公开(公告)号：US20090188427A1

公开(公告)日：2009-07-30

申请号：US12421051

申请日：2009-04-09

Applicant: Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

Inventor： Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

IPC: C30B13/16

CPC classification number: C30B29/06 ,  C30B11/003 ,  C30B35/002 ,  H01L31/04 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Abstract translation: 使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。 在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。 该温度曲线对应于在坩埚中心形成的温度梯度。 扁平加热装置的热输出从坩埚的顶端向下端减小。 平面加热装置包括平行加热腹板，其在曲折的过程中延伸。 来自加热腹板的热量输出根据其不同的导体横截面而不同。 为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。

公开(公告)号：US07811383B2

公开(公告)日：2010-10-12

申请号：US12421051

申请日：2009-04-09

Applicant: Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

Inventor： Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

IPC: C30B11/00 ,  C30B21/04

CPC classification number: C30B29/06 ,  C30B11/003 ,  C30B35/002 ,  H01L31/04 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Abstract translation: 使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。 在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。 该温度曲线对应于在坩埚中心形成的温度梯度。 扁平加热装置的热输出从坩埚的顶端向下端减小。 平面加热装置包括平行加热腹板，其在曲折的过程中延伸。 来自加热腹板的热量输出根据其不同的导体横截面而不同。 为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。

公开(公告)号：US08101019B2

公开(公告)日：2012-01-24

申请号：US12334646

申请日：2008-12-15

Applicant: Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

Inventor： Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

IPC: C30B15/14 ,  C30B11/00 ,  C30B21/04 ,  C30B13/00 ,  C30B28/08 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B35/00

CPC classification number: C30B11/003 ,  C30B11/04 ,  C30B29/06 ,  Y10T117/10

Abstract: In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.

Abstract translation: 在制造单晶或多晶半导体材料的方法中，使用垂直梯度冷冻法将半导体原料引入熔融坩埚中并定向凝固。 熔融材料向下流动，使得尚未熔化的原料在熔化的坩埚中逐渐下降。 半导体原料从上方补充到尚未熔化或不完全熔化的至少部分地补偿原料收缩并提高填充水平的半导体原料区域上。 为了尽可能少地减少熔融时间并影响系统中的热条件，待补充的半导体原料被加热至低于其熔融温度的温度，并在加热状态下引入坩埚。

公开(公告)号：US20090158993A1

公开(公告)日：2009-06-25

申请号：US12334646

申请日：2008-12-15

Applicant: Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

Inventor： Uwe Sahr ,  Matthias Mueller ,  Ingo Schwirtlich ,  Frank-Thomas Lentes ,  Frank Buellesfeld

IPC: C30B11/06

CPC classification number: C30B11/003 ,  C30B11/04 ,  C30B29/06 ,  Y10T117/10

Abstract: The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.

Abstract translation: 本发明涉及通过定向凝固制造单晶或多晶半导体材料的方法，其中将块状半导体原料引入熔融坩埚中并在其中熔融并定向凝固，特别是使用垂直梯度冷冻法。 为了防止污染和损坏，半导体原料从熔融坩埚的上端熔化。 熔融材料向下流动，使得尚未熔化的半导体原料在熔融坩埚中逐渐下降。 在这种情况下，附加的半导体原料从熔化坩埚从上方补充到尚未熔化或不完全熔化的半导体原料区域上，以至少部分地补偿半导体原料的体积收缩 材料并增加坩埚的填充水平。 为了尽可能少地减少熔化时间并影响系统中的热条件，通过有目的地将热量引导到低于半导体原料的熔​​融温度的温度来加热待补充的半导体原料 并以加热状态引入容器。

公开(公告)号：US20090047203A1

公开(公告)日：2009-02-19

申请号：US12191807

申请日：2008-08-14

Applicant: Matthias Mueller ,  Uwe Sahr

Inventor： Matthias Mueller ,  Uwe Sahr

IPC: C01B33/00 ,  C30B11/14

CPC classification number: C30B11/14 ,  C30B29/06

Abstract: The invention relates to the production of bulky monocrystalline metal or semi-metal bodies, in particular of a monocrystalline Si ingot, using the vertical gradient freeze (VGF) method by directional solidification of a melt in a melting crucible having a polygonal basic shape.According to the invention, the entire bottom of the melting crucible is completely covered with a thin seed crystal plate made of the monocrystalline semi-metal or metal. Throughout the procedure, the bottom of the melting crucible is kept below the melting temperature of the semi-metal or metal in order to prevent melting of the seed crystal plate.Monocrystalline ingots produced in this way are distinguished by a low average dislocation density of for example less than 105 cm−2, allowing the production of very efficient monocrystalline Si solar cells.

Abstract translation: 本发明涉及使用垂直梯度冷冻（VGF）法通过在具有多边形基本形状的熔化坩埚中熔体的定向凝固来生产大体积单晶金属或半金属体，特别是单晶Si锭。 根据本发明，熔融坩埚的整个底部完全被由单晶半金属或金属制成的薄晶种板覆盖。 在整个过程中，熔融坩埚的底部保持低于半金属或金属的熔化温度，以防止晶种板熔化。 以这种方式生产的单晶锭的特征在于低平均位错密度例如小于105cm -2，允许生产非常有效的单晶Si太阳能电池。

公开(公告)号：US07597756B2

公开(公告)日：2009-10-06

申请号：US11692005

申请日：2007-03-27

Applicant: Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

Inventor： Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

IPC: C30B15/20

CPC classification number: C30B29/06 ,  C30B11/003 ,  C30B35/002 ,  H01L31/04 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucible, which has a number of flat heating elements with a meandering course disposed on side faces of the crucible. The heating jacket generates an inhomogeneous temperature profile corresponding to a temperature gradient in the center of the crucible. The flat heating elements preferably comprise parallel heating webs, whose heat output is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating elements can be formed from a plurality of interconnected individual segments.

Abstract translation: 通过使用垂直梯度冷冻方法制造单晶或多晶坯料，特别是硅坯料的方法包括提供具有矩形或方形截面的坩埚和设置在坩埚周围的加热套，其具有多个 具有设置在坩埚的侧面上的曲折的平面加热元件。 加热套产生对应于坩埚中心的温度梯度的不均匀温度曲线。 扁平加热元件优选地包括平行加热腹板，其热输出通过改变导体横截面来设定。 为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域设有横截面的收缩。 扁平的加热元件可以由多个相互连接的各个段形成。

公开(公告)号：US20070266931A1

公开(公告)日：2007-11-22

申请号：US11692005

申请日：2007-03-27

Applicant: Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

Inventor： Matthias Mueller ,  Markus Finkbeiner ,  Uwe Sahr ,  Ingo Schwirtlich ,  Michael Clauss

IPC: C30B13/16

CPC classification number: C30B29/06 ,  C30B11/003 ,  C30B35/002 ,  H01L31/04 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: The invention relates to a device and a method for the production of monocrystalline or multicrystalline materials using the vertical-gradient-freeze method, in particular silicon for applications in photovoltaics. According to the invention a low amount of wastage is achieved in that the cross section of the crucible is polygonal, in particular rectangular or square-shaped. Disposed around the circumference of the crucible there is a flat or planar heating element, in particular a jacket heater, which generates an inhomogeneous temperature profile. This corresponds to the temperature gradient formed in the centre of the crucible. The heat output of the flat heating element decreases going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating element can be formed from a plurality of interconnected individual segments.

Abstract translation: 本发明涉及使用垂直梯度冷冻法，特别是用于光伏发电的硅的单晶或多晶材料的生产的装置和方法。 根据本发明，实现了少量的浪费，其中坩埚的横截面是多边形的，特别是矩形或正方形。 围绕坩埚的圆周布置有平坦或平面的加热元件，特别是夹套加热器，其产生不均匀的温度分布。 这对应于在坩埚中心形成的温度梯度。 扁平加热元件的热​​输出从坩埚的顶端到底端减小。 扁平加热元件包括多个平行的加热幅材，其在垂直或水平的曲折过程中延伸。 通过改变导体横截面来设定来自腹板的热量输出。 为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域设有横截面的收缩。 扁平加热元件可以由多个相互连接的各个部分形成。

公开(公告)号：US10726816B2

公开(公告)日：2020-07-28

申请号：US16514698

申请日：2019-07-17

Applicant: Matthias Mueller

Inventor： Matthias Mueller

IPC: G10D7/06 ,  G10D9/00 ,  G10H1/00

Abstract: This invention involves the field of tactile control of electronic devices using a sensor that transduces both air pressure and device positional orientation into a set of digitally encoded commands. The invention involves using as input the physical action taken on a musical instrument and generating control information using that input.

公开(公告)号：US09352794B2

公开(公告)日：2016-05-31

申请号：US13996811

申请日：2011-10-27

Applicant: Christoph Grevener ,  Uwe Habisreitinger ,  Andreas Krevet ,  Matthias Mueller ,  Thomas Stark ,  Konrad Wirth ,  Michael Zuern

Inventor： Christoph Grevener ,  Uwe Habisreitinger ,  Andreas Krevet ,  Matthias Mueller ,  Thomas Stark ,  Konrad Wirth ,  Michael Zuern

IPC: B62D65/04 ,  B62D25/20 ,  B62D65/10 ,  B65D65/12 ,  B62D24/00

CPC classification number: B62D65/04 ,  B62D24/00 ,  B62D25/2009 ,  B62D65/10 ,  B62D65/12 ,  B65D65/12 ,  Y10T29/49622 ,  Y10T29/49828 ,  Y10T29/49829 ,  Y10T29/49904

Abstract: A method for assembling motor vehicles in which a drive train, chassis and floor module are pre-assembled and then connected to a shell of the motor vehicle. The floor module is pre-assembled in a first pre-assembly process and the drive train and the chassis are pre-assembled in a second pre-assembly process. The floor module, the drive train and the chassis are combined and then connected to the shell of the motor vehicle.

Abstract translation: 一种用于组装机动车辆的方法，其中传动系，底盘和地板模块被预组装，然后连接到机动车辆的壳体。 地板模块在第一预组装过程中预先组装，并且传动系和底盘在第二预组装过程中被预组装。 地板模块，传动系和底盘组合在一起，然后连接到机动车辆的外壳。

公开(公告)号：US20140044474A1

公开(公告)日：2014-02-13

申请号：US13261719

申请日：2012-02-17

Applicant: Dennis Broemstrup ,  Siegfried Boehme ,  Heiko Holighaus ,  Matthias Mueller ,  Michael Schnakenberg

Inventor： Dennis Broemstrup ,  Siegfried Boehme ,  Heiko Holighaus ,  Matthias Mueller ,  Michael Schnakenberg

IPC: H02B1/30

CPC classification number: H02B1/30 ,  H02B1/303 ,  Y10T403/42

Abstract: The invention relates to a mounting frame for a switchgear cabinet or a rack, comprising mounting pieces which are arranged, as corner pieces, in the four corner sections of a rectangle or square that extends in an x-y plane, said mounting pieces being produced in a respective shaping process and having outer first and second mounting faces which extend in the x direction and in the y direction at a right angle thereto and which extend in a space direction z at a right angle to the x-y plane, and are provided with hollow spaces which are at least partially surrounded by wall parts and/or bores that are oriented in the z direction. The mounting frame further comprises intermediate elements which extend between the mounting pieces in the x direction and in the y direction and the end sections of which are fastened to the mounting pieces. The mounting pieces have wall sections which extend in parallel to the x-y plane, thus making assembly easier.

Abstract translation: 本发明涉及一种用于开关柜或机架的安装框架，其包括安装件，其以在XY平面中延伸的矩形或正方形的四个角部分中设置为角件，所述安装件以 并且具有在x方向和y方向上以与其成直角的方式延伸的外部第一和第二安装面，并且在与xy平面成直角的空间方向z上延伸，并且设置有中空空间 其至少部分地被在z方向上定向的壁部分和/或孔部分包围。 安装框架还包括在x方向和y方向上在安装件之间延伸并且其端部被紧固到安装件的中间元件。 安装件具有平行于x-y平面延伸的壁部分，从而使装配更容易。