摘要:
A microswitch, comprising: a casing consisting of a base casing half and a cover casing half; a plurality of terminal pieces received, at their intermediate parts, in slots provided in the base casing half and extending substantially perpendicularly from a surface opposing a corresponding surface of the cover casing half; a contact mechanism accommodated in a cavity in the casing and electrically connected to the terminal pieces; and a push-button member elastically supported by a spring member and projecting out of the casing for actuating the contact mechanism by movement of the push-button member; the terminal pieces being provided with projections extending from their leading edges, and the slot being provided with a recess for receiving the projection; wherein the slot comprises an external part and an internal part which is narrower than the external part, and a projecting length of the projection is larger than a depth of the internal part. Thereby, the projection may be easily fitted into the recess because the terminal piece is still in the broader part of the slot and can be easily shifted at this stage, but, once the projection is received in the recess, the terminal piece is securely held in position by the narrower part of the slot.
摘要:
This pressure sensitive switch includes a bellows made of corrosion resistant material and with a hollow cylindrical body, which defines a pressure receiving surface on the outer surface of its one closed end portion, and with an open end which is fixedly secured to a fixed member in such a manner that the bellows may expand and contract in its longitudinal direction in response to small changes in the pressure difference between its interior space and the space outside it; a plunger mounted so as to reciprocate in response to the expansion and contraction of the bellows by being acted upon by the inner surface of the bottom portion of the bellows; and a switch assembly which is switched to and fro in response to the reciprocating motion of the plunger. This construction is compact and efficiently functional.
摘要:
An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.
摘要:
A magnetic cassette recorder is disclosed which has a microprocessor having stored therein a standard recording level. Inputting a signal representative of an actual amount of attenuation being offered by a level control rheostat to the input record signal, and a signal representative of the amplitude of the record signal that has traveled through the rheostat, the microprocessor computes the actual amplitude of the record signal before being attenuated by the rheostat. When the thus computed amplitude of the input record signal exceeds the stored standard amplitude, the microprocessor puts out a control signal for adjusting the rheostat to the standard amplitude. The standard recording level stored in the microprocessor is manually variable by switches to the liking of the particular user.
摘要:
A detection apparatus includes a sample holding section, an irradiation means, a detection means, a calculation means, and an evaluation means. The irradiation means irradiates a substance held in the sample holding section with a THz wave. The detection unit detects a THz wave that has passed through or been reflected from the substance. The calculation unit determines a frequency dependence of a property of the substance with respect to the irradiated THz wave and then calculates a slope of a straight line or a slope of a straight line obtained by straight-line approximation of the frequency dependence of the property of the substance. The evaluation unit evaluates the state change of the substance by comparing a previously-obtained slope of a straight line of the frequency dependence of the property of the substance in a standard state and the slope of the straight line of the substance calculated.
摘要:
A switch mechanism for an electric power tool, comprising: a linear slider received in a switch case so as to be moved manually in a first direction against the biasing force of a return spring; an actuating pin carried by the linear slider so as to be moveable along a second direction perpendicular to the first direction; a pair of direction converting levers crossed in the manner of a pair of scissors by a pivot pin mounted on the switch case, the actuating pin being located adjacent to first ends of the direction converting levers; a pair of lateral sliders engaged by second ends of the direction converting levers and allowed to move in the second direction; a first contact set including contacts carried by the linear slider and the wall surface of the switch case for mutual cooperation as the linear slider is moved in the first direction; and a second contact set including contacts carried by the lateral sliders and the wall surface of the switch case for mutual cooperation as the lateral sliders are moved in the second direction; the actuating pins being moveable between the first ends of the direction converting levers so as to selectively actuate one of the direction converting levers and the associated one of the lateral sliders through movement of the linear slider along the first direction via an engagement between the actuating pin and the first end of the associated one of the direction converting levers.
摘要:
For a semiconductor device S, an inspection is performed in a zero-bias state by use of electromagnetic waves generated by irradiation of pulsed laser light, and an inspection range is set with reference to layout information of the semiconductor device S to perform two-dimensional scanning by inspection light L1 of the pulsed laser light within the range. Moreover, with the inspection range of the semiconductor device S arranged at a predetermined position with respect to an optical axis of an optical system, and with a solid immersion lens 36 disposed for the semiconductor device S, by a galvanometer scanner 30 being scanning means, the inspection range of the semiconductor device S is two-dimensionally scanned by the inspection light L1 via the solid immersion lens 36, and an electromagnetic wave emitted from the semiconductor device S is detected by a photoconductive element 40. Accordingly, a semiconductor inspection apparatus and inspection method capable of preferably performing an inspection in a zero-bias state for a semiconductor device is realized.
摘要:
Provided are an analysis method and an analysis apparatus that can perform analysis of a substance and information obtainment with relatively high accuracy and reproducibility without previously allowing a carrier to carry a reagent for a color reaction. In the analysis method and the analysis apparatus, the information on an analyte is obtained by using an electromagnetic wave of a frequency including a frequency band which is at least a part of a frequency range of 30 GHz or more and 30 THz or less. A non-fibrous, isotropic porous material is allowed to hold the analyte, the analyte held by the porous material is irradiated with the electromagnetic wave, a change in the propagation state of the electromagnetic wave due to transmission through or reflection by the porous material is detected and information on the analyte is obtained based on the result of the detection.
摘要:
A detection apparatus includes a sample holding section, an irradiation means, a detection means, a calculation means, and an evaluation means. The irradiation means irradiates a substance held in the sample holding section with a THz wave. The detection unit detects a THz wave passed through or reflected from the substance. The calculation unit determines a frequency dependence of a property of the substance with respect to the irradiated THz wave and then calculates a slope of a straight line or a slope of a straight line obtained by straight-line approximation of the frequency dependence of the property of the substance. The evaluation unit evaluates the state change of the substance by comparing a previously-obtained slope of a straight line of the frequency dependence of the property of the substance in a standard state and the slope of the straight line of the substance calculated.
摘要:
An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.