公开(公告)号：US20190189420A1

公开(公告)日：2019-06-20

申请号：US16282909

申请日：2019-02-22

Applicant: Mattson Technology, Inc.

Inventor： Tongchuan Gao ,  Grigoriy Kishko ,  Vijay M. Vaniapura ,  Michael X. Yang

IPC: H01L21/02 ,  B08B5/00 ,  G03F7/42 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L21/0206 ,  B08B5/00 ,  G03F7/427 ,  H01L21/56 ,  H01L23/3171 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/7851

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.

公开(公告)号：US11094528B2

公开(公告)日：2021-08-17

申请号：US16282909

申请日：2019-02-22

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Tongchuan Gao ,  Grigoriy Kishko ,  Vijay M. Vaniapura ,  Michael X. Yang

IPC: H01L21/02 ,  H01L21/56 ,  H01L23/31 ,  G03F7/42 ,  B08B5/00 ,  H01L29/10 ,  H01L29/165 ,  H01L29/78

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.

公开(公告)号：US10217626B1

公开(公告)日：2019-02-26

申请号：US15843043

申请日：2017-12-15

Applicant: Mattson Technology, Inc.

Inventor： Tongchuan Gao ,  Grigoriy Kishko ,  Vijay M. Vaniapura ,  Michael X. Yang

IPC: H01L21/02 ,  H01L21/56 ,  H01L23/31 ,  G03F7/42 ,  B08B5/00 ,  H01L29/10 ,  H01L29/165 ,  H01L29/78

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.