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公开(公告)号：US5733427A
公开(公告)日：1998-03-31
申请号：US413898
申请日：1995-03-30
申请人： Michio Satou , Takashi Yamanobe , Mitsuo Kawai , Tatsuzo Kawaguchi , Kazuhiko Mitsuhashi , Toshiaki Mizutani
发明人： Michio Satou , Takashi Yamanobe , Mitsuo Kawai , Tatsuzo Kawaguchi , Kazuhiko Mitsuhashi , Toshiaki Mizutani
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414
摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.
摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。
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公开(公告)号：US5447616A
公开(公告)日：1995-09-05
申请号：US166007
申请日：1993-12-14
申请人： Michio Satou , Takashi Yamanobe , Mitsuo Kawai , Tatsuzo Kawaguchi , Kazuhiko Mitsuhashi , Toshiaki Mizutani
发明人： Michio Satou , Takashi Yamanobe , Mitsuo Kawai , Tatsuzo Kawaguchi , Kazuhiko Mitsuhashi , Toshiaki Mizutani
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414
摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.
摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。
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公开(公告)号：US5294321A
公开(公告)日：1994-03-15
申请号：US974317
申请日：1993-11-10
申请人： Michio Satou , Takashi Yamanobe , Mitsuo Kawai , Tatsuzo Kawaguchi , Kazuhiko Mitsuhashi , Toshiaki Mizutani
发明人： Michio Satou , Takashi Yamanobe , Mitsuo Kawai , Tatsuzo Kawaguchi , Kazuhiko Mitsuhashi , Toshiaki Mizutani
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414
摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.
摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。
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