公开(公告)号：US06207358B1

公开(公告)日：2001-03-27

申请号：US09154781

申请日：1998-09-17

申请人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

发明人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

IPC分类号： G03F742

CPC分类号： G03F7/422 ,  G03F7/425

摘要： In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

摘要翻译： 在半导体器件的制造中，在半导体衬底上形成精细图案的方法包括以下步骤：将沉积在半导体衬底的膜上的光致抗蚀剂曝光和显影，以除去光致抗蚀剂的选定部分，蚀刻膜的部分 当去除光致抗蚀剂的选定部分时，暴露于左侧，随后用二甲基乙酰胺或单乙醇胺和二甲基亚砜的组合除去保留在半导体衬底上的任何光致抗蚀剂。 这种剥离溶液能够除去深UV组中的光致抗蚀剂以及I线组中常规使用的光致抗蚀剂。

公开(公告)号：US06337174B1

公开(公告)日：2002-01-08

申请号：US09428917

申请日：1999-10-28

申请人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

发明人： Mi-sook Jeon ,  Chun-deuk Lee ,  June-ing Gil ,  Pil-kwon Jun

IPC分类号： G03C500

CPC分类号： G03F7/426 ,  G03F7/425

摘要： In the fabrication of semiconductor devices, a method of forming a fine pattern on a semiconductor substrate includes the steps of exposing and developing a photoresist deposited on a film of a semiconductor substrate in order to remove selected portions of the photoresist, etching portions of the film left exposed when the selected portions of the photoresist are removed, and subsequently removing any of the photoresist remaining on the semiconductor substrate with dimethylacetamide, or a combination of monoethanolamine and dimethylsulfoxide. Such stripping solutions are capable of removing photoresists in the Deep-UV group as well as the conventionally used photoresists in the I-line group.

摘要翻译： 在半导体器件的制造中，在半导体衬底上形成精细图案的方法包括以下步骤：将沉积在半导体衬底的膜上的光致抗蚀剂曝光和显影，以除去光致抗蚀剂的选定部分，蚀刻膜的部分 当去除光致抗蚀剂的选定部分时，暴露于左侧，随后用二甲基乙酰胺或单乙醇胺和二甲基亚砜的组合除去保留在半导体衬底上的任何光致抗蚀剂。 这种剥离溶液能够除去深UV组中的光致抗蚀剂以及I线组中常规使用的光致抗蚀剂。

公开(公告)号：US6159646A

公开(公告)日：2000-12-12

申请号：US148160

申请日：1998-09-04

申请人： Mi-sook Jeon ,  Chun-deuk Lee ,  Bo-yong Lee

发明人： Mi-sook Jeon ,  Chun-deuk Lee ,  Bo-yong Lee

IPC分类号： C11D7/26 ,  C11D7/50 ,  G03F7/16 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/168 ,  G03F7/3021 ,  G03F7/422

摘要： A thinner composition for removing photoresist, a rework method for wafers, and a method of manufacturing semiconductor devices are provided. The thinner composition is applied for removing excess photoresist coated on the edge side or back side of wafer. The thinner may be a mixture of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP), and .tau.-butyro lactone (GBL), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP). The rework process is carried out, using the above thinner compositions, on the wafers having excess coated photoresist due to an etching failure. The method of manufacturing semiconductor devices includes a rinsing step for removing the excess coated photoresist on the edge side or back side of wafer by using the above thinner compositions.

摘要翻译： 提供了用于去除光致抗蚀剂的较薄组合物，晶片的返工方法以及半导体器件的制造方法。 施加较薄的组合物以除去涂覆在晶片的边缘侧或背面的多余的光刻胶。 稀释剂可以是乳酸乙酯（EL），乙基-3-乙氧基丙酸酯（EEP）和叔丁内酯（GBL）的混合物，或乳酸乙酯（EL）和乙酸3-乙氧基丙酸酯 EEP）或乳酸乙酯（EL）和乙基-3-乙氧基丙酸酯（EEP）的混合物。 使用上述更薄的组合物，由于蚀刻失败，在具有过量涂覆的光致抗蚀剂的晶片上进行返工过程。 制造半导体器件的方法包括通过使用上述更薄组合物去除晶片的边缘侧或背面上的多余的涂覆光致抗蚀剂的漂洗步骤。

公开(公告)号：US6010637A

公开(公告)日：2000-01-04

申请号：US34329

申请日：1998-03-04

申请人： Chun-deuk Lee ,  Kyoung-seop Lee ,  Hyun-woon Lee ,  Jung-keun Lee

发明人： Chun-deuk Lee ,  Kyoung-seop Lee ,  Hyun-woon Lee ,  Jung-keun Lee

IPC分类号： G01N1/28 ,  G01N33/00 ,  H01L21/66 ,  C03C25/06

CPC分类号： H01L22/12

摘要： A method for preparing a sample for its optical analysis in the manufacture of a semiconductor device includes the step of drying a liquid formed on the semiconductor wafer until the concentration of contaminants contained in the liquid is of a sufficiently high level for the optical analyzer to adequately detect the contaminants. The liquid may be of a film formed on the wafer and dissolved into liquid drops, or deionized water or various chemicals to which the wafer is exposed during a manufacturing process. The apparatus includes a chuck for bringing the wafer into and out of a processing chamber, a guide for guiding the chuck, a piston cylinder for driving the chuck along the guide to a processing position, and a gas supplying system which directs nitrogen gas onto the wafer for drying the liquid. Appropriate controls are provided so that the apparatus can be operated automatically or manually.

摘要翻译： 在制造半导体器件中制备用于其光学分析的样品的方法包括干燥形成在半导体晶片上的液体的步骤，直到包含在液体中的污染物的浓度足够高以使光学分析仪足够高 检测污染物。 液体可以是在晶片上形成的膜，并且在制造过程中溶解成液滴或去离子水或晶片暴露于其中的各种化学品。 该装置包括用于使晶片进入和离开处理室的卡盘，用于引导卡盘的引导件，用于将卡盘沿引导件驱动到加工位置的活塞缸，以及将氮气引导到加工位置的气体供给系统 用于干燥液体的晶片。 提供适当的控制，使得装置可以自动或手动操作。