METHOD AND DEVICE FOR PRODUCING AND PROCESSING LAYERS OF SUBSTRATES UNDER A DEFINED PROCESSING ATMOSPHERE
    3.
    发明申请
    METHOD AND DEVICE FOR PRODUCING AND PROCESSING LAYERS OF SUBSTRATES UNDER A DEFINED PROCESSING ATMOSPHERE 审中-公开
    用于生产和加工定义加工大气层底物层的方法和装置

    公开(公告)号:US20090061088A1

    公开(公告)日:2009-03-05

    申请号:US12176454

    申请日:2008-07-21

    IPC分类号: C23C16/00 C23C16/458 H05B6/00

    摘要: A method is provided for producing a processing atmosphere for coating substrates, with this method primarily being used in CVD-processes for precipitating an individual layer or a system of individual layers under defined processing atmospheres, in which processing gas is supplied to a coating chamber in a defined manner and exhausted. Via the method and related devices, a variable processing atmosphere is adjustable inside the coating chamber in a flexible, reliable and homogenous manner, and requiring a reduced maintenance and energy expense, even when the substrate is heated. The processing gas is created by at least one gas channel extending perpendicular in reference to the substrate by way of supplying gas flow or exhausting, with a lateral extension being equivalent to the width of the substrate.

    摘要翻译: 提供了一种用于生产用于涂覆基材的处理气氛的方法,该方法主要用于在规定的加工环境下沉淀单个层或各层的体系的CVD工艺,其中将处理气体供应到涂覆室 一个定义的方式和用尽。 通过该方法和相关设备,可以以柔性,可靠和均匀的方式在涂层室内调节可变处理气氛,并且即使在加热基板时也需要减少维护和能量消耗。 处理气体由至少一个气体通道产生,所述至少一个气体通道通过提供气流或排气而相对于基板垂直延伸,横向延伸部等于基板的宽度。