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公开(公告)号：US20230096094A1
公开(公告)日：2023-03-30
申请号：US17802969
申请日：2021-02-12
发明人： Angus Bryant
IPC分类号： G01R31/26
摘要： A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the device and a set of corresponding reference currents; measuring, within a predetermined time-interval, Nframe on-state voltages and Nframe corresponding on-state currents of the device to obtain Nframe measurement points, Nframe being an integer number equal to or greater than 2; adapting the set of reference voltages by carrying out a least squares fit to the Nframe measurement points; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device.
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公开(公告)号：US20210318176A1
公开(公告)日：2021-10-14
申请号：US17276896
申请日：2019-09-19
发明人： Angus Bryant
摘要： A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.
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公开(公告)号：US20220037993A1
公开(公告)日：2022-02-03
申请号：US17276877
申请日：2019-09-19
发明人： Angus Bryant
摘要： A method analyzes an operating condition of a power converter. The method includes: providing a sample clock signal; determining repeatedly at least one operating parameter of a power semiconductor device of the power converter; and determining the operating condition of the power converter depending on the at least one determined operating parameter. The repetitions of the determining the at least one operating parameter are synchronous to the sample clock signal. For a given repetition of the determination of the at least one operating parameter, determining the at least one operating parameter includes measuring the at least one operating parameter or identifying a value for the at least one operating parameter from a previous repetition depending on a switching behavior of the power converter within the given repetition.
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公开(公告)号：US10044258B2
公开(公告)日：2018-08-07
申请号：US15519084
申请日：2015-11-16
发明人： Angus Bryant
IPC分类号： H02M3/24 , H02M1/34 , H02M7/5387 , H02M1/088 , H02M7/487 , H02M7/04 , H02M3/04 , H02M5/04 , H02M1/00 , H02M7/483
摘要： The present invention generally relates to a switching cell for a phase leg of a power converter and a method of controlling a power converter to drive a load, and more particularly to a plurality of such switching cells, a phase arm for a power converter, a power converter phase leg, to a power converter for driving a load, and methods of making a power converter. A switching cell for a phase leg of a power converter may comprise: a power switch for conducting a current for driving a load; a commutation path coupled in parallel with the power switch, the commutation path comprising a cell capacitor and an auxiliary switch coupled in series, the auxiliary switch configured to allow control of a conduction state of the commutation path; and a cell inductor coupled to a coupling of the power switch and the commutation path, wherein the switching cell comprises at least one control input line for receiving a control signal, the at least one control input line configured to drive a control terminal of the power switch and a control terminal of the auxiliary switch.
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公开(公告)号：US11262248B2
公开(公告)日：2022-03-01
申请号：US17276896
申请日：2019-09-19
发明人： Angus Bryant
摘要： A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.
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公开(公告)号：US20190131964A1
公开(公告)日：2019-05-02
申请号：US16095698
申请日：2017-04-24
发明人： Angus Bryant
IPC分类号： H03K17/082 , H03K17/18 , H03K17/74
摘要： A power circuit has a power switching device (PSD) to, when in an ON state, conduct current from its first to second terminal; a diode anti-parallel to the PSD that, when in a non-blocking state, conducts current from its anode to its cathode; a drive input line coupled to a device control terminal of the PSD to control its switching; and sense circuitry, having a temperature sensitive current source (TSCS) coupled to a conduction terminal, providing a sense signal from the TSCS to the drive input line to indicate temperature. The TSCS is thermally coupled to the PSD, the temperature indicated is of the PSD, and the conduction terminal is the first or second terminal of the PSD; and/or the TSCS is thermally coupled to the diode, the temperature indicated by the sense signal is of the diode, and the conduction terminal is the anode or cathode of the diode.
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公开(公告)号：US11320321B2
公开(公告)日：2022-05-03
申请号：US17276862
申请日：2019-09-19
发明人： Angus Bryant
摘要： A method determines a characteristic temperature of an electric or electronic system. The method includes: during operation of the system, measuring one or more characteristic parameters of the system; estimating the characteristic temperature based on a thermal model of the system and a first subset of the measured characteristic parameters; predicting a first value for a temperature-sensitive electrical parameter (TSEP) based on a TSEP model and the estimated characteristic temperature; determining a second value for the TSEP based on a second subset of the measured characteristic parameters; comparing the first value and the second value for the TSEP; and adapting the thermal model or the TSEP model based on a result of the comparison.
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公开(公告)号：US20210318179A1
公开(公告)日：2021-10-14
申请号：US17276862
申请日：2019-09-19
发明人： Angus Bryant
摘要： A method determines a characteristic temperature of an electric or electronic system. The method includes: during operation of the system, measuring one or more characteristic parameters of the system; estimating the characteristic temperature based on a thermal model of the system and a first subset of the measured characteristic parameters; predicting a first value for a temperature-sensitive electrical parameter (TSEP) based on a TSEP model and the estimated characteristic temperature; determining a second value for the TSEP based on a second subset of the measured characteristic parameters; comparing the first value and the second value for the TSEP; and adapting the thermal model or the TSEP model based on a result of the comparison.
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公开(公告)号：US11025243B2
公开(公告)日：2021-06-01
申请号：US16095698
申请日：2017-04-24
发明人： Angus Bryant
IPC分类号： H03K17/082 , H03K17/18 , H03K17/74 , H03K17/08
摘要： A power circuit has a power switching device (PSD) to, when in an ON state, conduct current from its first to second terminal; a diode anti-parallel to the PSD that, when in a non-blocking state, conducts current from its anode to its cathode; a drive input line coupled to a device control terminal of the PSD to control its switching; and sense circuitry, having a temperature sensitive current source (TSCS) coupled to a conduction terminal, providing a sense signal from the TSCS to the drive input line to indicate temperature. The TSCS is thermally coupled to the PSD, the temperature indicated is of the PSD, and the conduction terminal is the first or second terminal of the PSD; and/or the TSCS is thermally coupled to the diode, the temperature indicated by the sense signal is of the diode, and the conduction terminal is the anode or cathode of the diode.
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