公开(公告)号：US20160284811A1

公开(公告)日：2016-09-29

申请号：US15034051

申请日：2014-11-04

Applicant: Massachusetts Institute of Technology

Inventor： Lili Yu ,  Han Wang ,  Tomas Palacios

IPC: H01L29/45 ,  H01L29/786 ,  H01L21/3205 ,  H01L21/3215 ,  H01L21/285 ,  H01L21/288

CPC classification number: H01L29/45 ,  H01B1/04 ,  H01L21/28506 ,  H01L21/288 ,  H01L21/32055 ,  H01L21/3215 ,  H01L29/1606 ,  H01L29/413 ,  H01L29/454 ,  H01L29/456 ,  H01L29/786 ,  H01L29/861

Abstract: Device are described that include a semiconductor material layer and at least one graphene-based electrode disposed over a portion of the semiconductor material layer, such that the at least one graphene-based electrode forms an overlap region with the semiconductor material layer. The device includes a means for providing charge carriers in the at least one graphene-based electrode proximate to the overlap region, to reduce a difference between a work function of the at least one graphene-based electrode and an electron affinity of the semiconductor material layer, to reduce a Schottky barrier height between the semiconductor material layer and the at least one graphene-based electrode.

Abstract translation: 描述了包括半导体材料层和设置在半导体材料层的一部分上的至少一个基于石墨烯的电极的装置，使得至少一个基于石墨烯的电极与半导体材料层形成重叠区域。 该器件包括用于在靠近重叠区域的至少一个基于石墨烯的电极中提供电荷载体的装置，以减少至少一个基于石墨烯的电极的功函数与半导体材料层的电子亲和力之间的差异 以降低半导体材料层和至少一个基于石墨烯的电极之间的肖特基势垒高度。