公开(公告)号：US06538267B2

公开(公告)日：2003-03-25

申请号：US09972169

申请日：2001-10-03

申请人： Matteo Bordogna ,  Enrico Laurin ,  Oreste Bernardi

发明人： Matteo Bordogna ,  Enrico Laurin ,  Oreste Bernardi

IPC分类号： H01L31072

CPC分类号： H01L27/14692 ,  H01L27/14647

摘要： The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including, implanting active areas on a semiconductor substrate to obtain a first integrated region of a corresponding photosensor; and forming a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a transparent metallic oxide having a high refraction index and a corresponding high dielectric constant. In this manner, due to the transparency of the high refraction index material, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.

摘要翻译： 本发明涉及一种在标准CMOS工艺中制造光传感器装置的方法，包括：在半导体衬底上注入有源区域，以获得相应的光电传感器的第一整合区域; 并且在光传感器上形成具有不同厚度和折射率层的层叠，以为同一光电传感器提供干涉滤光片。 上述层中的至少一层由具有高折射率和相应的高介电常数的透明金属氧化物形成。 以这种方式，由于高折射率材料的透明度，干涉谐振器的设计变得更加灵活，使得可能使用包括多于一个高折射率层的层叠。

公开(公告)号：US06352876B1

公开(公告)日：2002-03-05

申请号：US09626836

申请日：2000-07-27

申请人： Matteo Bordogna ,  Enrico Laurin ,  Oreste Bernardi

发明人： Matteo Bordogna ,  Enrico Laurin ,  Oreste Bernardi

IPC分类号： H01L2100

CPC分类号： H01L27/14692 ,  H01L27/14647

摘要： The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including, implanting active areas on a semiconductor substrate to obtain a first integrated region of a corresponding photosensor; and forming a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a transparent metallic oxide having a high refraction index and a corresponding high dielectric constant. In this manner, due to the transparency of the high refraction index material, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.

公开(公告)号：US06830951B2

公开(公告)日：2004-12-14

申请号：US10252952

申请日：2002-09-23

申请人： Enrico Laurin ,  Matteo Bordogna ,  Oreste Bernardi

发明人： Enrico Laurin ,  Matteo Bordogna ,  Oreste Bernardi

IPC分类号： H01L2100

CPC分类号： H01L27/14685 ,  H01L27/14621

摘要： The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first, a second and a third integrated region of corresponding photosensors; forming a stack of layers of different thickness and refractive index layers over the photosensors to provide an interferential filter for said photosensors. The stack is obtained by a deposition of a first oxide stack including a first, a second and a third oxide layer over at least one photosensor; moreover, this third oxide layer is obtained by a deposition step of an protecting undoped premetal dielectric layer.

摘要翻译： 本发明涉及一种用于制造标准CMOS工艺中的光传感器装置的方法，该方法至少包括以下阶段：在半导体衬底上注入有源区域以获得至少相应光电传感器的第一，第二和第三集成区域; 在光电传感器上形成不同厚度和折射率层的层叠，以为所述光电传感器提供干涉滤光片。 堆叠通过在至少一个光电传感器上沉积包括第一氧化物层，第二氧化物层和第三氧化物层的第一氧化物堆叠获得; 此外，该第三氧化物层通过保护性未掺杂的金属前介电层的沉积步骤获得。

公开(公告)号：US5663080A

公开(公告)日：1997-09-02

申请号：US524080

申请日：1995-09-06

申请人： Manlio Sergio Cereda ,  Giancarlo Ginami ,  Enrico Laurin ,  Andrea Ravaglia

发明人： Manlio Sergio Cereda ,  Giancarlo Ginami ,  Enrico Laurin ,  Andrea Ravaglia

IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/8247 ,  H01L21/265

CPC分类号： H01L27/11526 ,  H01L21/76216 ,  H01L21/76218 ,  H01L21/823878 ,  H01L27/11546

摘要： A process for producing integrated circuits including the steps of: selectively growing field insulating regions of insulating material extending partly inside a substrate having a given type of conductivity; depositing a polycrystalline silicon layer on the substrate; shaping the polycrystalline silicon layer through a mask; and selectively implanting ions of the same conductivity type as the substrate, using the shaping mask, through the field insulating regions. The implanted ions penetrate the substrate and form channel stopper regions beneath the field insulating regions.

摘要翻译： 一种用于制造集成电路的方法，包括以下步骤：选择性地增加部分地具有给定类型导电性的衬底内的绝缘材料的场绝缘区域; 在衬底上沉积多晶硅层; 通过掩模成形多晶硅层; 并且使用成形掩模通过场绝缘区域选择性地注入与衬底相同的导电类型的离子。 注入的离子穿透衬底并在场绝缘区域下方形成通道阻挡区域。

公开(公告)号：US5486487A

公开(公告)日：1996-01-23

申请号：US139800

申请日：1993-10-19

申请人： Giancarlo Ginami ,  Enrico Laurin ,  Silvia Lucherini ,  Bruno Vajana

发明人： Giancarlo Ginami ,  Enrico Laurin ,  Silvia Lucherini ,  Bruno Vajana

IPC分类号： G11C17/12 ,  H01L27/112 ,  H01L21/266

CPC分类号： H01L27/112 ,  G11C17/12

摘要： A method of manufacture of a low-capacitance programmed cell structure for read-only memory circuits comprises a field-effect transistor having conventional source and drain regions separated by a channel region overlaid by the gate of the transistor. This ROM memory cell is programmed by a channel implant extending only from the source region for a selected distance into the channel region.

摘要翻译： 制造用于只读存储器电路的低电容编程单元结构的方法包括具有由晶体管的栅极重叠的沟道区隔开的常规源极和漏极区域的场效应晶体管。 该ROM存储器单元通过仅从源极区域延伸一个选定距离进入沟道区域的沟道注入来编程。