公开(公告)号：US08288828B2

公开(公告)日：2012-10-16

申请号：US10711298

申请日：2004-09-09

申请人： Michael M. Iwatake ,  Kevin E. Mello ,  Matthew W. Oonk ,  Amanda L. Piper ,  Yun Y. Wang ,  Keith K. Wong

发明人： Michael M. Iwatake ,  Kevin E. Mello ,  Matthew W. Oonk ,  Amanda L. Piper ,  Yun Y. Wang ,  Keith K. Wong

IPC分类号： H01L23/52

CPC分类号： H01L21/28518 ,  H01L21/76877

摘要： A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.

摘要翻译： 通孔接触被提供到包括单晶半导体区域的衬底的顶表面处的扩散区域。 通孔接触包括第一层，其基本上由与顶表面上的扩散区接触的第一金属的硅化物组成。 电介质区域覆盖在第一层上，电介质区域具有外表面和从衬底的外表面延伸到顶表面的开口。 第二层将开口划线并与开口中的基板的顶表面接触，第二层包括将开口的侧壁排列的第二金属和与第二金属的顶表面自对准的第二金属的硅化物 基材在开口处。 扩散阻挡层覆盖开口内的第二层。 包括第三金属的第三层覆盖扩散阻挡层并填充开口。

公开(公告)号：US07750418B2

公开(公告)日：2010-07-06

申请号：US12125508

申请日：2008-05-22

申请人： Michael P. Chudzik ,  Bruce B. Doris ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Yun Y. Wang ,  Keith Kwong Hon Wong

发明人： Michael P. Chudzik ,  Bruce B. Doris ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Yun Y. Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L29/76 ,  H01L21/8238

CPC分类号： H01L29/517 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal-oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.

摘要翻译： 提供半导体结构，例如场效应晶体管（FET）和/或金属氧化物半导体电容器（MOSCAP），其中通过将金属杂质引入到含金属的物质中来改变导电电极堆叠的功函数 材料层与导电电极一起存在于电极堆叠中。 金属杂质的选择取决于电极是否具有n型功函数或p型功函数。 本发明还提供一种制造这种半导体结构的方法。 金属杂质的引入可以通过共沉积含有金属的材料和改变金属杂质的功函数的层来形成，形成其中金属杂质层存在于含金属材料的层之间的叠层，或通过形成 包括在含金属材料上方和/或下面的金属杂质的材料层，然后加热该结构，使得金属杂质被引入到含金属的材料中。

公开(公告)号：US07425497B2

公开(公告)日：2008-09-16

申请号：US11336727

申请日：2006-01-20

申请人： Michael P. Chudzik ,  Bruce B. Doris ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Yun Y. Wang ,  Keith Kwong Hon Wong

发明人： Michael P. Chudzik ,  Bruce B. Doris ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Yun Y. Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L21/283

CPC分类号： H01L29/517 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal-oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.

摘要翻译： 提供半导体结构，例如场效应晶体管（FET）和/或金属氧化物半导体电容器（MOSCAP），其中通过将金属杂质引入到含金属的物质中来改变导电电极堆叠的功函数 材料层与导电电极一起存在于电极堆叠中。 金属杂质的选择取决于电极是否具有n型功函数或p型功函数。 本发明还提供一种制造这种半导体结构的方法。 金属杂质的引入可以通过共沉积含有金属的材料和改变金属杂质的功函数的层来形成，形成其中金属杂质层存在于含金属材料的层之间的叠层，或通过形成 包括在含金属材料上方和/或下面的金属杂质的材料层，然后加热该结构，使得金属杂质被引入到含金属的材料中。

公开(公告)号：US20080217747A1

公开(公告)日：2008-09-11

申请号：US12125508

申请日：2008-05-22

申请人： Michael P. Chudzik ,  Bruce B. Doris ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Yun Y. Wang ,  Keith Kwong Hon Wong

发明人： Michael P. Chudzik ,  Bruce B. Doris ,  Supratik Guha ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Yun Y. Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： H01L29/517 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal-oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.

摘要翻译： 提供半导体结构，例如场效应晶体管（FET）和/或金属氧化物半导体电容器（MOSCAP），其中通过将金属杂质引入到含金属的物质中来改变导电电极堆叠的功函数 材料层与导电电极一起存在于电极堆叠中。 金属杂质的选择取决于电极是否具有n型功函数或p型功函数。 本发明还提供一种制造这种半导体结构的方法。 金属杂质的引入可以通过共沉积含有金属的材料和改变金属杂质的功函数的层来形成，形成其中金属杂质层存在于含金属材料的层之间的叠层，或通过形成 包括在含金属材料上方和/或下面的金属杂质的材料层，然后加热该结构，使得金属杂质被引入到含金属的材料中。