膜平面的方向产生磁阻变化， 具有2000欧姆2至10000欧姆2的标准化电阻的无磁化层，其中当电流流过磁化的膜厚度方向时获得的电阻率的乘积 自由层7和膜厚度定义为归一化电阻。 磁存储器件包括该磁阻效应元件1和夹在磁阻效应元件1上的位线和字线。

    Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
    7.
    发明申请
    Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device 审中-公开
    磁阻效应元件，磁记忆装置以及磁阻效应元件和磁存储器件的制造方法

    公开(公告)号：US20060187703A1

    公开(公告)日：2006-08-24

    申请号：US11300554

    申请日：2005-12-14

    申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

    发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

    摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

    摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。

    Magnetoresistive element and magnetic memory unit
    8.
    发明授权
    Magnetoresistive element and magnetic memory unit 有权
    磁阻元件和磁存储器单元

    公开(公告)号：US06990014B2

    公开(公告)日：2006-01-24

    申请号：US11078976

    申请日：2005-03-11

    申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

    发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

    摘要翻译： 在一个磁阻元件中，至少包括一对铁磁层，它们之间层叠有一个中间层，并通过允许电流沿与层叠层的平面交叉的方向流动来实现磁阻的变化， 构成其中构成信息记录层的至少一个铁磁层具有包含CoFeB或CoFeNiB合金的非晶结构，并且具有在一个方向上具有长轴的平面形式，其中沿着长轴方向的两侧形成直线或 并且其长轴方向的两端形成弯曲或向外弯曲，其中图案形式的纵横比为1：1.2至1：3.5，可以稳定地获得性能一致的优异的小行星曲线 。

    Magnetoresistive effect element and magnetic memory device
    10.
    发明授权
    Magnetoresistive effect element and magnetic memory device 有权
    磁阻效应元件和磁存储器件

    公开(公告)号：US07034348B2

    公开(公告)日：2006-04-25

    申请号：US10491324

    申请日：2003-08-01

    申请人： Kazuhiro Ohba ,  Hiroshi Kano ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi

    发明人： Kazuhiro Ohba ,  Hiroshi Kano ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi

    IPC分类号： H01L29/76

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3277 ,  H01L43/10

    摘要： A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.

    摘要翻译： 磁阻效应元件可以被赋予令人满意的磁特性，因为可以抑制退火时的磁阻变化率的劣化，并且磁存储器件包括这种磁阻效应元件以提供优异的写入特性。 磁阻效应元件具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以使电流在垂直于层表面的方向上流动以获得磁阻变化 。 磁存储器件包括磁阻效应元件1，其中该对铁磁层5,7中的至少一个包含结晶温度高于623K的非晶态铁磁材料，并且夹着该磁阻效应元件的位线和字线和 磁阻效应元件在厚度方向上。