GST CMP slurries
    1.
    发明授权
    GST CMP slurries 有权
    GST CMP浆料

    公开(公告)号:US08778211B2

    公开(公告)日:2014-07-15

    申请号:US13551423

    申请日:2012-07-17

    摘要: The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.

    摘要翻译: 本发明提供了适用于抛光包含锗 - 锑 - 碲(GST)合金的基材的化学机械抛光(CMP)组合物。 本发明的CMP组合物是包含颗粒磨料,水溶性表面活性剂,络合剂和腐蚀抑制剂的水性浆料。 基于颗粒磨料的ζ电位来选择表面活性材料(例如阳离子,阴离子或非离子)的离子特性。 还公开了利用该组合物研磨含GST合金的基材的CMP方法。

    Composition and method for polishing aluminum semiconductor substrates
    2.
    发明授权
    Composition and method for polishing aluminum semiconductor substrates 有权
    用于抛光铝半导体衬底的组合物和方法

    公开(公告)号:US08623766B2

    公开(公告)日:2014-01-07

    申请号:US13237881

    申请日:2011-09-20

    IPC分类号: H01L21/302 H01L21/461

    摘要: The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyldiphenyloxide disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions.

    摘要翻译: 本发明提供了包含涂覆的α-氧化铝颗粒,有机羧酸和水的化学机械抛光组合物。 本发明还提供了一种化学机械抛光组合物,其包括抛光组合物中具有负ζ电位的磨料,有机羧酸,至少一种烷基二苯醚二磺酸盐表面活性剂和水,其中抛光组合物不再含有杂环化合物。 研磨剂在抛光组合物中胶体稳定。 本发明还提供了用前述抛光组合物抛光衬底的方法。

    COMPOSITION AND METHOD FOR POLISHING ALUMINUM SEMICONDUCTOR SUBSTRATES
    3.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING ALUMINUM SEMICONDUCTOR SUBSTRATES 有权
    用于抛光铝半导体衬底的组合物和方法

    公开(公告)号:US20130072021A1

    公开(公告)日:2013-03-21

    申请号:US13237881

    申请日:2011-09-20

    IPC分类号: H01L21/306 C09K13/00

    摘要: The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyldiphenyloxide disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions.

    摘要翻译: 本发明提供了包含涂覆的α-氧化铝颗粒,有机羧酸和水的化学 - 机械抛光组合物。 本发明还提供了一种化学机械抛光组合物,其包括抛光组合物中具有负ζ电位的磨料,有机羧酸,至少一种烷基二苯醚二磺酸盐表面活性剂和水,其中抛光组合物不再含有杂环化合物。 研磨剂在抛光组合物中胶体稳定。 本发明还提供了用前述抛光组合物抛光衬底的方法。