公开(公告)号：US08895162B2

公开(公告)日：2014-11-25

申请号：US13236028

申请日：2011-09-19

申请人： Katsuya Nishiyama ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Chunlan Feng

发明人： Katsuya Nishiyama ,  Wu Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01F10/193 ,  G11C11/16 ,  H01L27/22 ,  B82Y25/00 ,  H01F10/28

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/09 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。 第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过 通过第一磁性层，第一非磁性层和第二磁性层。

公开(公告)号：US20120088125A1

公开(公告)日：2012-04-12

申请号：US13236028

申请日：2011-09-19

申请人： Katsuya NISHIYAMA ,  Wu Feng ,  Chunlan Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

发明人： Katsuya NISHIYAMA ,  Wu Feng ,  Chunlan Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

IPC分类号： G11B5/66

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/09 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。 第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过 通过第一磁性层，第一非磁性层和第二磁性层。

公开(公告)号：US08686521B2

公开(公告)日：2014-04-01

申请号：US12716582

申请日：2010-03-03

申请人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

摘要翻译： 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

公开(公告)号：US20100244163A1

公开(公告)日：2010-09-30

申请号：US12716582

申请日：2010-03-03

申请人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/08 ,  H01L27/115

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

摘要翻译： 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向上具有磁各向异性的自旋极化层和设置在该磁性层的一侧的磁性层 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

公开(公告)号：US20090243008A1

公开(公告)日：2009-10-01

申请号：US12409716

申请日：2009-03-24

申请人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222

摘要： A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}a1/2−a2|/a2

摘要翻译： 磁阻元件包括具有在（001）面取向的立方或四方晶体结构的下层，设置在下层上的第一磁性层，具有垂直的磁各向异性，并且具有在（001）面中取向的fct结构， 设置在第一磁性层上的非磁性层以及设置在非磁性层上的具有垂直磁各向异性的第二磁性层。 下层的面内晶格常数a1和第一磁性层的面内晶格常数a2满足以下等式，其中b是第一磁性层的汉堡矢量的大小，nu是第一磁性层的弹性模量 第一磁性层，hc是第一磁性层的厚度。 <？in-line-formula description =“In-line Formulas”end =“lead”？> |√{square root over（2）} a1 / 2-a2 | / a2

公开(公告)号：US08218355B2

公开(公告)日：2012-07-10

申请号：US12409716

申请日：2009-03-24

申请人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222

摘要： A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}×a1/2−a2|/a2

摘要翻译： 磁阻元件包括具有在（001）面取向的立方晶体或四方晶体结构的下层，设置在下层上的第一磁性层，具有垂直的磁各向异性，并且具有在（001）面中取向的fct结构， 设置在第一磁性层上的非磁性层以及设置在非磁性层上的具有垂直磁各向异性的第二磁性层。 下层的面内晶格常数a1和第一磁性层的面内晶格常数a2满足以下等式，其中b是第一磁性层的汉堡矢量的大小，ngr; 是第一磁性层的弹性模量，hc是第一磁性层的厚度。 |√{平方根超过（2）}×a1 / 2-a2 | / a2

公开(公告)号：US08208292B2

公开(公告)日：2012-06-26

申请号：US13342324

申请日：2012-01-03

申请人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及 在第一和第二磁性层之间的第一非磁性层。 第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。 第一磁性层具有指向垂直方向的C轴。 并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

公开(公告)号：US20120099369A1

公开(公告)日：2012-04-26

申请号：US13342324

申请日：2012-01-03

申请人： Tadashi KAI ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Tadashi KAI ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/02 ,  H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及 在第一和第二磁性层之间的第一非磁性层。 第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。 第一磁性层具有指向垂直方向的C轴。 并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

公开(公告)号：US08107281B2

公开(公告)日：2012-01-31

申请号：US12879544

申请日：2010-09-10

申请人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

公开(公告)号：US08665639B2

公开(公告)日：2014-03-04

申请号：US13407039

申请日：2012-02-28

申请人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.

摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。 第一磁性层具有第一和第二铁磁材料的叠层结构。 第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。 第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。 第一铁磁材料的膜厚比第二铁磁材料薄。