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1.发明授权公开(公告)号：US07459319B2
公开(公告)日：2008-12-02
申请号：US11681843
申请日：2007-03-05
CPC分类号： H01L21/67253 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for testing and characterizing features formed on a substrate. In one embodiment, a test structure is provided that includes a test element having a first side and an opposing second side. A first set of one or more structures defining a first region having a first local density are disposed adjacent the first side of the test element. A second set of one or more structures defining a second region having a second local density are disposed adjacent the second side of the test element. A third set of one or more structures defining a third region having a first global density are disposed adjacent the first region. A fourth set of one or more structures defining a fourth region having a second global density are disposed adjacent the second region.
摘要翻译： 一种用于测试和表征在基板上形成的特征的方法和装置。 在一个实施例中，提供了包括具有第一侧和相对的第二侧的测试元件的测试结构。 限定具有第一局部密度的第一区域的一个或多个结构的第一组结构设置在测试元件的第一侧附近。 限定具有第二局部密度的第二区域的一个或多个结构的第二组结构设置在测试元件的第二侧附近。 限定具有第一全局密度的第三区域的一个或多个结构的第三组结构设置在第一区域附近。 限定具有第二全局密度的第四区域的第四组一个或多个结构设置在第二区域附近。
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2.发明授权公开(公告)号：US07196350B2
公开(公告)日：2007-03-27
申请号：US11128133
申请日：2005-05-12
IPC分类号： H01L23/58
CPC分类号： H01L21/67253 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for testing and characterizing features formed on a substrate. In one embodiment, a test structure is provided that includes a test element having a first side and an opposing second side. A first set of one or more structures defining a first region having a first local density are disposed adjacent the first side of the test element. A second set of one or more structures defining a second region having a second local density are disposed adjacent the second side of the test element. A third set of one or more structures defining a third region having a first global density are disposed adjacent the first region. A fourth set of one or more structures defining a fourth region having a second global density are disposed adjacent the second region.
摘要翻译： 一种用于测试和表征在基板上形成的特征的方法和装置。 在一个实施例中，提供了包括具有第一侧和相对的第二侧的测试元件的测试结构。 限定具有第一局部密度的第一区域的一个或多个结构的第一组结构设置在测试元件的第一侧附近。 限定具有第二局部密度的第二区域的一个或多个结构的第二组结构设置在测试元件的第二侧附近。 限定具有第一全局密度的第三区域的一个或多个结构的第三组结构设置在第一区域附近。 限定具有第二全局密度的第四区域的第四组一个或多个结构设置在第二区域附近。
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3.发明申请METHOD AND TEST-STRUCTURE FOR DETERMINING AN OFFSET BETWEEN LITHOGRAPHIC MASKS 审中-公开用于确定LITHOGRAPHIC MASKS之间偏移的方法和测试结构公开(公告)号：US20080192253A1
公开(公告)日：2008-08-14
申请号：US11672781
申请日：2007-02-08
CPC分类号： G03F7/203 , G03F1/00 , G03F1/42 , G03F7/70466 , G03F7/70616 , G03F9/7049
摘要： A method and a test-structure for determining an offset between lithographic masks are described. In one embodiment, an image of a first mask is provided in a patterning layer on a substrate. The image of the first mask comprises a first set of lines, each line separated by a distance D. An image of a second mask is then provided in the patterning layer. The image of the second mask comprises a second set of lines, each line also separated by the distance D. The second set of lines interlays the first set of lines to form a grating with a distance L between each of the lines of the first set of lines and the respective corresponding lines of the second set of lines. The offset between the first and second masks is determined by calculating the difference between the distance L and a predetermined value K, where 0
摘要翻译： 描述了用于确定光刻掩模之间的偏移的方法和测试结构。 在一个实施例中，在基板上的图形层中提供第一掩模的图像。 第一掩模的图像包括第一组线，每条线分开距离D.然后在图案化层中提供第二掩模的图像。 第二掩模的图像包括第二组线，每条线也被距离D分隔。第二组线相互间隔第一组线以形成在第一组的每条线之间具有距离L的光栅 的线和第二组线的各自对应的线。 通过计算距离L和预定值K之间的差来确定第一和第二掩模之间的偏移，其中0
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4.发明授权Methods and apparatus for measuring thickness of etching residues on a substrate 有权用于测量衬底上蚀刻残留物的厚度的方法和装置公开(公告)号：US07817289B2
公开(公告)日：2010-10-19
申请号：US12178567
申请日：2008-07-23
申请人： Susie Xiuru Yang
发明人： Susie Xiuru Yang
IPC分类号： G01B11/28
CPC分类号： G01B11/0625 , H01J37/32935 , H01L22/12
摘要： A method of determining a thickness of a residue layer on a substrate includes: (1) taking a first set of optical scatterometry measurements on the substrate after an etching procedure; (2) taking a second set of optical scatterometry measurements on the substrate after a post-etch cleaning procedure; (3) calculating a difference measurement between the first set and second set of optical scatterometry measurements; (4) determining an initial thickness measurement of the residue layer based on the difference measurement by applying a first dispersion model; and (5) adjusting the initial thickness measurement by applying a second dispersion model based on a material composition of the residue layer. Numerous other aspects are provided.
摘要翻译： 确定衬底上的残留层的厚度的方法包括：（1）在蚀刻过程之后在衬底上进行第一组光学散射测量测量; （2）在蚀刻后的清洗程序之后在衬底上进行第二组光散射测量; （3）计算第一组和第二组光学散射测量之间的差值测量; （4）通过应用第一色散模型，基于差异测量来确定残余层的初始厚度测量; 和（5）通过应用基于残余层的材料组成的第二分散模型来调整初始厚度测量。 提供了许多其他方面。
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5.发明申请METHODS AND APPARATUS FOR MEASURING THICKNESS OF ETCHING RESIDUES ON A SUBSTRATE 有权用于测量衬底上蚀刻残留厚度的方法和装置公开(公告)号：US20090027695A1
公开(公告)日：2009-01-29
申请号：US12178567
申请日：2008-07-23
申请人： Susie Xiuru Yang
发明人： Susie Xiuru Yang
IPC分类号： G01B11/06
CPC分类号： G01B11/0625 , H01J37/32935 , H01L22/12
摘要： A method of determining a thickness of a residue layer on a substrate includes: (1) taking a first set of optical scatterometry measurements on the substrate after an etching procedure; (2) taking a second set of optical scatterometry measurements on the substrate after a post-etch cleaning procedure; (3) calculating a difference measurement between the first set and second set of optical scatterometry measurements; (4) determining an initial thickness measurement of the residue layer based on the difference measurement by applying a first dispersion model; and (5) adjusting the initial thickness measurement by applying a second dispersion model based on a material composition of the residue layer. Numerous other aspects are provided.
摘要翻译： 确定衬底上的残留层的厚度的方法包括：（1）在蚀刻过程之后在衬底上进行第一组光学散射测量测量; （2）在蚀刻后的清洗程序之后在衬底上进行第二组光散射测量; （3）计算第一组和第二组光学散射测量之间的差值测量; （4）通过应用第一色散模型，基于差异测量来确定残余层的初始厚度测量; 和（5）通过应用基于残余层的材料组成的第二分散模型来调整初始厚度测量。 提供了许多其他方面。
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