公开(公告)号：US20120299083A1

公开(公告)日：2012-11-29

申请号：US13233788

申请日：2011-09-15

申请人： Kenichiro Toratani ,  Masayuki Tanaka ,  Kazuhiro Matsuo

发明人： Kenichiro Toratani ,  Masayuki Tanaka ,  Kazuhiro Matsuo

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括半导体区域，设置在半导体区域上方的隧道绝缘体，设置在隧道绝缘体上方的电荷存储绝缘体，设置在电荷存储绝缘体上方的块绝缘体，设置在上述 所述块绝缘体和包括金属元件的界面区域，所述界面区域设置在从所述半导体区域和所述隧道绝缘体之间的一个界面处，所述隧道绝缘体和所述电荷存储绝缘体，所述电荷存储绝缘体和所述块状绝缘体， 和块绝缘体和控制栅电极。

公开(公告)号：US08525252B2

公开(公告)日：2013-09-03

申请号：US13233788

申请日：2011-09-15

申请人： Kenichiro Toratani ,  Masayuki Tanaka ,  Kazuhiro Matsuo

发明人： Kenichiro Toratani ,  Masayuki Tanaka ,  Kazuhiro Matsuo

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

公开(公告)号：US09355846B2

公开(公告)日：2016-05-31

申请号：US13597337

申请日：2012-08-29

申请人： Masayuki Tanaka ,  Kenichiro Toratani ,  Kazuhiro Matsuo

发明人： Masayuki Tanaka ,  Kenichiro Toratani ,  Kazuhiro Matsuo

IPC分类号： H01L21/02 ,  H01L23/498 ,  H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals; forming, on the first underlayer film, a second underlayer film that contains a second chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals, the second chemical element being an chemical element not contained in the first underlayer film; and forming, on the second underlayer film, a silicon oxide film by a CVD or ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group, and an amino group, or a silicon source of a siloxane system.

摘要翻译： 根据一个实施例，一种形成半导体器件的方法包括：形成第一下层膜，其含有选自锗，铝，钨，铪，钛，钽，镍，钴和碱土金属的第一化学元素 ; 在第一下层膜上形成含有选自锗，铝，钨，铪，钛，钽，镍，钴和碱土金属的第二化学元素的第二下层膜，第二化学元素为 第一底层膜中不含有化学元素; 以及通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或通过CVD或ALD方法在硅的第二下层膜上形成氧化硅膜的硅或硅 硅氧烷体系的来源。

公开(公告)号：US20130241068A1

公开(公告)日：2013-09-19

申请号：US13597337

申请日：2012-08-29

申请人： Masayuki TANAKA ,  Kenichiro Toratani ,  Kazuhiro Matsuo

发明人： Masayuki TANAKA ,  Kenichiro Toratani ,  Kazuhiro Matsuo

IPC分类号： H01L21/02 ,  H01L23/498

CPC分类号： H01L21/02697 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first atom selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals; forming, on the first underlayer film, a second underlayer film that contains a second atom selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals, the second atom being an atom not contained in the first underlayer film; and forming, on the second underlayer film, a silicon oxide film by a CVD or ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group, and an amino group, or a silicon source of a siloxane system.

摘要翻译： 根据一个实施例，一种形成半导体器件的方法包括：形成含有选自锗，铝，钨，铪，钛，钽，镍，钴和碱土金属中的第一原子的第一下层膜; 在第一下层膜上形成含有选自锗，铝，钨，铪，钛，钽，镍，钴和碱土金属的第二原子的第二下层膜，第二原子不是原子 包含在第一下层膜中; 以及通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或通过CVD或ALD方法在硅的第二下层膜上形成氧化硅膜的硅或硅 硅氧烷体系的来源。

公开(公告)号：US20130119531A1

公开(公告)日：2013-05-16

申请号：US13423818

申请日：2012-03-19

申请人： Masayuki Tanaka ,  Kenichiro Toratani

发明人： Masayuki Tanaka ,  Kenichiro Toratani

IPC分类号： H01L23/48 ,  H01L21/283

CPC分类号： H01L27/11578 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/94

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括：形成含有选自铝，硼和碱土金属的原子的底层膜; 或通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或硅源的硅源，通过CVD法或ALD法在下层膜上形成氧化硅膜 硅氧烷体系。

公开(公告)号：US08809935B2

公开(公告)日：2014-08-19

申请号：US13423818

申请日：2012-03-19

申请人： Masayuki Tanaka ,  Kenichiro Toratani

发明人： Masayuki Tanaka ,  Kenichiro Toratani

IPC分类号： H01L29/66 ,  H01L27/115

CPC分类号： H01L27/11578 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/94

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括：形成含有选自铝，硼和碱土金属的原子的底层膜; 或通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或硅源的硅源，通过CVD法或ALD法在下层膜上形成氧化硅膜 硅氧烷体系。

公开(公告)号：US08536699B2

公开(公告)日：2013-09-17

申请号：US13272426

申请日：2011-10-13

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L23/34

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US20120031331A1

公开(公告)日：2012-02-09

申请号：US13272426

申请日：2011-10-13

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/66 ,  B05C11/00 ,  C23C16/455

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US08784568B2

公开(公告)日：2014-07-22

申请号：US13051804

申请日：2011-03-18

申请人： Kenichiro Toratani ,  Takashi Nakao

发明人： Kenichiro Toratani ,  Takashi Nakao

IPC分类号： B08B5/04

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

摘要翻译： 在一个实施例中，一种清洁半导体制造装置的方法包括：通过处理室的供给管供给用于去除沉积在处理室的内壁上的沉积膜的清洁气体，使得来自 每单位时间的供给管大于每单位时间从处理室的排气管排出的净化气体的排出量。 该方法还包括供给惰性气体以向供应管填充惰性气体。

公开(公告)号：US20110232686A1

公开(公告)日：2011-09-29

申请号：US13051804

申请日：2011-03-18

申请人： Kenichiro Toratani ,  Takashi Nakao

发明人： Kenichiro Toratani ,  Takashi Nakao

IPC分类号： B08B5/00 ,  C23F1/08

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

摘要翻译： 在一个实施例中，一种清洁半导体制造装置的方法包括：通过处理室的供给管供给用于去除沉积在处理室的内壁上的沉积膜的清洁气体，使得来自 每单位时间的供给管大于每单位时间从处理室的排气管排出的净化气体的排出量。 该方法还包括供给惰性气体以向供应管填充惰性气体。