公开(公告)号：US5762755A

公开(公告)日：1998-06-09

申请号：US994604

申请日：1992-12-21

申请人： Michael A. McNeilly ,  John M. deLarios ,  Glenn L. Nobinger ,  Wilbur C. Krusell ,  Dah-Bin Kao ,  Ralph K. Manriquez ,  Chiko Fan

发明人： Michael A. McNeilly ,  John M. deLarios ,  Glenn L. Nobinger ,  Wilbur C. Krusell ,  Dah-Bin Kao ,  Ralph K. Manriquez ,  Chiko Fan

IPC分类号： H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/02019 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/67069 ,  Y10S438/906

摘要： A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer surface to remove organics, followed by vapor phase etching. An integrated apparatus for cleaning organic and, subsequently, vapor phase etching, is also described. In embodiments of the invention cooling steps are incorporated to increase throughput, an on-demand vaporizer is provided to repeatably supply vapor at other than azeotropic concentration, and a residue-free etch process is provided.

摘要翻译： 用于实现与用于半导体器件的晶片相关联的硅，氧化硅层和相关材料的气相蚀刻中更大的均匀性和控制的方法包括以下步骤：首先清洁晶片表面以去除有机物，随后进行气相蚀刻。 还描述了一种用于清洁有机物并随后进行气相蚀刻的集成设备。 在本发明的实施例中，结合冷却步骤以增加生产量，提供按需蒸发器以在不同于共沸浓度的情况下重复地供应蒸气，并且提供无残留的蚀刻工艺。