公开(公告)号：US06478883B1

公开(公告)日：2002-11-12

申请号：US09529661

申请日：2000-04-18

申请人： Masaro Tamatsuka ,  Ken Aihara ,  Katsuhiko Miki ,  Hiroshi Takeno ,  Yoshinori Hayamizu

发明人： Masaro Tamatsuka ,  Ken Aihara ,  Katsuhiko Miki ,  Hiroshi Takeno ,  Yoshinori Hayamizu

IPC分类号： H01L2930

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225

摘要： A silicon wafer for epitaxial growth consisting of a highly boron-doped silicon single crystal wafer, an antimony-doped silicon single crystal wafer or a phosphorus-doped silicon single crystal wafer, which allows easy oxygen precipitation and exhibits high gettering ability in spite of its suppressed oxygen concentration, and an epitaxial silicon wafer in which an epitaxial layer grown by using the aforementioned wafer as a substrate wafer has an extremely low heavy metal impurity concentration are produced with high productivity and supplied. The present invention relates to a boron-doped silicon single crystal wafer having a resistivity of from 10 m&OHgr;·cm to 100 m&OHgr;·cm, an antimony-doped silicon single crystal wafer, or a phosphorus-doped silicon single crystal wafer, which are produced by slicing a silicon single crystal ingot grown by the Czochralski method with nitrogen doping. The present invention also relates to an epitaxial wafer, wherein an epitaxial layer is formed on a surface of the aforementioned wafers. The present invention further relates to method for producing them.

摘要翻译： 用于外延生长的硅晶片由高掺硼硅单晶晶片，锑掺杂硅单晶晶片或磷掺杂硅单晶晶片组成，其允许容易的氧沉淀并且表现出高的吸杂能力 抑制氧浓度，并且以高生产率生产其中通过使用上述晶片生长的外延层作为基板晶片具有极低重金属杂质浓度的外延硅晶片。 本发明涉及电阻率为10mOMEGA.cm至100mOMEGA.cm的硼掺杂硅单晶晶片，掺锑硅单晶晶片或磷掺杂硅单晶晶片，其生产 通过用氮掺杂切片通过Czochralski法生长的硅单晶锭。 本发明还涉及外延晶片，其中在上述晶片的表面上形成外延层。 本发明还涉及它们的制造方法。

公开(公告)号：US07189293B2

公开(公告)日：2007-03-13

申请号：US10482099

申请日：2002-06-25

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Hiroshi Takeno ,  Ken Aihara

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Hiroshi Takeno ,  Ken Aihara

IPC分类号： C30B33/02

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： The present invention is a method of producing an annealed wafer wherein a silicon single crystal wafer having a diameter of 200 mm or more produced by the Czochralski (CZ) method is subjected to a high temperature heat treatment in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100–1350° C. for 10–600 minutes, and before the high temperature heat treatmen, a pre-annealing is performed at a temperature less than the temperature of the high temperature heat treatment, so that the growth of slip dislocations is suppressed by growing oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein the generation and growth of slip dislocations generated in a high temperature heat treatment are suppressed and the defect density in the wafer surface layer is lowered even in the case of a silicon single crystal wafer having a large diameter of 200 mm or more, and the annealed wafer.

摘要翻译： 本发明是一种退火晶片的制造方法，其中通过Czochralski（CZ）方法制造的直径为200mm以上的硅单晶晶片在氩气气氛中进行高温热处理， 氢气或其混合气体在1100-1350℃的温度下进行10-600分钟，在高温热处理之前，在低于高温热的温度下进行预退火 从而通过生长氧化物沉淀物来抑制滑移位错的生长。 因此，提供了一种制造退火晶片的方法，其中抑制了在高温热处理中产生的滑移位错的产生和生长，并且即使在硅单晶晶片的情况下晶片表面层中的缺陷密度也降低 具有大直径为200mm以上的退火晶片。

公开(公告)号：US06291874B1

公开(公告)日：2001-09-18

申请号：US09313680

申请日：1999-05-18

申请人： Masaro Tamatsuka ,  Katsuhiko Miki

发明人： Masaro Tamatsuka ,  Katsuhiko Miki

IPC分类号： H01L29167

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/00

摘要： There are disclosed a method for producing a silicon single crystal wafer for particle monitoring, which comprises growing a silicon single crystal ingot doped with nitrogen by the Czochralski method, and processing the single crystal ingot into wafers to produce the silicon single crystal wafer for particle monitoring; and a silicon single crystal wafer for particle monitoring, which is a silicon single crystal wafer for particle monitoring obtained by processing a silicon single crystal ingot into wafers, which ingot has been produced by the Czochralski method while doped with nitrogen. The method of the present invention can produce silicon single crystal wafers for particle monitoring having few pits on wafer surfaces with high productivity.

摘要翻译： 公开了一种用于制造用于粒子监测的硅单晶晶片的方法，其包括通过切克劳斯基法（Czochralski method）生长掺杂有氮的硅单晶锭，并将单晶锭加工成晶片以制备用于粒子监测的硅单晶晶片 ; 以及用于粒子监测的硅单晶晶片，其是通过将硅单晶锭加工成晶片而获得的用于粒子监测的硅单晶晶片，该晶锭已经通过切克劳斯基法以氮掺杂生产。 本发明的方法可以以高生产率制造用于颗粒监测的硅单晶晶片，其在晶片表面上具有很少的凹坑。

公开(公告)号：US6162708A

公开(公告)日：2000-12-19

申请号：US310045

申请日：1999-05-11

申请人： Masaro Tamatsuka ,  Ken Aihara ,  Tomosuke Yoshida

发明人： Masaro Tamatsuka ,  Ken Aihara ,  Tomosuke Yoshida

IPC分类号： C30B15/00 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10S438/916

摘要： There is disclosed a method for producing an epitaxial silicon single crystal wafer comprising the steps of growing a silicon single crystal ingot wherein nitrogen is doped by Czochralski method, slicing the silicon single crystal ingot to provide a silicon single crystal wafer, and forming an epitaxial layer in the surface layer portion of the silicon single crystal wafer. There can be manufactured easily and in high productivity an epitaxial silicon monocrystal wafer which has high gettering capability when a substrate having a low boron concentration is used, a low concentration of heavy metal impurity, and an excellent crystallinity.

摘要翻译： 公开了一种用于制造外延硅单晶晶片的方法，包括以下步骤：生长其中通过切克劳斯基法掺杂氮的硅单晶锭，将硅单晶锭切片以提供硅单晶晶片，以及形成外延层 在硅单晶晶片的表层部分。 当使用低硼浓度的底物，低浓度的重金属杂质和优异的结晶度时，可以容易且高生产率地制造外延硅单晶晶片，其具有高吸杂能力。

公开(公告)号：US06299982B1

公开(公告)日：2001-10-09

申请号：US09313856

申请日：1999-05-18

申请人： Masaro Tamatsuka ,  Akihiro Kimura ,  Katsuhiko Miki ,  Makoto Iida

发明人： Masaro Tamatsuka ,  Akihiro Kimura ,  Katsuhiko Miki ,  Makoto Iida

IPC分类号： C03B1529

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00

摘要： There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.

摘要翻译： 公开了通过用掺杂氮处理通过Czochralski法生长的硅单晶锭制造的硅单晶晶片，其中硅单晶晶片中的长期缺陷的尺寸为70nm以下，制造的硅单晶晶片 通过处理通过掺杂氮气的切克劳斯基法生长的硅单晶锭，生长硅单晶锭，控制冷却速率为1150℃至1080℃，为2.3℃/分钟以上， 制造硅单晶晶片，其中使用掺杂氮气生长硅单晶锭，并将冷却速率控制在1150至1080℃至2.3℃/分钟以上，然后进行处理以提供硅单晶 晶圆。 可以通过CZ法以高生产率制造晶体缺陷生长被抑制的器件用硅单晶晶片。

公开(公告)号：US07147711B2

公开(公告)日：2006-12-12

申请号：US10380818

申请日：2001-09-14

申请人： Masaro Tamatsuka ,  Wei Feig Qu ,  Norihiro Kobayashi

发明人： Masaro Tamatsuka ,  Wei Feig Qu ,  Norihiro Kobayashi

IPC分类号： C30B15/14

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods. Thus, there is provided a DZ-IG silicon wafer in which a DZ layer of high quality is formed, and which can maintain high resistivity even if the wafer is subjected to a heat treatment for device production.

摘要翻译： 本发明提供一种硅晶片的制造方法，其特征在于，使用Czochralski法生长电阻率为100Ω·cm以上，初始间隙氧浓度为10〜25ppma的硅单晶锭， 将硅单晶锭加工成晶片，并对晶片进行热处理，使得晶片中的残余间隙氧浓度应变为8ppma以下，以及制造硅晶片的方法，其包括生长硅单晶 具有100Ω·cm以上的电阻率和8ppma以下的初始间隙氧浓度并通过切克劳斯基法掺杂氮气的晶体锭，将硅单晶锭加工成晶片，并对晶片进行热处理 以在晶片的主体部分中形成氧化物沉淀层，以及通过这些制造方法制造的硅晶片。 因此，提供了一种DZ-IG硅晶片，其中形成了高质量的DZ层，并且即使对晶片进行用于器件制造的热处理也可以保持高电阻率。

公开(公告)号：US06805743B2

公开(公告)日：2004-10-19

申请号：US10333970

申请日：2003-01-24

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

IPC分类号： C30B2502

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： According to the present invention, there are provided a method for producing a silicon single crystal wafer which contains oxygen induced defects by subjecting a silicon single crystal wafer containing interstitial oxygen to a heat treatment wherein the heat treatment includes at least a step of performing a heat treatment using a resistance-heating type heat treatment furnace and a step of performing a heat treatment using a rapid heating and rapid cooling apparatus, and a silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wafer which has a DZ layer of higher quality compared with a conventional wafer in a wafer surface layer part and has oxygen induced defects at a sufficient density in a bulk part and the silicon single crystal wafer.

摘要翻译： 根据本发明，提供了一种通过对含有间隙氧的硅单晶晶片进行热处理而含有氧诱发缺陷的硅单晶晶片的制造方法，其中，热处理至少包括进行热处理的步骤 使用电阻加热型热处理炉的处理以及使用快速加热和快速冷却装置进行热处理的步骤，以及通过该方法制造的硅单晶晶片。 可以提供一种制造硅单晶晶片的方法，其具有与晶片表面层部分中的常规晶片相比具有更高质量的DZ层，并且在体积部分中具有足够密度的氧诱发缺陷，并且硅单晶 晶圆。

公开(公告)号：US06191009B1

公开(公告)日：2001-02-20

申请号：US09264514

申请日：1999-03-08

申请人： Masaro Tamatsuka ,  Makoto Iida ,  Norihiro Kobayashi

发明人： Masaro Tamatsuka ,  Makoto Iida ,  Norihiro Kobayashi

IPC分类号： H01L21322

CPC分类号： C30B15/00 ,  C30B29/06 ,  C30B33/02

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal ingot in which nitrogen is doped is grown by a Czochralski method, sliced to provide a silicon single crystal wafer, and then subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer. According to a further method, a silicon single crystal ingot is grown in which nitrogen is doped by a Czochralski method, with controlling nitrogen concentration, oxygen concentration and cooling rate, and then the silicon single crystal ingot is sliced to provide a wafer. A silicon single crystal wafer is obtained by slicing a silicon single crystal ingot grown by a Czochralski method with doping nitrogen, wherein the depth of a denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 &mgr;m, and the bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1×108 to 2×1010 number/cm3. A CZ silicon wafer is provided, wherein generation of crystal defects on the surface of the wafer, and oxygen precipitation, is accelerated in the bulk portion of the wafer. The controllable range of the depth of the denuded zone and the bulk micro-defect density can be enlarged.

摘要翻译： 在制造硅单晶晶片的方法中，通过切克拉斯基法生长氮掺杂的硅单晶锭，切片以提供硅单晶晶片，然后对其进行热扩散氮 晶片表面。 根据另外的方法，通过切克拉斯基法，通过控制氮浓度，氧浓度和冷却速度，生长氮掺杂的硅单晶锭，然后将硅单晶锭切片以提供晶片。 通过用掺杂氮气切片通过切克劳斯基法生长的硅单晶锭获得硅单晶晶片，其中吸杂热处理或器件制造热处理后的裸露区的深度为2〜12μm， 吸气热处理或器件制造热处理后的缺陷密度为1×10 8〜2×10 10个/ cm 3。 提供了一种CZ硅晶片，其中晶片表面上的晶体缺陷的产生和氧沉淀在晶片的主体部分被加速。 可以扩大裸露区域的深度的可控范围和体积微缺陷密度。

公开(公告)号：US06680260B2

公开(公告)日：2004-01-20

申请号：US10244412

申请日：2002-09-17

申请人： Shoji Akiyama ,  Masaro Tamatsuka

发明人： Shoji Akiyama ,  Masaro Tamatsuka

IPC分类号： H01L2131

CPC分类号： H01L21/76251

摘要： There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.

摘要翻译： 提供一种制造按照Czochralski法生长硅单晶锭的接合SOI晶片的方法，然后将单晶锭切片以制造硅单晶晶片，将硅单晶晶片进行热处理 在1100℃〜1300℃的温度下进行1分钟以上的非氧化性气氛，并在700℃〜1300℃的温度下在氧化气氛中持续热处理1分钟，或 更没有将晶片冷却到低于700℃的温度，以提供其中在表面上形成氧化硅膜的硅单晶晶片，并且将所得晶片用作接合晶片，以及通过以下方式制造的键合SOI晶片： 方法。 可以提供SOI晶片，其SOI结晶缺陷少，表面粗糙度高，生产率高，成品率高，成本低。

公开(公告)号：US06224668B1

公开(公告)日：2001-05-01

申请号：US09313858

申请日：1999-05-18

申请人： Masaro Tamatsuka

发明人： Masaro Tamatsuka

IPC分类号： C30B2500

CPC分类号： H01L21/2007 ,  H01L21/76251

摘要： There are disclosed a method for producing an SOI substrate comprising forming an oxide layer on a surface of at least one silicon wafer among two silicon wafers, closely contacting one wafer with the other wafer so that the oxide layer should be interposed between them, subjecting the wafers to a heat treatment to firmly bond the wafers, and making a device processing side wafer thinner to a desired thickness, wherein a silicon single crystal wafer obtained by growing a silicon single crystal ingot doped with nitrogen by the Czochralski method, and slicing the single crystal ingot into a silicon single crystal wafer is used as the device processing side wafer, and an SOI substrate produced by the method. The present invention provides a method for producing SOI substrates, in particular thin film SOI substrates having an SOI layer thickness of 1 &mgr;m or less, exhibiting a small crystal defect size in the SOI layer, and SOI substrates with low cost and high productivity.

摘要翻译： 公开了一种用于制造SOI衬底的方法，包括在两个硅晶片之间的至少一个硅晶片的表面上形成氧化物层，将一个晶片与另一个晶片紧密接触，使得氧化物层应该介于它们之间， 晶片进行热处理以牢固地结合晶片，并且使器件处理侧晶片更薄到期望的厚度，其中通过利用切克劳斯基法（Czochralski method）生长掺杂有氮的硅单晶锭获得的硅单晶晶片，并将单个晶片 将晶体晶锭用作硅单晶晶片用作器件处理侧晶片，以及通过该方法制造的SOI衬底。 本发明提供一种制造SOI衬底的方法，特别是具有SOI层厚度为1μm或更小的在SOI层中呈现小的晶体缺陷尺寸的SOI薄膜SOI基板和低成本和高生产率的SOI衬底。