公开(公告)号：US12073903B1

公开(公告)日：2024-08-27

申请号：US18172983

申请日：2023-02-22

Applicant: Meta Platforms Technologies, LLC

Inventor： Umanath Ramachandra Kamath ,  Ali Mesgarani ,  Robert Wiser

IPC: G11C29/00 ,  G11C29/50

CPC classification number: G11C29/50004 ,  G11C29/50016

Abstract: A method may be performed by a leakage monitoring and compensation system configured to estimate and compensate for leakage current in memory unit cells. The method may include identifying a leakage monitoring component associated with a memory unit cell. Further, the method may include sampling multiple leak events during a first exposure window. The method may include storing a first count representing the plurality of leak events sampled during the first exposure window. Each leak event may correspond to a unit of memory leakage. The method may include sampling multiple sensing events during a second exposure window. The method may include detecting a second count representing the sensing events sampled during the second exposure window. The method may include determining a compensation value representing a difference between the first count and the second count.

公开(公告)号：US20240329213A1

公开(公告)日：2024-10-03

申请号：US18190853

申请日：2023-03-27

Applicant: Meta Platforms Technologies, LLC

Inventor： Ali Mesgarani ,  Augusto Ronchini Ximenes ,  Nishit Sumanbhai Patel

IPC: G01S7/4865 ,  G01S7/4863

CPC classification number: G01S7/4865 ,  G01S7/4863 ,  G11C11/419 ,  H01L25/167

Abstract: In one embodiment, a system may comprise a plurality of photon sensors for detecting photons, a plurality of event registers for storing photon-detection events detected by the plurality of photon sensors during an exposure window after a laser event, and an SRAM disposed under the plurality of photon sensors. The SRAM may comprise a plurality of memory cells associated with each photon sensor of the plurality of photon sensors to store a histogram of photon-detection events. Each memory cell may store photon-detection events detected during a predetermined time period after the laser event. The SRAM may comprise an in-memory incrementor to update the plurality of memory cells based on the photon-detection events. The in-memory incrementor may read an event count stored in a selected one of the plurality of memory cells, increment the event count, and write the incremented event count back to the selected memory cell.

公开(公告)号：US20240283444A1

公开(公告)日：2024-08-22

申请号：US18170795

申请日：2023-02-17

Applicant: Meta Platforms Technologies, LLC

Inventor： Umanath Ramachandra Kamath ,  Ali Mesgarani ,  Jason Silver ,  Robert Wiser ,  Augusto Ronchini Ximenes

IPC: H03K17/16

CPC classification number: H03K17/162 ,  H01L27/088

Abstract: A circuit may be configured to reduce current leakage. The circuit may include a bias generator, a charge interface, and a charge controller. The bias generator may be coupled to a first voltage source and configured to generate a first current and provide a first voltage. The charge interface may be communicatively coupled to the bias generator and configured to mirror the first current into a second current. The charge controller may be communicatively coupled to the charge interface and configured to receive the second current from the charge interface and provide a second voltage. The bias generator may be further configured to perform an ultra-low leakage switching operation in which the first voltage is switched to a third voltage while reducing a first possibility of band-band tunneling leakage at the charge interface.

公开(公告)号：US20240282398A1

公开(公告)日：2024-08-22

申请号：US18172983

申请日：2023-02-22

Applicant: Meta Platforms Technologies, LLC

Inventor： Umanath Ramachandra Kamath ,  Ali Mesgarani ,  Robert Wiser

IPC: G11C29/50

CPC classification number: G11C29/50004 ,  G11C29/50016

Abstract: A method may be performed by a leakage monitoring and compensation system configured to estimate and compensate for leakage current in memory unit cells. The method may include identifying a leakage monitoring component associated with a memory unit cell. Further, the method may include sampling multiple leak events during a first exposure window. The method may include storing a first count representing the plurality of leak events sampled during the first exposure window. Each leak event may correspond to a unit of memory leakage. The method may include sampling multiple sensing events during a second exposure window. The method may include detecting a second count representing the sensing events sampled during the second exposure window. The method may include determining a compensation value representing a difference between the first count and the second count.

公开(公告)号：US20240276111A1

公开(公告)日：2024-08-15

申请号：US18168360

申请日：2023-02-13

Applicant: Meta Platforms Technologies, LLC

Inventor： Ali Mesgarani ,  Umanath Ramachandra Kamath ,  Augusto Ronchini Ximenes

IPC: H04N25/50 ,  G02B27/01 ,  H02J7/00 ,  H02J7/34 ,  H04N25/771 ,  H04N25/78

CPC classification number: H04N25/50 ,  G02B27/0172 ,  H02J7/0063 ,  H02J7/345 ,  H04N25/771 ,  H04N25/78 ,  G01S17/08 ,  G02B2027/014 ,  G02B2027/0178

Abstract: This disclosure describes a method of operating an image sensor and a plurality of memory cells associated with the image sensor, each memory cell comprising: one or more input lines, a stop exposure output line; a storage capacitor; and a stop exposure circuit. The method may comprise, by each of the memory cells, sensing a voltage representing an exposure event in response to the input lines being enabled, and by a first one of the memory cells, enabling the stop exposure output line in response to a charge on the storage capacitor satisfying a charge threshold; and stopping further exposure of the image sensor in response to the stop exposure output line being enabled for the first one of the memory cells.