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公开(公告)号：US08778211B2
公开(公告)日：2014-07-15
申请号：US13551423
申请日：2012-07-17
申请人： Matthias Stender , Glenn Whitener , Chul Woo Nam
发明人： Matthias Stender , Glenn Whitener , Chul Woo Nam
IPC分类号： C09K13/00 , C09K13/04 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436
摘要： The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.
摘要翻译： 本发明提供了适用于抛光包含锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。 本发明的CMP组合物是包含颗粒磨料，水溶性表面活性剂，络合剂和腐蚀抑制剂的水性浆料。 基于颗粒磨料的ζ电位来选择表面活性材料（例如阳离子，阴离子或非离子）的离子特性。 还公开了利用该组合物研磨含GST合金的基材的CMP方法。
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公开(公告)号：US20140024216A1
公开(公告)日：2014-01-23
申请号：US13551423
申请日：2012-07-17
申请人： Matthias STENDER , Glenn WHITENER , Chul Woo NAM
发明人： Matthias STENDER , Glenn WHITENER , Chul Woo NAM
IPC分类号： C09K13/00 , H01L21/306
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436
摘要： The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.
摘要翻译： 本发明提供了适用于抛光包含锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。 本发明的CMP组合物是包含颗粒磨料，水溶性表面活性剂，络合剂和腐蚀抑制剂的水性浆料。 基于颗粒磨料的ζ电位来选择表面活性材料（例如阳离子，阴离子或非离子）的离子特性。 还公开了利用该组合物研磨含GST合金的基材的CMP方法。
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公开(公告)号：US20090032006A1
公开(公告)日：2009-02-05
申请号：US11888264
申请日：2007-07-31
申请人： Chul Woo Nam , Kevin Moeggenborg
发明人： Chul Woo Nam , Kevin Moeggenborg
IPC分类号： B28D1/08
CPC分类号： B28D5/007 , C09G1/02 , C09K3/1463 , Y02P70/179
摘要： This invention provides a method for increasing the cutting performance of a wire saw, in cutting a substrate, by increasing the association of the abrasive particles in the cutting slurry and the cutting wire, the enhancement being caused by the use of thickening agents in the cutting slurry or by increasing the attraction of the abrasive particles to the cutting wire.
摘要翻译： 本发明提供了一种通过增加切割浆料和切割丝中的磨料颗粒的关联性来提高线锯在切割基材中的切割性能的方法，这是由于在切割中使用增稠剂引起的增强 浆料或通过增加磨料颗粒到切割丝线的吸引力。
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公开(公告)号：US6032304A
公开(公告)日：2000-03-07
申请号：US171722
申请日：1998-10-23
申请人： Chul-woo Nam
发明人： Chul-woo Nam
CPC分类号： E04H4/145
摘要： A swimming pool is provided that is filled with water containing salt to give buoyancy to a swimmer and to enable the swimmer to effortlessly float. The pool is formed of two or more sections with each section filled with the swimming pool water having differing densities of salt to provide for different buoyancy levels therein. Further, the water in the swimming pool also contains magnesium chloride, calcium sulfate, potassium sulfate and magnesium bromide.
摘要翻译： PCT No.PCT / KR97 / 00063 Sec。 371 1998年10月23日第 102（e）日期1998年10月23日PCT 1997年4月24日PCT公布。 公开号WO97 / 40246 日期1997年10月30日提供一个游泳池，充满含盐的水，给游泳者带来浮力，并使游泳者轻松浮动。 游泳池由两个或多个部分形成，每个部分填充有不同密度的盐的游泳池水，以在其中提供不同的浮力水平。 此外，游泳池内的水也含有氯化镁，硫酸钙，硫酸钾和溴化镁。
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公开(公告)号：US08268034B2
公开(公告)日：2012-09-18
申请号：US12995870
申请日：2010-10-20
申请人： Young Yoon Choi , Sang Bae Kim , Chang Youl Suh , Chul Woo Nam
发明人： Young Yoon Choi , Sang Bae Kim , Chang Youl Suh , Chul Woo Nam
IPC分类号： C22C38/12
摘要： Provided is a manufacturing method of ferromolybdenum from molybdenite concentrate, and more particularly, a manufacturing method of ferromolybdenum with copper content of 0.5% or less from molybdenite with high copper content without carrying out a separate copper removing process by putting molybdenite, aluminum metal and iron metal, in a heating furnace and reacting them at high temperature to manufacture the ferro molybdenum at the lower portion thereof, forming a slag using aluminum sulfide and iron sulfide as the main components at the upper portion thereof, and putting most of the copper (80 to 95%) existing in the molybdenite in a slag layer. The exemplary embodiment can shorten a process as compared to a metallothermic reduction (Thermit) method of the related art and reduce the consumption of a reducing agent, i.e., aluminum.
摘要翻译： 本发明提供来自辉钼矿精矿的钼铁的制造方法，特别是铜含量高于铜含量为0.5％以下的铁钼的制造方法，不进行通过将辉钼矿，铝金属和铁 金属，在加热炉中并在高温下使其反应以在其下部制造铁钼，在其上部使用硫化铝和硫化铁作为主要成分形成炉渣，并将大部分铜（80 至95％）存在于辉钼矿中的渣层中。 与现有技术的金属热还原（Thermit）方法相比，示例性实施方案可以缩短工艺，并且减少还原剂即铝的消耗。
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公开(公告)号：US20120174709A1
公开(公告)日：2012-07-12
申请号：US12995870
申请日：2010-10-20
申请人： Young Yoon Choi , Sang Bae Kim , Chang Youl Suh , Chul Woo Nam
发明人： Young Yoon Choi , Sang Bae Kim , Chang Youl Suh , Chul Woo Nam
摘要： Provided is a manufacturing method of ferromolybdenum from molybdenite concentrate, and more particularly, a manufacturing method of ferromolybdenum with copper content of 0.5% or less from molybdenite with high copper content without carrying out a separate copper removing process by putting molybdenite, aluminum metal and iron metal, in a heating furnace and reacting them at high temperature to manufacture the ferro molybdenum at the lower portion thereof, forming a slag using aluminum sulfide and iron sulfide as the main components at the upper portion thereof, and putting most of the copper (80 to 95%) existing in the molybdenite in a slag layer. The exemplary embodiment can shorten a process as compared to a metallothermic reduction (Thermit) method of the related art and reduce the consumption of a reducing agent, i.e., aluminum.
摘要翻译： 本发明提供来自辉钼矿精矿的钼铁的制造方法，特别是铜含量高于铜含量为0.5％以下的铁钼的制造方法，不进行通过将辉钼矿，铝金属和铁 金属，在加热炉中并在高温下使其反应以在其下部制造铁钼，在其上部使用硫化铝和硫化铁作为主要成分形成炉渣，并将大部分铜（80 至95％）存在于辉钼矿中的渣层中。 与现有技术的金属热还原（Thermit）方法相比，示例性实施方案可以缩短工艺，并且减少还原剂即铝的消耗。
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公开(公告)号：US08157876B2
公开(公告)日：2012-04-17
申请号：US12317254
申请日：2008-12-19
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , C09C1/02 , C10M169/00 , C10M173/00
CPC分类号： B28D5/007 , B28D1/08 , C09K3/1463 , C10M125/08 , C10M173/02 , C10M2201/061 , C10M2201/10 , C10M2209/04 , C10M2209/12 , C10M2217/028 , C10N2240/401 , Y02P70/179
摘要： A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s−1.
摘要翻译： 本发明的线切割液组合物包含约25至约75重量％的悬浮在含有载体的水性载体中的颗粒磨料，所述颗粒磨料包含聚合物粘度调节剂，其包含大部分非离子单体单元的聚合物（优选为100摩尔％ 非离子单体单元）具有至少约5kDa的数均分子量（Mn），并且以足以提供组合物的Brookfield粘度在约50至约1000范围内的浓度存在于组合物中 cP，例如50至约700cP，在约25℃下以约60rpm的主轴转速进行。 在一个实施方案中，粘度调节剂包含重均分子量（Mw）为至少约200kDa的聚合物。 当使用200kDa或更大的Mw的粘度调节剂时，优选的切线切割方法是通过以不大于约104s -1的较低剪切速率操作的泵和喷嘴循环施加切削液。
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公开(公告)号：US6051477A
公开(公告)日：2000-04-18
申请号：US734920
申请日：1996-10-22
申请人： Chul-Woo Nam
发明人： Chul-Woo Nam
IPC分类号： H01L21/02 , H01L21/304 , H01L21/306 , H01L21/76 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76251
摘要： A method of fabricating a SOI wafer is disclosed, which comprises the steps of: providing a silicon-on-insulator wafer wherein an oxide is formed between a base substrate and a devise substrate; thinning the device substrate to form a Si layer; etching the Si layer to expose the surface of the oxide film, to form trenches; forming polishing stoppers within the trenches, each polishing stopper have a smaller thickness in its center portion and a greater thickness in its outer portion; heat-treating the polishing stopper; and polishing, via chemical and mechanical polishing, the Si layer using the polishing stopper to form a device formation layer.
摘要翻译： 公开了制造SOI晶片的方法，其包括以下步骤：提供绝缘体上硅晶片，其中氧化物形成在基底基板和设计基板之间; 使器件基板变薄以形成Si层; 蚀刻Si层以暴露氧化膜的表面，形成沟槽; 在沟槽内形成抛光止动件，每个抛光止动件在其中心部分具有较小的厚度，在其外部具有更大的厚度; 热处理抛光塞; 并通过化学和机械抛光使用抛光止动器研磨Si层以形成器件形成层。
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公开(公告)号：US20090126713A1
公开(公告)日：2009-05-21
申请号：US12317254
申请日：2008-12-19
IPC分类号： B28D1/08 , C10M169/04 , C10M145/40 , C10M149/10 , C10M145/04 , C10M125/26 , C10M155/02 , C10M149/20
CPC分类号： B28D5/007 , B28D1/08 , C09K3/1463 , C10M125/08 , C10M173/02 , C10M2201/061 , C10M2201/10 , C10M2209/04 , C10M2209/12 , C10M2217/028 , C10N2240/401 , Y02P70/179
摘要： A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s−1.
摘要翻译： 本发明的线切割液组合物包含约25至约75重量％的悬浮在含有载体的水性载体中的颗粒磨料，所述颗粒磨料包含聚合物粘度调节剂，其包含大部分非离子单体单元的聚合物（优选为100摩尔％ 非离子单体单元）具有至少约5kDa的数均分子量（Mn），并且以足以提供组合物的Brookfield粘度在约50至约1000范围内的浓度存在于组合物中 cP，例如50至约700cP，在约25℃下以约60rpm的主轴转速进行。 在一个实施方案中，粘度调节剂包含重均分子量（Mw）为至少约200kDa的聚合物。 当使用200kDa或更大的Mw的粘度调节剂时，优选的切线切割方法是通过以不大于约104s -1的较低剪切速率操作的泵和喷嘴循环施加切削液。
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10.发明授权公开(公告)号：US06663480B2
公开(公告)日：2003-12-16
申请号：US09878213
申请日：2001-06-12
申请人： Hae-Do Jeong , Ho-Sik Lee , Ho-Youn Kim , Chul-Woo Nam , Sang-Ick Lee , Jae-Hong Kim
发明人： Hae-Do Jeong , Ho-Sik Lee , Ho-Youn Kim , Chul-Woo Nam , Sang-Ick Lee , Jae-Hong Kim
IPC分类号： B24D1100
CPC分类号： B24B37/22 , B24B37/24 , B24D3/344 , B24D11/001
摘要： The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.
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