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公开(公告)号：US07639055B2
公开(公告)日：2009-12-29
申请号：US12083621
申请日：2006-10-17
IPC分类号： H03K3/017
摘要： After an output signal S4 is level-inverted, first and second shorting FETs 55, 56 as a level-inversion inhibiting circuit inhibit level-inversion so that the signal is maintained to the inverted state. Thereafter the inhibition of level-inversion is released, when the signal is subsequently level-inverted at a proper time according to a desired duty ratio of a PWM signal S1. Thus chattering can be prevented and thereby a PWM signal S1 of a stable duty ratio can be generated, even if the level of a reference signal S3 fluctuates due to a noise or the like during vehicle acceleration, for example.
摘要翻译： 在输出信号S4为电平倒相之后，作为电平反转禁止电路的第一和第二短路FET55,56阻止电平反转，使得信号保持为反相状态。 此后，根据PWM信号S1的期望占空比，信号随后在合适的时间被电平反转，释放了电平反转的抑制。 因此，即使参考信号S3的电平例如在车辆加速期间由于噪声等而波动，也可以防止抖动，从而可以产生稳定占空比的PWM信号S1。
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公开(公告)号：US20080258787A1
公开(公告)日：2008-10-23
申请号：US12084209
申请日：2006-10-18
IPC分类号： H03K7/08
CPC分类号： G05F1/575 , H03K3/02337 , H03K3/3565 , H03K7/08
摘要： A parallel circuit 27 of a frequency control circuit 11 is provided as an external circuit. Thereby, the charging time t1 depends on the characteristics of the circuit elements, which are provided in the package of a semiconductor device 70 and therefore subject to manufacturing variations of the semiconductor device 70. The discharging time t2 depends on the parallel circuit 27, which is provided external to the semiconductor device 70 and therefore can be selected to have appropriate characteristics after the semiconductor device 70 has been manufactured. The circuit constants of circuits are set so that the discharging time t2 that depends on the device characteristics of the external parallel circuit 27 is longer than the charging time t1 that depends on the device characteristics of the internal circuits of the semiconductor device 70.
摘要翻译： 频率控制电路11的并联电路27被设置为外部电路。 因此，充电时间t 1取决于设置在半导体器件70的封装中的电路元件的特性，因此受制于半导体器件70的变化。 放电时间t2取决于设置在半导体器件70外部的并联电路27，因此在制造半导体器件70之后可以选择具有适当的特性。 电路的电路常数被设定为使得取决于外部并联电路27的器件特性的放电时间t 2长于取决于半导体器件70的内部电路的器件特性的充电时间t 1。
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公开(公告)号：US07924542B2
公开(公告)日：2011-04-12
申请号：US11920533
申请日：2006-05-25
IPC分类号： H02H7/00
CPC分类号： G05F1/575 , H03K17/063 , H03K17/0822 , H03K2217/0027
摘要： A voltage-dividing circuit 60, which is formed of serially connected voltage-dividing resistors R1, R2, R3, is disposed between the source terminal S of a power MOSFET 15 and the ground. The divided voltage Va at a connecting point A is applied to one of the input terminals of a comparator 62, while the divided voltage Vb at a connecting point B is applied to one of the input terminals of a comparator 64. The other input terminals of the comparators 62, 64 are connected to the connecting line between an external terminal P4, to which an external resistor 12 is connected, and an FET 30.
摘要翻译： 在功率MOSFET 15的源极端子S和地之间设置由串联连接的分压电阻器R1，R2，R3形成的分压电路60。 连接点A处的分压电压Va被施加到比较器62的一个输入端子，而连接点B处的分压电压Vb被施加到比较器64的一个输入端子。另一个输入端子 比较器62,64与连接有外部电阻器12的外部端子P4和FET30之间的连接线连接。
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公开(公告)号：US07545127B2
公开(公告)日：2009-06-09
申请号：US12084209
申请日：2006-10-18
IPC分类号： G05F1/569
CPC分类号： G05F1/575 , H03K3/02337 , H03K3/3565 , H03K7/08
摘要： A parallel circuit 27 of a frequency control circuit 11 is provided as an external circuit. Thereby, the charging time t1 depends on the characteristics of the circuit elements, which are provided in the package of a semiconductor device 70 and therefore subject to manufacturing variations of the semiconductor device 70. The discharging time t2 depends on the parallel circuit 27, which is provided external to the semiconductor device 70 and therefore can be selected to have appropriate characteristics after the semiconductor device 70 has been manufactured. The circuit constants of circuits are set so that the discharging time t2 that depends on the device characteristics of the external parallel circuit 27 is longer than the charging time t1 that depends on the device characteristics of the internal circuits of the semiconductor device 70.
摘要翻译： 频率控制电路11的并联电路27被设置为外部电路。 因此，充电时间t1取决于设置在半导体器件70的封装中的电路元件的特性，并因此受制于半导体器件70的变化。放电时间t2取决于并联电路27，并联电路27 设置在半导体器件70的外部，因此可以在半导体器件70制造之后被选择为具有适当的特性。 电路的电路常数被设定为使得取决于外部并联电路27的器件特性的放电时间t2比取决于半导体器件70的内部电路的器件特性的充电时间t1长。
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公开(公告)号：US20090108894A1
公开(公告)日：2009-04-30
申请号：US12083621
申请日：2006-10-17
IPC分类号： H03K3/017
摘要： After an output signal S4 is level-inverted, first and second shorting FETs 55, 56 as a level-inversion inhibiting circuit inhibit level-inversion so that the signal is maintained to the inverted state. Thereafter the inhibition of level-inversion is released, when the signal is subsequently level-inverted at a proper time according to a desired duty ratio of a PWM signal S1. Thus chattering can be prevented and thereby a PWM signal S1 of a stable duty ratio can be generated, even if the level of a reference signal S3 fluctuates due to a noise or the like during vehicle acceleration, for example.
摘要翻译： 在输出信号S4为电平倒相之后，作为电平反转禁止电路的第一和第二短路FET55,56阻止电平反转，使得信号保持为反相状态。 此后，根据PWM信号S1的期望占空比，信号随后在合适的时间被电平反转，释放了电平反转的抑制。 因此，即使参考信号S3的电平例如在车辆加速期间由于噪声等而波动，也可以防止抖动，从而可以产生稳定占空比的PWM信号S1。
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公开(公告)号：US08054605B2
公开(公告)日：2011-11-08
申请号：US12223652
申请日：2007-02-20
IPC分类号： H02H3/00
CPC分类号： H02M1/08 , H03K17/0822 , H03K17/687
摘要： A gate driver 28 performs a normal charging operation for a power MOSFET 14 by driving a charge pump 90 solely, when a low-level control signal S1 (ON signal) is received during a normal state. On the other hand, if a low-level control signal S1 (ON signal) is received during a load anomaly state, an urgent charge FET 92, as well as the charge pump 90, is turned on when a load current IL exceeds a second anomaly threshold current ILfc, so that a rapid charging operation is performed.
摘要翻译： 当在正常状态期间接收到低电平控制信号S1（ON信号）时，栅极驱动器28仅通过驱动电荷泵90来对功率MOSFET 14进行正常的充电操作。 另一方面，如果在负载异常状态期间接收到低电平控制信号S1（ON信号），则当负载电流IL超过第二时，紧急充电FET92以及电荷泵90接通 异常阈值电流ILfc，从而进行快速充电操作。
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公开(公告)号：US07701686B2
公开(公告)日：2010-04-20
申请号：US11791447
申请日：2005-11-30
IPC分类号： H02H7/00
CPC分类号： H03K17/0822 , H02H3/06 , H03K3/00 , H03K17/00 , H03K2017/0806
摘要： In a power supply controller 10 having a self-protective mechanism for performing, intermittently or periodically, a forced ON-OFF operation which causes a power MOSFET 15 to perform an automatically restorable primary disconnecting operation and a restoring operation when an overcurrent anomaly or an short-circuiting anomaly is detected, an automatically unrestorable secondary disconnecting operation is performed when the accumulated amount of the duration of the forced ON-OFF operation reaches an accumulation threshold.
摘要翻译： 在具有用于执行间歇或周期性地进行强制ON-OFF操作的电源控制器10中，该强制ON-OFF操作使得功率MOSFET 15执行自动恢复的主断开操作和当过电流异常或短路时的恢复操作 检测到电路异常时，当强制ON-OFF操作的持续时间的累积量达到累积阈值时，执行自动不可恢复的二次断开操作。
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公开(公告)号：US20090052096A1
公开(公告)日：2009-02-26
申请号：US12223652
申请日：2007-02-20
IPC分类号： H02H7/00
CPC分类号： H02M1/08 , H03K17/0822 , H03K17/687
摘要： A gate driver 28 performs a normal charging operation for a power MOSFET 14 by driving a charge pump 90 solely, when a low-level control signal S1 (ON signal) is received during a normal state. On the other hand, if a low-level control signal S1 (ON signal) is received during a load anomaly state, an urgent charge FET 92, as well as the charge pump 90, is turned on when a load current IL exceeds a second anomaly threshold current ILfc, so that a rapid charging operation is performed.
摘要翻译： 当在正常状态期间接收到低电平控制信号S1（ON信号）时，栅极驱动器28仅通过驱动电荷泵90来对功率MOSFET 14进行正常的充电操作。 另一方面，如果在负载异常状态期间接收到低电平控制信号S1（ON信号），则当负载电流IL超过第二时，紧急充电FET92以及电荷泵90接通 异常阈值电流ILfc，从而进行快速充电操作。
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公开(公告)号：US20080002325A1
公开(公告)日：2008-01-03
申请号：US11791447
申请日：2005-11-30
IPC分类号： H02H7/00
CPC分类号： H03K17/0822 , H02H3/06 , H03K3/00 , H03K17/00 , H03K2017/0806
摘要： In a power supply controller 10 having a self-protective mechanism for performing, intermittently or periodically, a forced ON-OFF operation which causes a power MOSFEET 15 to perform an automatically restorable primary disconnecting operation and a restoring operation when an overcurrent anomaly or an short-circuiting anomaly is detected, an automatically unrestorable secondary disconnecting operation is performed when the accumulated amount of the duration of the forced ON-OFF operation reaches an accumulation threshold.
摘要翻译： 在具有用于执行间歇或周期性地进行强制ON-OFF操作的电源控制器10中，该强制ON-OFF操作使电源MOSFEET 15执行自动恢复的主断开操作和当过电流异常或短路时的恢复操作 检测到电路异常，当强制ON-OFF操作的持续时间的累积量达到累加阈值时，执行自动不可恢复的二次断开操作。
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公开(公告)号：US20090128106A1
公开(公告)日：2009-05-21
申请号：US11920533
申请日：2006-05-25
IPC分类号： G05F1/573
CPC分类号： G05F1/575 , H03K17/063 , H03K17/0822 , H03K2217/0027
摘要： A voltage-dividing circuit 60, which is formed of serially connected voltage-dividing resistors R1, R2, R3, is disposed between the source terminal S of a power MOSFET 15 and the ground. The divided voltage Va at a connecting point A is applied to one of the input terminals of a comparator 62, while the divided voltage Vb at a connecting point B is applied to one of the input terminals of a comparator 64. The other input terminals of the comparators 62, 64 are connected to the connecting line between an external terminal P4, to which an external resistor 12 is connected, and an FET 30.
摘要翻译： 在功率MOSFET 15的源极端子S和地之间设置由串联连接的分压电阻器R1，R2，R3形成的分压电路60。 连接点A处的分压电压Va被施加到比较器62的一个输入端子，而连接点B处的分压电压Vb被施加到比较器64的一个输入端子。另一个输入端子 比较器62,64与连接有外部电阻器12的外部端子P4和FET30之间的连接线连接。
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