公开(公告)号：US08888914B2

公开(公告)日：2014-11-18

申请号：US12761898

申请日：2010-04-16

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01J9/12 ,  H01J1/34 ,  H01J40/06

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性 晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

公开(公告)号：US20070132050A1

公开(公告)日：2007-06-14

申请号：US11511497

申请日：2006-08-29

申请人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

发明人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC分类号： H01L27/14

CPC分类号： H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

摘要： Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

摘要翻译： 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。

公开(公告)号：US20100197069A1

公开(公告)日：2010-08-05

申请号：US12761898

申请日：2010-04-16

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： H01L31/18 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性 晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

公开(公告)号：US07525131B2

公开(公告)日：2009-04-28

申请号：US11511497

申请日：2006-08-29

申请人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

发明人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC分类号： H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/12 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/15 ,  H01L33/00 ,  H01L29/74 ,  H01L31/062 ,  H01L31/00

CPC分类号： H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

摘要： Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

摘要翻译： 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。

公开(公告)号：US20070296335A1

公开(公告)日：2007-12-27

申请号：US10592325

申请日：2005-03-07

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： H01J1/34 ,  H01L21/00

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负的c 晶体的极性方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合层12和粘合剂层12粘合固定在玻璃基板14上的玻璃基板14， 14和氮化物半导体晶体层10。

公开(公告)号：US4075654A

公开(公告)日：1978-02-21

申请号：US735333

申请日：1976-10-26

申请人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

发明人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC分类号： H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC分类号： H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

摘要： Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US3953880A

公开(公告)日：1976-04-27

申请号：US455231

申请日：1974-03-27

申请人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

发明人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC分类号： H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01L27/14 ,  H01L29/161 ,  H01L31/00

CPC分类号： H01J1/34 ,  H01J29/38 ,  H01J9/12 ,  H01J2201/3423

摘要： Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

摘要翻译： 半导体光电子发射器件包括两个或多个不同半导体的混合晶体，形成具有直接跃迁类型的异质结，该直接跃迁类型限定可被光电子激发的第一区域，以及限定禁带宽度大于第二区域的第二区域的间接跃迁类型 第一区域，其表面是光电子发射表面。

公开(公告)号：US4040080A

公开(公告)日：1977-08-02

申请号：US724761

申请日：1976-09-20

申请人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

发明人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC分类号： H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC分类号： H01J1/308 ,  H01J9/022

摘要： A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US4040074A

公开(公告)日：1977-08-02

申请号：US724759

申请日：1976-09-20

申请人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

发明人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC分类号： H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC分类号： H01J9/022 ,  H01J1/308

摘要： A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US4015284A

公开(公告)日：1977-03-29

申请号：US647761

申请日：1976-01-09

申请人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

发明人： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC分类号： H01J1/34 ,  H01J9/12 ,  H01L29/161 ,  H01L27/14

CPC分类号： H01J1/34 ,  H01J9/12 ,  H01J2201/3423

摘要： Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.