Method and system for estimating and compensating for leakage current in memory unit cells

    公开(公告)号:US12073903B1

    公开(公告)日:2024-08-27

    申请号:US18172983

    申请日:2023-02-22

    IPC分类号: G11C29/00 G11C29/50

    CPC分类号: G11C29/50004 G11C29/50016

    摘要: A method may be performed by a leakage monitoring and compensation system configured to estimate and compensate for leakage current in memory unit cells. The method may include identifying a leakage monitoring component associated with a memory unit cell. Further, the method may include sampling multiple leak events during a first exposure window. The method may include storing a first count representing the plurality of leak events sampled during the first exposure window. Each leak event may correspond to a unit of memory leakage. The method may include sampling multiple sensing events during a second exposure window. The method may include detecting a second count representing the sensing events sampled during the second exposure window. The method may include determining a compensation value representing a difference between the first count and the second count.

    TIME MULTIPLEXING OF BOOTSTRAP SAMPLE NETWORK

    公开(公告)号:US20240313771A1

    公开(公告)日:2024-09-19

    申请号:US18184936

    申请日:2023-03-16

    IPC分类号: H03K17/687

    CPC分类号: H03K17/6872

    摘要: In one embodiment, an electrical circuit module may include a bootstrap capacitor connected to a bootstrap-capacitor charging switch. A first signal channel may include a first sampling switch and a first control switch that controls a first connection between the bootstrap capacitor and a first control input of the first sampling switch. A second signal channel may include a second sampling switch and a second control switch that controls a second connection between the bootstrap capacitor and a second control input of the second sampling switch. The bootstrap capacitor may be charged during a first operation phase during which the bootstrap-capacitor charging switch is turned on. The first control switch of the first signal channel may be turned on during a first sub-phase of a second operation phase, and the second control switch of the second signal channel is turned on during a second sub-phase of the second operation phase.

    Circuit And System For Reducing Current Leakage

    公开(公告)号:US20240283444A1

    公开(公告)日:2024-08-22

    申请号:US18170795

    申请日:2023-02-17

    IPC分类号: H03K17/16

    CPC分类号: H03K17/162 H01L27/088

    摘要: A circuit may be configured to reduce current leakage. The circuit may include a bias generator, a charge interface, and a charge controller. The bias generator may be coupled to a first voltage source and configured to generate a first current and provide a first voltage. The charge interface may be communicatively coupled to the bias generator and configured to mirror the first current into a second current. The charge controller may be communicatively coupled to the charge interface and configured to receive the second current from the charge interface and provide a second voltage. The bias generator may be further configured to perform an ultra-low leakage switching operation in which the first voltage is switched to a third voltage while reducing a first possibility of band-band tunneling leakage at the charge interface.

    Method And System For Estimating And Compensating For Leakage Current In Memory Unit Cells

    公开(公告)号:US20240282398A1

    公开(公告)日:2024-08-22

    申请号:US18172983

    申请日:2023-02-22

    IPC分类号: G11C29/50

    CPC分类号: G11C29/50004 G11C29/50016

    摘要: A method may be performed by a leakage monitoring and compensation system configured to estimate and compensate for leakage current in memory unit cells. The method may include identifying a leakage monitoring component associated with a memory unit cell. Further, the method may include sampling multiple leak events during a first exposure window. The method may include storing a first count representing the plurality of leak events sampled during the first exposure window. Each leak event may correspond to a unit of memory leakage. The method may include sampling multiple sensing events during a second exposure window. The method may include detecting a second count representing the sensing events sampled during the second exposure window. The method may include determining a compensation value representing a difference between the first count and the second count.