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公开(公告)号：US06969538B2
公开(公告)日：2005-11-29
申请号：US09947474
申请日：2001-09-07
IPC分类号： G03F7/38 , B05D3/02 , H01L21/00 , H01L21/027 , H01L21/31
CPC分类号： H01L21/67109 , B05D3/0209 , B05D3/0254 , H01L21/67103
摘要： The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
摘要翻译： 本发明涉及一种热处理基板的方法。 在基板上形成涂膜之后，在预定的高温下烘烤基板。 通过首先将衬底温度从预定的低温升高到低于涂膜反应的预定反应温度的预定中间温度来进行烘烤步骤。 接下来，第二烘烤步骤将基板保持在预定中间温度一段预定的时间，然后是将基板的温度升高到高于预定反应温度的预定高温的第三步骤。 当衬底的温度达到反应温度时，这导致衬底表面内的均匀温度。 因此，均匀地进行由于基板表面内的涂膜的热处理引起的化学反应。
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公开(公告)号：US06659661B2
公开(公告)日：2003-12-09
申请号：US10078370
申请日：2002-02-21
申请人： Masatoshi Deguchi , Eiichi Sekimoto
发明人： Masatoshi Deguchi , Eiichi Sekimoto
IPC分类号： G03D500
CPC分类号： H01L21/67109
摘要： The present invention is a substrate processing apparatus for performing processing of a substrate including: a heat treatment unit provided in a casing of the processing apparatus and having a heating section in which a heat treatment of the substrate is performed; a duct provided on a side part on the heating section side of the casing; and a cooling flow passage provided in the duct for allowing a cooling fluid to flow therethrough. Heat generated from the heating section is prevented from conducting by an air current flowing in the duct, and further the heat is absorbed by the cooling fluid. Therefore, it is possible to prevent the heat from conducting to the outside of the casing.
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公开(公告)号：US07517217B2
公开(公告)日：2009-04-14
申请号：US11229555
申请日：2005-09-20
IPC分类号： F27D5/00
CPC分类号： H01L21/67109 , B05D3/0209 , B05D3/0254 , H01L21/67103
摘要： The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
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公开(公告)号：US20060005420A1
公开(公告)日：2006-01-12
申请号：US11229555
申请日：2005-09-20
IPC分类号： B05D3/02
CPC分类号： H01L21/67109 , B05D3/0209 , B05D3/0254 , H01L21/67103
摘要： The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
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5.发明授权Temperature control for performing heat process in coating/developing system for resist film 有权用于在抗蚀剂膜的涂布/显影系统中进行热处理的温度控制公开(公告)号：US07868270B2
公开(公告)日：2011-01-11
申请号：US12022522
申请日：2008-01-30
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
IPC分类号： H05B3/68
CPC分类号： H01L21/67248 , H01L21/67178 , H01L21/67748
摘要： A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.
摘要翻译： 在用于对放置在热板上的基板进行热处理的热处理装置中，使用温度控制方法来控制热板的温度，使得热板的测量温度符合其目标温度， 其用于涂覆/显影系统中，用于将抗蚀剂涂层施加到基底上以形成抗蚀剂膜，然后在曝光后在抗蚀剂膜上进行显影。 所述方法包括：获取调整数据，所述调整数据用于调整由用于将所述基板的温度从初始温度附近的第一温度升至围绕所述目标温度的第二温度的时间段所限定的到达时间; 并且在基板上开始处理之后，通过使用这样获得的调整数据来调整目标温度。
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公开(公告)号：US07755003B2
公开(公告)日：2010-07-13
申请号：US11965093
申请日：2007-12-27
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
CPC分类号： H01L21/67248
摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。
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公开(公告)号：US20080156785A1
公开(公告)日：2008-07-03
申请号：US11965093
申请日：2007-12-27
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
CPC分类号： H01L21/67248
摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。
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公开(公告)号：US06573031B2
公开(公告)日：2003-06-03
申请号：US10017450
申请日：2001-12-18
IPC分类号： G03F716
CPC分类号： H01L21/67253 , G03F7/168
摘要： A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed. The two-time thermal-process or solvent-density control promotes evaporation of the resist solvent while restricting scattering of a photo-oxidizing agent included in the resist from being promoted beyond the wafer surface, thus achieving coated-film uniformity for the thermal process.
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公开(公告)号：US06185370B2
公开(公告)日：2001-02-06
申请号：US09392639
申请日：1999-09-09
申请人： Eiichi Sekimoto , Mitsuhiro Tanoue
发明人： Eiichi Sekimoto , Mitsuhiro Tanoue
IPC分类号： A01G1306
CPC分类号： H01L21/67017 , H01L21/67109
摘要： An exhaust hole has a size covering not only a first region above a hot plate but also a second region surrounding the first region. A plate ember with a plurality of openings is disposed at the mouth of the exhaust hole. The exhaust hole exhausts air from the first region and the second region, even when the heat processing is not performed. Therefore, a solvent volatilized in the first region is also exhausted from the second region and will not leak outside the apparatus.
摘要翻译： 排气孔的尺寸不仅覆盖热板上方的第一区域，而且覆盖围绕第一区域的第二区域。 具有多个开口的板坯被设置在排气孔的口部。 即使不进行热处理，排气孔也从第一区域和第二区域排出空气。 因此，在第一区域中挥发的溶剂也从第二区域排出，并且不会泄漏到设备外部。
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