COMPUTER MEMORY WITH DYNAMIC CELL DENSITY
    1.
    发明申请
    COMPUTER MEMORY WITH DYNAMIC CELL DENSITY 审中-公开
    具有动态细胞密度的计算机存储器

    公开(公告)号:US20110252215A1

    公开(公告)日:2011-10-13

    申请号:US12757738

    申请日:2010-04-09

    IPC分类号: G06F12/02

    摘要: A computer memory with dynamic cell density including a method that obtains a target size for a first memory region. The first memory region includes first memory units operating at a first density. The first memory units are includes in a memory in a memory system. The memory is operable at the first density and a second density. The method also includes: determining that a current size of the first memory region is not within a threshold of the target size and that the first memory region is smaller than the target size; identifying a second memory unit currently operating at the second density in a second memory region, the second memory unit included in the memory; and dynamically reassigning, during normal system operation, the second memory unit into the first memory region, the second memory unit operating at the first density after being reassigned to the first memory region.

    摘要翻译: 一种具有动态单元密度的计算机存储器,包括获得第一存储器区域的目标尺寸的方法。 第一存储器区域包括以第一密度操作的第一存储器单元。 第一存储器单元包括在存储器系统的存储器中。 存储器可在第一密度和第二密度下操作。 所述方法还包括:确定所述第一存储器区域的当前大小不在所述目标大小的阈值内,并且所述第一存储器区域小于所述目标大小; 识别当前在第二存储器区域以第二密度操作的第二存储器单元,所述第二存储器单元包括在存储器中; 以及在正常系统操作期间将所述第二存储器单元动态地重新分配到所述第一存储器区域中,所述第二存储器单元在被重新分配给所述第一存储器区域之后以所述第一密度操作。

    MEMORY CELL PRESETTING FOR IMPROVED MEMORY PERFORMANCE
    7.
    发明申请
    MEMORY CELL PRESETTING FOR IMPROVED MEMORY PERFORMANCE 有权
    用于改善记忆性能的存储单元预置

    公开(公告)号:US20130013860A1

    公开(公告)日:2013-01-10

    申请号:US13619451

    申请日:2012-09-14

    IPC分类号: G06F12/00 G06F12/08

    摘要: Memory cell presetting for improved performance including a method for using a computer system to identify a region in a memory. The region includes a plurality of memory cells characterized by a write performance characteristic that has a first expected value when a write operation changes a current state of the memory cells to a desired state of the memory cells and a second expected value when the write operation changes a specified state of the memory cells to the desired state of the memory cells. The second expected value is closer than the first expected value to a desired value of the write performance characteristic. The plurality of memory cells in the region are set to the specified state, and the data is written into the plurality of memory cells responsive to the setting.

    摘要翻译: 用于改进性能的存储单元预设,包括使用计算机系统识别存储器中的区域的方法。 该区域包括多个存储单元,其特征在于当写入操作将存储单元的当前状态改变到存储单元的期望状态时具有第一期望值的写入性能特性,以及当写入操作改变时第二预期值 存储器单元的指定状态到存储器单元的期望状态。 第二期望值比第一期望值更接近写入性能特性的期望值。 区域中的多个存储单元被设置为指定状态,并且响应于该设置将数据写入多个存储单元。