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4 条记录 (耗时 0.017 秒)

    Domed extension for process chamber electrode
    1.
    发明授权
    Domed extension for process chamber electrode 失效
    处理室电极的圆顶延伸

    公开(公告)号：US5480052A

    公开(公告)日：1996-01-02

    申请号：US141456

    申请日：1993-10-22

    申请人： Michael G. Furr ,  Joseph Kava ,  Greg Blackburn ,  Richard McGovern

    发明人： Michael G. Furr ,  Joseph Kava ,  Greg Blackburn ,  Richard McGovern

    IPC分类号： C23F4/00 ,  H01J37/16 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

    CPC分类号： H01J37/32458 ,  H01J37/16 ,  Y10S156/916 ,  Y10S156/917

    摘要： A domed dielectric extension is set atop a standard electrode in a bell jar shaped process chamber to decrease electrical interaction between the electrode and the process chamber and thereby decrease the stagnant plasma in the region between the electrode and the process chamber lid that promotes polymer deposition upon the inner surface of a process chamber lid. The extension, made of a process inert dielectric material such as polycarbonate, has an upper surface that is curved to conform to the shape of the inner surface of the process chamber lid and that is precisely spaced from the upper portion of the process chamber lid inner surface.

    摘要翻译： 圆顶形电介质延伸器设置在钟罩形状处理室中的标准电极顶部，以减小电极和处理室之间的电相互作用，从而减少电极和处理室盖之间的区域中滞留的等离子体，从而促进聚合物沉积 处理室盖的内表面。 由诸如聚碳酸酯的工艺惰性介电材料制成的延伸部具有弯曲的上表面，以适应处理室盖的内表面的形状并且与处理室盖内部的上部精确地间隔开 表面。

    Contaminant reduction improvements for plasma etch chambers
    2.
    发明授权
    Contaminant reduction improvements for plasma etch chambers 失效
    等离子体蚀刻室的污染物减少改进

    公开(公告)号：US5693179A

    公开(公告)日：1997-12-02

    申请号：US459172

    申请日：1995-06-02

    申请人： Greg Blackburn ,  Joseph Kava ,  Richard McGovern ,  Yan Rozenzon

    发明人： Greg Blackburn ,  Joseph Kava ,  Richard McGovern ,  Yan Rozenzon

    IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  C23C14/34 ,  H05H1/24

    CPC分类号： H01J37/32871 ,  H01J37/32449 ,  H01J37/32642 ,  H01J2237/022 ,  Y10S156/916 ,  Y10S156/917

    摘要： A plasma etch chamber includes a modified focus ring which is used in conjunction with chamber pressure throttling to eject contaminants in the focus ring away from the substrate just before the etching cycle is completed. Additionally, process gas is directed against the inner wall of the chamber to create a swirling flow of plasma within the chamber and thus disturb any contaminant-generating field adjacent the chamber wall. A process gas, or a non-reactive purge gas, may also be supplied from a diffuser atop the cathode, to direct a gas layer along the top and sides of the chamber to reduce contaminant build-up on the chamber surfaces.

    摘要翻译： 等离子体蚀刻室包括改进的聚焦环，其与室压力节流结合使用，以在蚀刻周期完成之前将聚焦环中的污染物远离基板排出。 此外，处理气体被引导到室的内壁，以在腔室内产生等离子体的旋转流，并且因此干扰邻近室壁的任何污染物产生场。 处理气体或非反应性净化气体也可以从阴极顶部的扩散器提供，以沿室的顶部和侧面引导气体层，以减少室表面上的污染物积聚。

    Contaminant reduction improvements for plasma etch chambers
    3.
    发明授权
    Contaminant reduction improvements for plasma etch chambers 失效
    等离子体蚀刻室的污染物减少改进

    公开(公告)号：US5716484A

    公开(公告)日：1998-02-10

    申请号：US439144

    申请日：1995-05-11

    申请人： Greg Blackburn ,  Joseph Kava ,  Richard McGovern ,  Yan Rozenzon

    发明人： Greg Blackburn ,  Joseph Kava ,  Richard McGovern ,  Yan Rozenzon

    IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02 ,  C23C14/34 ,  C23C16/00

    CPC分类号： H01J37/32871 ,  H01J37/32449 ,  H01J37/32642 ,  H01J2237/022 ,  Y10S156/916 ,  Y10S156/917

    摘要： A plasma etch chamber includes a modified focus ring which is used in conjunction with chamber pressure throttling to eject contaminants in the focus ring away from the substrate just before the etching cycle is completed. Additionally, process gas is directed against the inner wall of the chamber to create a swirling flow of plasma within the chamber and thus disturb any contaminant-generating field adjacent the chamber wall. A process gas, or a non-reactive purge gas, may also be supplied from a diffuser atop the cathode, to direct a gas layer along the top and sides of the chamber to reduce contaminant build-up on the chamber surfaces.

    摘要翻译： 等离子体蚀刻室包括改进的聚焦环，其与室压力节流结合使用，以在蚀刻周期完成之前将聚焦环中的污染物远离基板排出。 此外，处理气体被引导到室的内壁，以在腔室内产生等离子体的旋转流，并且因此干扰邻近室壁的任何污染物产生场。 处理气体或非反应性净化气体也可以从阴极顶部的扩散器提供，以沿室的顶部和侧面引导气体层，以减少室表面上的污染物积聚。