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公开(公告)号：US20060091424A1
公开(公告)日：2006-05-04
申请号：US10978216
申请日：2004-10-29
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/115 , H01L27/11568
摘要： Semiconductor Device And Method Of Producing A Semiconductor Device A semiconductor device comprises a memory cell (160) including a transistor body (150) having a top surface (111) and including a first doping area (10a) and a second doping area (10b) with a channel region (110) in between. The memory cell (160) further includes a gate electrode (3a) arranged above the channel region (110) and separated therefrom by a dielectric layer (2a). An oxide-nitride-oxide layer (66) has first portions (661) and second portions (662). The first portions (661) of the oxide-nitride-oxide layer (66) are arranged above at least parts of the first and second doping areas (10a, 10b) and are substantially parallel to the top surface (111) of the transistor body (150). The second portions (662) of the oxide-nitride-oxide layer (66) are adjacent to the gate electrode (3a) and extend in a direction not substantially parallel to the top surface (111) of the transistor body (150).
摘要翻译： 半导体器件和半导体器件的制造方法半导体器件包括存储单元（160），其包括具有顶表面（111）并包括第一掺杂区域（10a）和第二掺杂区域（10）的晶体管本体（150） b）在其间具有通道区域（110）。 存储单元（160）还包括布置在沟道区（110）上方并通过电介质层（2a）分离的栅电极（3a）。 氧化物 - 氧化物 - 氧化物层（66）具有第一部分（661）和第二部分（662）。 氧化物 - 氮化物 - 氧化物层（66）的第一部分（661）布置在第一和第二掺杂区域（10a，10b）的至少一部分上方并且基本上平行于 晶体管体（150）。 氧化物 - 氧化物 - 氧化物层（66）的第二部分（662）与栅电极（3a）相邻并且在基本上不平行于晶体管本体（150）的顶表面（111）的方向上延伸。
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公开(公告)号：US07238974B2
公开(公告)日：2007-07-03
申请号：US10978216
申请日：2004-10-29
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L27/11568
摘要： A semiconductor device comprises a memory cell (160) including a transistor body (150) having a top surface (111) and including a first doping area (10a) and a second doping area (10b) with a channel region (110) in between. The memory cell (160) further includes a gate electrode (3a) arranged above the channel region (110) and separated therefrom by a dielectric layer (2a). An oxide-nitride-oxide layer (66) has first portions (661) and second portions (662). The first portions (661) of the oxide-nitride-oxide layer (66) are arranged above at least parts of the first and second doping areas (10a, 10b) and are substantially parallel to the top surface (111) of the transistor body (150). The second portions (662) of the oxide-nitride-oxide layer (66) are adjacent to the gate electrode (3a) and extend in a direction not substantially parallel to the top surface (111) of the transistor body (150).
摘要翻译： 半导体器件包括存储单元（160），该存储单元包括具有顶表面（111）并包括第一掺杂区（10a）的晶体管本体（150）和具有沟道区（110）的第二掺杂区（10b） 之间。 存储单元（160）还包括布置在沟道区（110）上方并通过电介质层（2a）分离的栅电极（3a）。 氧化物 - 氧化物 - 氧化物层（66）具有第一部分（661）和第二部分（662）。 氧化物 - 氮化物 - 氧化物层（66）的第一部分（661）布置在第一和第二掺杂区域（10a，10b）的至少一部分上方并且基本上平行于 晶体管体（150）。 氧化物 - 氧化物 - 氧化物层（66）的第二部分（662）与栅电极（3a）相邻并且在基本上不平行于晶体管本体（150）的顶表面（111）的方向上延伸。
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3.发明申请X-RAY RADIATION DETECTOR FOR DETECTING IONIZING RADIATION, IN PARTICULAR FOR USE IN A CT SYSTEM 有权用于检测放射性的X射线辐射检测器，特别适用于CT系统公开(公告)号：US20100246758A1
公开(公告)日：2010-09-30
申请号：US12731179
申请日：2010-03-25
摘要： An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.
摘要翻译： 公开了一种用于检测电离辐射的X射线辐射检测器，特别是用于CT系统中的多个检测器元件。 在至少一个实施例中，每个检测器元件包括用作检测器材料的半导体，其具有面向辐射的上侧和背离辐射的下侧，至少两个电极，其中一个电极形成在半导体的上侧 通过金属化层，并且所有检测器元件的总和形成基部，其在每个点处具有基准法线。 在至少一个实施例中，本发明的区别在于，半导体的上侧具有在每个点处具有表面法线的表面结构，其中表面法线至少部分地对准与基准法线的角度。 在至少一个实施例中，本发明还涉及一种具有X射线辐射检测器的CT系统，其有利地包括根据本发明的至少一个实施例构造的多个检测器元件。
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4.发明授权X-ray radiation detector for detecting ionizing radiation, in particular for use in a CT system 有权用于检测电离辐射的X射线辐射检测器，特别用于CT系统中公开(公告)号：US08466423B2
公开(公告)日：2013-06-18
申请号：US12731179
申请日：2010-03-25
IPC分类号： G01T1/24
摘要： An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.
摘要翻译： 公开了一种用于检测电离辐射的X射线辐射检测器，特别是用于CT系统中的多个检测器元件。 在至少一个实施例中，每个检测器元件包括用作检测器材料的半导体，其具有面向辐射的上侧和背离辐射的下侧，至少两个电极，其中一个电极形成在半导体的上侧 通过金属化层，并且所有检测器元件的总和形成基部，其在每个点处具有基准法线。 在至少一个实施例中，本发明的区别在于，半导体的上侧具有在每个点处具有表面法线的表面结构，其中表面法线至少部分地对准与基准法线的角度。 在至少一个实施例中，本发明还涉及一种具有X射线辐射检测器的CT系统，其有利地包括根据本发明的至少一个实施例构造的多个检测器元件。
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5.发明申请Detector Material For A Detector For Use In CT Systems, Detector Element And Detector 有权检测器材料用于CT系统，检测器元件和检测器公开(公告)号：US20110200166A1
公开(公告)日：2011-08-18
申请号：US13124216
申请日：2009-04-16
CPC分类号： H01L27/14659 , H01L31/0296 , H01L31/115
摘要： A detector material for a detector is disclosed for use in CT systems, particularly in dual-energy CT systems, including a doped semiconductor. In at least one embodiment, the semiconductor is doped with a donator in a concentration, wherein the concentration of the donator corresponds to at least 50% of the maximum solubility thereof in the semiconductor material, and the donator produces flat imperfections having an excitation energy. The flat imperfections can be ionized and can provide additional freely moveable charge carriers. The freely moveable charge carriers can be captured by the spatially separated deep imperfections and thus reduce the number of the charged deep imperfections. In this way, pure time- and radiation-dependent effects, such as polarization, occur more often. The invention further more relates to the use of the detector material in a CT or dual-energy CT system for generating tomographic images of a test object.
摘要翻译： 公开了一种用于检测器的检测器材料，用于CT系统，特别是在包括掺杂半导体的双能CT系统中。 在至少一个实施方案中，半导体以浓度掺入捐赠者，其中捐赠者的浓度对应于其在半导体材料中的最大溶解度的至少50％，并且捐赠者产生具有激发能的平坦缺陷。 扁平的缺陷可以被电离并且可以提供额外的可自由移动的电荷载体。 可自由移动的电荷载体可以通过空间分离的深度缺陷捕获，从而减少带电深度缺陷的数量。 这样，纯粹的时间和辐射依赖的影响，如极化，更经常地发生。 本发明还涉及在用于产生测试对象的断层图像的CT或双能量CT系统中使用检测器材料。
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公开(公告)号：US20100074397A1
公开(公告)日：2010-03-25
申请号：US12585579
申请日：2009-09-18
摘要： A method is disclosed for detecting X-ray radiation from an X-ray emitter. In at least one embodiment of the method, an electric pulse with a pulse amplitude characteristic of the energy of a quantum is generated when a quantum of the X-ray radiation impinges on a sensor, wherein a number of threshold energies are predetermined. When the pulse amplitude corresponding to the respective energy is exceeded, a signal is emitted each time the pulse amplitude corresponding to a respective threshold energy is exceeded. At least one embodiment of the method permits reliable and high-quality imaging, even in image regions with high X-ray quanta rates. To this end, at least one of the threshold energies is predetermined such that it is higher than the maximum energy of the X-ray spectrum emitted by the X-ray emitter.
摘要翻译： 公开了一种用于检测来自X射线发射器的X射线辐射的方法。 在该方法的至少一个实施例中，当X射线辐射的量子撞击到传感器上时，产生具有量子能量的脉冲幅度特性的电脉冲，其中预定数量的阈值能量。 当超过对应于各自能量的脉冲幅度时，每当超过对应于相应的阈值能量的脉冲幅度时，发出信号。 该方法的至少一个实施例允许可靠和高质量的成像，即使在具有高X射线量子速率的图像区域中。 为此，阈值能量中的至少一个是预定的，使得它高于由X射线发射器发射的X射线光谱的最大能量。
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7.发明授权X-ray detector comprising a directly converting semiconductor layer and calibration method for such an X-ray detector 有权X射线检测器包括直接转换半导体层和用于这种X射线检测器的校准方法公开(公告)号：US08389928B2
公开(公告)日：2013-03-05
申请号：US13088448
申请日：2011-04-18
IPC分类号： G01D18/00
摘要： An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. One embodiment includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking into account of the present polarization state without using X-ray radiation. Another embodiment additionally relates to a calibration method for such an X-ray detector.
摘要翻译： X射线检测器包括用于将入射辐射转换成具有半导体层的带隙能量特性的电信号的直接转换半导体层和用于将光耦合到半导体层中的至少一个光源，其中所产生的光用于 入射X射线量子点的模拟具有高于半导体层带隙能量的能量。 一个实施例包括至少一个评估单元，用于根据当光耦合到半导体层中时产生的电信号计算评估信号;以及至少一个校准单元，用于基于评估信号校准至少一个脉冲鉴别器。 这提供了在不使用X射线辐射的情况下考虑到目前的极化状态来快速重复地校准X射线检测器的先决条件。 另一个实施例另外涉及这种X射线检测器的校准方法。
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8.发明授权Contact structure for an electric II/VI semiconductor component and a method for the production of the same 失效电气II / VI半导体元件的接触结构及其制造方法公开(公告)号：US06673641B1
公开(公告)日：2004-01-06
申请号：US10111661
申请日：2002-04-24
IPC分类号： H01L2100
CPC分类号： H01L33/40 , H01L21/443 , H01L33/28 , H01S5/0425 , H01S5/327
摘要： A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distinguished by a relatively great, not purely ohmic specific contact resistance in relation to the II/VI cover layer. The consequentially necessary higher operating voltages result in the unnecessary generation of heat and thus substantially accelerate degradation of the entire laser structure. That effect causes a limitation in terms of the service life of II/VI semiconductor laser diodes. The invention permits the operation of semiconductor laser diodes with lower operating voltages. The II/VI semiconductor laser diodes produced with our invention are distinguished by a longer service life. That permits inter alia commercial use of semiconductor laser diodes in the blue-green spectral range.
摘要翻译： 用于生产用于电操作的II / VI半导体结构（例如激光二极管）的触点的方法。 迄今用于电操作的II / VI半导体激光器的接触材料钯和金的特征在于相对于II / VI覆盖层相对较大而非纯欧姆的比接触电阻。 因此必要的较高工作电压导致不必要的热量产生，从而基本上加速整个激光器结构的劣化。 这种影响导致了II / VI半导体激光二极管的使用寿命方面的限制。 本发明允许具有较低工作电压的半导体激光二极管的操作。 本发明生产的II / VI半导体激光二极管具有较长的使用寿命。 这允许在蓝 - 绿光谱范围内商业使用半导体激光二极管。
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9.发明授权Radiation converter material, radiation converter, radiation detector, use of a radiation converter material and method for producing a radiation converter material 有权辐射转换器材料，辐射转换器，辐射探测器，辐射转换器材料的使用以及用于产生辐射转换器材料的方法公开(公告)号：US08920686B2
公开(公告)日：2014-12-30
申请号：US13016016
申请日：2011-01-28
IPC分类号： H01B1/06 , H01L31/0296 , H01L31/0272 , H01L31/0264 , H01L31/115 , G01T1/24
CPC分类号： G01T1/24 , H01L31/115
摘要： A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 Ω·cm and 2·109 Ω·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.
摘要翻译： 辐射转换器材料包括用于将辐射量子直接转换成电荷载流子的半导体材料。 在至少一个实施例中，半导体材料包括掺杂剂浓度的掺杂剂和以工艺规定的方式产生的缺陷位置，使得半导体材料包括在介于5×10 7Ω·cm之间的欧姆电阻率 和2·109＆OHgr··cm。 关于高通量率和辐射量子谱的光谱分布，这种辐射转换器材料特别好地符合人类医疗应用中的要求。 在至少一个实施例中，本发明还涉及辐射转换器和辐射探测器，以及用于生产这种辐射转换器材料的用途和方法。
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公开(公告)号：US08422627B2
公开(公告)日：2013-04-16
申请号：US12585579
申请日：2009-09-18
IPC分类号： A61B6/03
摘要： A method is disclosed for detecting X-ray radiation from an X-ray emitter. In at least one embodiment of the method, an electric pulse with a pulse amplitude characteristic of the energy of a quantum is generated when a quantum of the X-ray radiation impinges on a sensor, wherein a number of threshold energies are predetermined. When the pulse amplitude corresponding to the respective energy is exceeded, a signal is emitted each time the pulse amplitude corresponding to a respective threshold energy is exceeded. At least one embodiment of the method permits reliable and high-quality imaging, even in image regions with high X-ray quanta rates. To this end, at least one of the threshold energies is predetermined such that it is higher than the maximum energy of the X-ray spectrum emitted by the X-ray emitter.
摘要翻译： 公开了一种用于检测来自X射线发射器的X射线辐射的方法。 在该方法的至少一个实施例中，当X射线辐射的量子撞击到传感器上时，产生具有量子能量的脉冲振幅特性的电脉冲，其中预定了许多阈值能量。 当超过对应于各自能量的脉冲幅度时，每当超过对应于相应的阈值能量的脉冲幅度时，发出信号。 该方法的至少一个实施例允许可靠和高质量的成像，即使在具有高X射线量子速率的图像区域中。 为此，阈值能量中的至少一个是预定的，使得它高于由X射线发射器发射的X射线光谱的最大能量。
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