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    Acoustic wave device and filter using the same
    1.
    发明授权
    Acoustic wave device and filter using the same 有权
    声波装置和滤波器使用相同

    公开(公告)号：US07688161B2

    公开(公告)日：2010-03-30

    申请号：US11976441

    申请日：2007-10-24

    申请人： Michio Miura ,  Satoru Matsuda ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Seiichi Mitobe

    发明人： Michio Miura ,  Satoru Matsuda ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Seiichi Mitobe

    IPC分类号： H03H9/64 ,  H03H9/52 ,  H03H9/25

    CPC分类号： H03H9/6483

    摘要： An acoustic wave device includes a piezoelectric substrate, a resonator having comb electrodes that are provided above the piezoelectric substrate and excite an acoustic wave, and a capacitor that is provided above the piezoelectric substrate and is connected in series or parallel with the resonator, the capacitor including electrodes that horizontally face each other above the piezoelectric substrate. The electrodes of the capacitor are further from the piezoelectric substrate than the comb electrodes of the resonator.

    摘要翻译： 声波装置包括压电基板，具有设置在压电基板上方的梳状电极并激发声波的谐振器，以及设置在压电基板上方并与谐振器串联或并联连接的电容器，电容器 包括在压电基板上水平面对的电极。 与谐振器的梳状电极相比，电容器的电极比压电基片更远。

    Elastic boundary wave device, resonator, and filter
    2.
    发明授权
    Elastic boundary wave device, resonator, and filter 有权
    弹性边界波器件，谐振器和滤波器

    公开(公告)号：US07471171B2

    公开(公告)日：2008-12-30

    申请号：US11711893

    申请日：2007-02-28

    申请人： Michio Miura ,  Satoru Matsuda ,  Takashi Matsuda ,  Masanori Ueda ,  Seiichi Mitobe

    发明人： Michio Miura ,  Satoru Matsuda ,  Takashi Matsuda ,  Masanori Ueda ,  Seiichi Mitobe

    IPC分类号： H03H9/25 ,  H03H9/64

    CPC分类号： H03H9/0222 ,  H03H9/02559 ,  H03H9/14541 ,  H03H9/6483

    摘要： An elastic boundary wave device includes a LiNbO3 substrate, an electrode exciting an elastic wave and provided on the substrate, and a silicon oxide film provided on the substrate to cover the electrode, and parameters of the elastic boundary wave device have any one of ranges, where “θ” is a rotation Y cut angle of the substrate, “a” is a ratio of copper density with respect to a density of a material used as the electrode, “λ” is a wavelength of the elastic wave excited by the electrode, “h” is a film thickness of the electrode, “H” is a thickness of the silicon oxide film.

    摘要翻译： 弹性边界波装置包括LiNbO 3基板，激发弹性波并设置在基板上的电极和设置在基板上以覆盖电极的氧化硅膜，弹性边界波装置的参数具有范围， 其中“θ”是基板的旋转Y切割角，“a”是铜密度相对于用作电极的材料的密度的比率，“λ”是由电极激发的弹性波的波长 ，“h”是电极的膜厚，“H”是氧化硅膜的厚度。

    Acoustic wave device and filter using the same
    8.
    发明申请
    Acoustic wave device and filter using the same 有权
    声波装置和滤波器使用相同

    公开(公告)号：US20080129418A1

    公开(公告)日：2008-06-05

    申请号：US11976441

    申请日：2007-10-24

    申请人： Michio Miura ,  Satoru Matsuda ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Seiichi Mitobe

    发明人： Michio Miura ,  Satoru Matsuda ,  Shogo Inoue ,  Takashi Matsuda ,  Masanori Ueda ,  Seiichi Mitobe

    IPC分类号： H03H9/64 ,  H01L41/047

    CPC分类号： H03H9/6483

    摘要： An acoustic wave device includes a piezoelectric substrate, a resonator having comb electrodes that are provided above the piezoelectric substrate and excite an acoustic wave, and a capacitor that is provided above the piezoelectric substrate and is connected in series or parallel with the resonator, the capacitor including electrodes that horizontally face each other above the piezoelectric substrate. The electrodes of the capacitor are further from the piezoelectric substrate than the comb electrodes of the resonator.

    摘要翻译： 声波装置包括压电基板，具有设置在压电基板上方的梳状电极并激发声波的谐振器，以及设置在压电基板上方并与谐振器串联或并联连接的电容器，电容器 包括在压电基板上水平面对的电极。 与谐振器的梳状电极相比，电容器的电极比压电基片更远。