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    Semiconductor laser element and manufacturing method for the same
    1.
    发明授权
    Semiconductor laser element and manufacturing method for the same 有权
    半导体激光元件及其制造方法相同

    公开(公告)号：US07065116B2

    公开(公告)日：2006-06-20

    申请号：US10995780

    申请日：2004-11-22

    申请人： Masayuki Ohta ,  Takahiro Hashimoto ,  Yoshinori Ohitsu ,  Hiroyuki Tsujii ,  Satofumi Kinei ,  Noboru Oshima ,  Shinji Kaneiwa

    发明人： Masayuki Ohta ,  Takahiro Hashimoto ,  Yoshinori Ohitsu ,  Hiroyuki Tsujii ,  Satofumi Kinei ,  Noboru Oshima ,  Shinji Kaneiwa

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/0425 ,  H01S5/2214 ,  H01S2304/04

    摘要： A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.

    摘要翻译： 一种半导体激光元件，包括：第一导电类型的覆层; 活性层 第二导电类型的第一覆盖层; 从第一覆盖层侧开始依次层叠在第二导电类型的第一覆盖层上的由第二导电类型的第二包层和第二导电类型的覆盖层制成的脊; 形成在所述脊的顶部以外的脊侧上的电介质膜; 以及覆盖所述脊的金属电极层，其中所述盖层的底部的宽度和所述第二包层的顶表面的宽度近似相等。

    Semiconductor laser device and manufacturing method therefor
    3.
    发明授权
    Semiconductor laser device and manufacturing method therefor 失效
    半导体激光器件及其制造方法

    公开(公告)号：US06865206B2

    公开(公告)日：2005-03-08

    申请号：US10187445

    申请日：2002-07-02

    申请人： Satofumi Kinei ,  Takahiro Hashimoto

    发明人： Satofumi Kinei ,  Takahiro Hashimoto

    IPC分类号： H01L21/205 ,  H01L21/208 ,  H01S5/042 ,  H01S5/223 ,  H01S5/32 ,  H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/0425 ,  H01S5/3201 ,  H01S2301/00 ,  H01S2301/173 ,  H01S2304/06

    摘要： There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C.

    摘要翻译： 提供了一种半导体激光器件，其几乎不受应变的覆盖层的载流子浓度均匀，并且在其制造中对时间和劳动的要求较低，并且具有稳定的特性。 在n-GaAs衬底上，在700-750℃的温度下，将n型覆盖层，有源层，p型覆盖层和覆盖层层叠在一起。宽度方向两边 通过蚀刻除去p型覆盖层的宽度方向的两侧规定深度部分的宽度方向，形成脊部，并且在宽度方向的两侧形成有电流收缩层。 在700℃或更低的温度下，通过缓慢冷却LPE工艺，在电流收缩层和盖层上形成具有平坦表面的平坦化层。 在平坦化层上，通过MOCVD法在约650℃的温度下形成接触层

    In-factory data control method and data control system
    4.
    发明申请
    In-factory data control method and data control system 审中-公开
    出厂数据控制方法和数据控制系统

    公开(公告)号：US20050213523A1

    公开(公告)日：2005-09-29

    申请号：US11083966

    申请日：2005-03-21

    申请人： Satofumi Kinei

    发明人： Satofumi Kinei

    IPC分类号： G05B19/418 ,  G06Q10/00 ,  G06Q50/00 ,  G06Q50/04 ,  G11B15/52 ,  G11B20/10 ,  H04B7/00

    CPC分类号： G05B19/4185 ,  Y02P90/18

    摘要： Provided is an in-factory data control system that, at a lower cost, can collect output data from a facility having no data transmitting function and data which is not object of automatic transmission, and carry out data control such as processing/analyzing of the collected data. In an in-factory data control system, data outputted to a data output section of a facility having a data output function, but no data transmitting function is inputted to a portable terminal which is portable, the inputted data is transmitted by wireless communication from the portable terminal to a host computer, and the data having received by the host computer is processed and/or analyzed.

    摘要翻译： 提供了一种出厂数据控制系统，其以较低的成本可以从不具有数据发送功能的设备和不是自动传输对象的数据的集合中收集输出数据，并且执行数据控制，例如处理/分析 收集数据。 在工厂内数据控制系统中，输出到具有数据输出功能但没有数据发送功能的设施的数据输出部分的数据被输入到便携式终端，输入的数据通过无线通信从 便携终端到主计算机，并且由主计算机接收的数据被处理和/或分析。

    Method for manufacturing semiconductor laser apparatus
    5.
    发明授权
    Method for manufacturing semiconductor laser apparatus 失效
    半导体激光装置的制造方法

    公开(公告)号：US06919216B2

    公开(公告)日：2005-07-19

    申请号：US10841008

    申请日：2004-05-07

    申请人： Satofumi Kinei

    发明人： Satofumi Kinei

    IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/58 ,  H01L21/603 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024 ,  H01S5/042 ,  H01S5/40

    CPC分类号： H01S5/0224 ,  H01L24/32 ,  H01L2924/12042 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/4031 ,  H01S5/4087 ,  H01L2924/00

    摘要： On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point T2 lower than a melting point T1 of the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point T1 of the first bonding layer but higher than the melting point T2 of the second bonding layer (T1>T>T2) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area.

    摘要翻译： 在半导体激光器件的安装表面部分上，第一接合层被形成为使得发光区域附近的第一区域被暴露。 在副安装座的安装表面部分上形成了具有低于第一接合层的熔点T 1的熔点T 2的第二接合层。 第一接合层和第二接合层在比第一接合层的熔点T1低的温度T下相互压制的状态下加热，但高于第二接合层的熔点T 2（T 1> T> T 2 ）将半导体激光器件连接到子安装座。 当半导体激光器件接合到副安装座时，第一区域用作非接合区域。