摘要:
A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits high gettering ability in spite of its suppressed oxygen concentration, and an epitaxial silicon wafer in which an epitaxial layer grown by using the aforementioned wafer as a substrate wafer has an extremely low heavy metal impurity concentration are produced with high productivity and supplied. The present invention relates to a boron-doped silicon single crystal wafer having a resistivity of from 10 m&OHgr;·cm to 100 m&OHgr;·cm, an antimony-doped silicon single crystal wafer, or a phosphorus-doped silicon single crystal wafer, which are produced by slicing a silicon single crystal ingot grown by the Czochralski method with nitrogen doping. The present invention also relates to an epitaxial wafer, wherein an epitaxial layer is formed on a surface of the aforementioned wafers. The present invention further relates to method for producing them.
摘要:
There are disclosed a method for producing a silicon single crystal wafer for particle monitoring, which comprises growing a silicon single crystal ingot doped with nitrogen by the Czochralski method, and processing the single crystal ingot into wafers to produce the silicon single crystal wafer for particle monitoring; and a silicon single crystal wafer for particle monitoring, which is a silicon single crystal wafer for particle monitoring obtained by processing a silicon single crystal ingot into wafers, which ingot has been produced by the Czochralski method while doped with nitrogen. The method of the present invention can produce silicon single crystal wafers for particle monitoring having few pits on wafer surfaces with high productivity.
摘要:
There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.
摘要:
A detector detects a size of a recording medium stored in a tray of a device. The tray includes a first regulating member that can slide in a width direction of the recording medium, and a second regulating member that can slide in a feed direction of the recording medium. A first movable member engages with the first regulating member, and a second movable member, overlapped by the first movable member, engages with the second regulating member. Both the first and second movable members rotate around a common pivot and include convex members on peripheral edges thereof. Switches are selectively pressed by the convex members when the tray is attached to the device.
摘要:
A paper feed cassette, a recording medium size detector capable of detecting, with a simple constitution and with high accuracy, the size of the recording medium loaded on the paper feed cassette, and an image formation device comprising this recording medium size detector. Side fences and an end fence are slidably provided to a cassette body detachably installed in the body case, and a first movable member which moves in synchronization with the sliding motion of the side fences, and a second movable member which moves in synchronization with the sliding motion of the end fence are provided to the cassette body in an overlapping state. A plurality of synthesized convex portions are formed by overlapping a plurality of first convex portions formed on the first movable member and a plurality of second convex portions formed on the second movable member, and, by sliding the side fences and the end fence in accordance with the size of the recording medium loaded on the cassette body, the width size and position of the synthesized convex portions change in accordance with the size of the recording medium loaded on the cassette body.
摘要:
A method is disclosed for evaluation of the transition region of a silicon epitaxial wafer comprising obtaining the waveform of an interferogram signal for reflected light by irradiation the silicon epitaxial wafer with infrared radiation followed by measurement of the intensity of the light of the interference fringe employing a Michelson interferometer and obtaining the extent of the transition region of the silicon epitaxial wafer by measuring the distance between the maximum peak of the waveform in the side burst region in the interferogram signal and the peak adjacent to said maximum peak of the waveform in the side burst region in the interferogram signal and the distance between the maximum peak and the bottom first coming after said maximum peak of the waveform in the side burst region in the interferogram signal, or the difference in height between the maximum peak and the bottom first coming after said maximum peak of the waveform in the side burst region in the interferogram signal.
摘要:
A paper feed cassette capable of detecting the size of the recording medium loaded on the paper feed cassette, and an image formation device comprising this recording medium size detector. Side fences and an end fence are slidably provided to a cassette body detachably installed in the body case, and a first movable member which moves in synchronization with the sliding motion of the side fences, and a second movable member which moves in synchronization with the sliding motion of the end fence are provided to the cassette body in an overlapping state. A plurality of synthesized convex portions are formed by overlapping a plurality of first convex portions formed on the first movable member and a plurality of second convex portions formed on the second movable member, and, by sliding the side fences and the end fence in accordance with the size of the recording medium loaded on the cassette body, the width size and position of the synthesized convex portions change in accordance with the size of the recording medium loaded on the cassette body.
摘要:
A medium discrimination device includes a transmitted light quantity measurement device arranged to measure a transmitted light quantity in a thickness direction of a medium on a conveyance route, and configured to perform a measurement of the transmitted light quantity at each time the medium is conveyed, a measurement value memory device storing a result of the measurement performed by the transmitted light quantity measurement device, a medium setting device configured to previously set a type of medium to be used, a medium information memory device storing information of a transmitted light quantity assigned to each medium to be set by the medium setting device, and a control processing unit configured to perform paper type detection on a first medium, and double feed detection on following mediums.
摘要:
A paper feeder for use in an image forming apparatus is disclosed. The paper feeder applies vibration to paper sheets being paid out together to thereby reduce an adhering force acting between them. The paper feeder therefore reduces the simultaneous feed of two or more papers to a noticeable degree. An image forming apparatus including the paper feeder is also disclosed.
摘要:
The current invention generally discloses methods, devices and systems for feeding an image-carrying medium of various sizes to an image-generating machine and more particularly discloses the methods, devices and system of applying a desirable initial pressure to a pile of an image-carrying medium towards a predetermined direction according to the medium size and the initial stack size and of continuously decreasing the pressure as the stack size is reduced.